NXP Semiconductors PH4830L,115

Overview

PH4830L,115 from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, designed for high-efficiency DC-DC converters and voltage regulators. It delivers R_DS(on) ≤ 4.8 mΩ at V_GS = 10 V and I_D = 25 A, supports 30 V V_DS, 84 A continuous drain current at T_mb = 25 °C, and features 100 % ruggedness and RG testing.

For engineers reviewing the PH4830L,115 datasheet, PH4830L,115 pinout, PH4830L,115 application, or PH4830L,115 equivalent, key selection criteria include low conduction loss in synchronous buck stages, thermal performance via mounting base (R_th(j-mb) = 2 K/W), gate charge profile (Q_GD = 5.4 nC), and logic-level drive compatibility (V_GS(th) typ. 1.7 V).

Technical Context

This device employs TrenchMOS technology to achieve optimized switching and conduction losses in high-current, low-voltage power conversion topologies. Its gate threshold voltage (1.3–2.15 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The LFPAK package integrates a thermally enhanced mounting base electrically connected to the drain, enabling efficient heat transfer to PCB copper while supporting high pulsed currents (I_DM = 240 A) and avalanche energy (E_DS(AL)S = 121 mJ).

Key Specifications

Pinout & Package

PH4830L,115 uses the SOT669 (LFPAK) plastic surface-mount package with 4 leads and an exposed mounting base electrically tied to the drain terminal. The package provides superior thermal performance versus SO-8 or DPAK, with optimized footprint for high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with PSMN1R0-30YL,115, PH4830L,115 trades 1.0 mΩ R_DS(on) for smaller footprint and lower Q_G, making it more suitable for space-constrained multi-phase designs; versus IPB110N15N3 G, PH4830L,115 delivers 2.3× lower R_DS(on) and 3× better thermal resistance in 30 V applications, directly improving power density and efficiency.

Availability

PH4830L,115 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and PC motherboard voltage regulators requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PH4830L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PH4830L,115 belongs to Nexperia's logic-level TrenchMOS portfolio, engineered specifically for high-efficiency, high-current DC-DC conversion in space- and thermally constrained applications.

FAQ

What is the maximum continuous drain current for PH4830L,115 at 100 °C mounting base temperature?

The PH4830L,115 supports 63 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the LFPAK package and ensures safe operation in high-ambient environments such as enclosed server chassis or industrial enclosures where airflow is restricted. Designers must verify PCB copper area and thermal vias to maintain T_mb ≤ 100 °C under full load.

Does PH4830L,115 require a gate driver IC when used with a 3.3 V microcontroller PWM output?

Yes, PH4830L,115 can be driven directly by a 3.3 V microcontroller PWM output due to its logic-level gate threshold (V_GS(th) typ. 1.7 V, max 2.15 V). However, for reliable switching at >200 kHz, a dedicated gate driver is recommended to overcome gate capacitance (C_iss = 2786 pF) and minimize rise/fall times (t_r = 43 ns, t_f = 19 ns). The PH4830L,115's low R_G (0.51 Ω) supports fast edge rates even with modest drive strength.

How is the mounting base of PH4830L,115 electrically connected, and what design considerations apply?

The mounting base of PH4830L,115 is internally connected to the drain (D) terminal, as confirmed in the pinning diagram and package outline. It must be soldered to a large, low-impedance copper pour on the PCB to serve as both primary thermal path and high-current drain return. Designers should avoid isolating the base with solder mask and ensure ≥6 thermal vias (0.3 mm diameter) beneath the pad to transfer heat to inner layers or heatsink planes. This configuration achieves the specified R_th(j-mb) = 2 K/W.

What is the avalanche energy rating of PH4830L,115, and under what conditions is it guaranteed?

The PH4830L,115 is rated for 121 mJ non-repetitive drain-source avalanche energy (E_DS(AL)S) under unclamped inductive load conditions: I_D = 49 A, t_p = 0.12 ms, V_DS ≤ 25 V, R_GS = 50 Ω, V_GS = 10 V, starting at T_j = 25 °C. This value is 100 % tested per unit, confirming ruggedness for transient overvoltage events in DC-DC converters without external snubbers.

Can PH4830L,115 replace older NXP PH4830 in existing designs?

Yes, PH4830L,115 is the direct successor to the legacy NXP PH4830 and maintains identical electrical specifications, pinout, package (SOT669), and thermal characteristics. As Nexperia assumed the Standard Products business in 2017, PH4830L,115 carries updated branding and documentation but is functionally and mechanically interchangeable with PH4830 in all applications, including DC-DC converters and voltage regulators.