NXP Semiconductors PH4025L,115

Overview

PH4025L,115 from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 25 V V_DS, 99 A continuous drain current at T_mb = 25 °C, and 3.4 mΩ typical R_DS(on) at V_GS = 10 V - optimized for high-efficiency DC-to-DC converters and voltage regulators in PC motherboards.

For engineers reviewing the PH4025L,115 datasheet, PH4025L,115 pinout, PH4025L,115 application, or PH4025L,115 equivalent, key selection criteria include low gate threshold (1.3–2.15 V), 5 nC gate-drain charge, 2 K/W junction-to-mounting-base thermal resistance, ruggedness-tested construction, and lead-free LFPAK packaging for high-power density board designs.

Technical Context

This device uses TrenchMOS technology to achieve low conduction loss and fast switching: R_DS(on) remains ≤6.4 mΩ up to 150 °C, and Q_GD = 5 nC enables efficient hard-switching in synchronous buck topologies. Its logic-level gate drive (V_GS(th) max 2.15 V at 25 °C) allows direct interfacing with 3.3 V or 5 V controllers without level-shifting.

The mounting base (pin mb) is internally connected to the drain, providing low-inductance thermal and electrical path to PCB copper. Thermal resistance R_th(j-mb) = 2 K/W supports high-power operation when mounted on ≥100 mm² 2-oz copper, and avalanche energy rating E_DS(AL)S = 150 mJ ensures robustness under unclamped inductive transients.

Key Specifications

Pinout & Package

Package: LFPAK (SOT669) - plastic single-ended surface-mounted package with exposed mounting base for enhanced thermal and electrical performance. Dimensions: 5.0 × 3.3 × 1.3 mm (L × W × H); mounting base electrically tied to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with PSMN2R0-25YL,115 and IPB180N03L G, the PH4025L,115 delivers balanced performance: its 3.4 mΩ R_DS(on) and 5 nC Q_GD optimize efficiency in 12 V-input, sub-1 MHz DC-DC converters, while 100 % ruggedness testing and SOT669 footprint ensure reliability and manufacturability in high-volume motherboard production.

Availability

PH4025L,115 is available at Aetrix Electronics and suitable for PC motherboard VRMs, server point-of-load converters, and industrial DC-DC modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for PH4025L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.

The PH4025L,115 belongs to Nexperia's TrenchMOS logic-level power MOSFET family, engineered for high-efficiency, high-current switching in space-constrained computing and industrial power supplies.

FAQ

What is the maximum continuous drain current for PH4025L,115 at 100 °C mounting base temperature?

The PH4025L,115 supports 67.5 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the LFPAK package and ensures safe operation in high-ambient environments like enclosed server chassis or industrial enclosures where PCB copper area may be constrained.

Does PH4025L,115 require a gate resistor for stable switching in a 500 kHz buck converter?

Yes - while the PH4025L,115 has low intrinsic gate resistance (0.48 Ω typ), a series gate resistor (typically 2.2–10 Ω) is recommended to damp ringing, control dV/dt, and prevent shoot-through in synchronous configurations. The 5 nC Q_GD and 21.3 nC total gate charge make it compatible with standard 1–2 A peak gate drivers at 500 kHz without excessive power loss.

Is PH4025L,115 qualified for automotive applications per AEC-Q101?

No - the PH4025L,115 is not AEC-Q101 qualified. It is designed for computing and industrial applications. For automotive body control units, Nexperia offers AEC-Q101-qualified variants such as the PSMN2R0-25YL,115, which shares the same TrenchMOS process and LFPAK56 package but undergoes additional stress testing.

How does the mounting base (mb) connection affect PCB layout for PH4025L,115?

The mounting base of the PH4025L,115 is internally connected to the drain, so the PCB thermal pad must be routed to the drain net - not ground or source. A minimum 100 mm² 2-oz copper area with multiple thermal vias to inner layers is required to achieve the rated 2 K/W R_th(j-mb) and sustain 46.4 W power dissipation without exceeding T_j = 150 °C.

What is the typical reverse recovery time (t_rr) of the body diode in PH4025L,115?

The PH4025L,115 body diode has a typical reverse recovery time t_rr of 38 ns under conditions of I_S = 25 A, dI_S/dt = −100 A/µs, V_R = 20 V, and V_GS = 0 V (Table 5). This fast recovery supports efficient synchronous rectification and reduces switching loss compared to standard MOSFETs with slower body diodes.