Nexperia USA Inc. PH4840S,115

Overview

PH4840S,115 from NXP Semiconductors is an N-channel enhancement-mode TrenchMOS power MOSFET in LFPAK (SOT669) package, designed for high-current switching in DC-DC converters and SMPS. It delivers 94.5 A continuous drain current at T_mb = 25 °C, 4.1 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 40 V V_DS rating, and 62.5 W total power dissipation with 2 K/W junction-to-mounting-base thermal resistance.

For engineers reviewing the PH4840S,115 datasheet, PH4840S,115 pinout, PH4840S,115 application, or PH4840S,115 equivalent, this device is selected for high-efficiency, thermally constrained power stages where low conduction loss, fast switching, and robust avalanche energy handling (250 mJ) are critical - especially in notebook power delivery and motor drive half-bridges.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) and optimized gate charge (Q_G(tot) = 67 nC, Q_GD = 16 nC) for efficient hard-switching operation. Its SO8-equivalent footprint enables drop-in PCB layout compatibility while delivering superior thermal performance via the exposed mounting base connected to drain.

The device features a 1–3 V gate threshold voltage (V_GS(th)) with tight distribution across temperature (0.5–2.2 V), supports 7 V and 10 V gate drive, and integrates a robust body diode with 46 ns reverse recovery time and 0.85–1.2 V forward voltage at 25 A - enabling synchronous rectification and freewheeling in buck and H-bridge topologies.

Key Specifications

Pinout & Package

PH4840S,115 uses the SOT669 (LFPAK) plastic surface-mount package with 4 leads and an exposed metal mounting base thermally and electrically connected to the drain. The package offers SO8-equivalent PCB footprint while delivering significantly lower thermal resistance and higher current density.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7470PBF and PSMN2R0-30YL, PH4840S,115 uniquely balances 40 V rating, 4.1 mΩ on-resistance, and 2 K/W thermal resistance in a manufacturable LFPAK package - making it optimal for thermally dense 24 V industrial and portable computing power stages where both voltage headroom and thermal performance are non-negotiable.

Availability

PH4840S,115 is available at Aetrix Electronics and suitable for laptop VRMs, automotive DC-DC converters, and industrial BLDC motor drives requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for PH4840S,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

PH4840S,115 belongs to NXP's TrenchMOS power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space- and thermally-constrained power conversion systems - emphasizing low R_DS(on), fast switching, and ruggedness in automotive and computing environments.

FAQ

What is the maximum continuous drain current for PH4840S,115 at 100 °C mounting base temperature?

The maximum continuous drain current is 59.5 A at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints at elevated ambient or heatsink temperatures and must be applied in thermal design calculations for sustained operation.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base (mb) is internally connected to the drain (D) terminal, as confirmed in the pinning diagram and package description. It must be treated as a live high-voltage node and electrically isolated from all other circuit potentials unless the system design intentionally references the heatsink to drain potential.

Can PH4840S,115 be driven directly by a 3.3 V microcontroller GPIO?

No - its gate threshold voltage ranges from 0.5 V to 3 V, but full enhancement requires ≥7 V (typical R_DS(on) = 3.85 mΩ at V_GS = 7 V). A 3.3 V drive yields high R_DS(on) and excessive conduction loss; a dedicated gate driver or level shifter is required for reliable switching.

Does PH4840S,115 have built-in ESD protection on the gate?

Yes - the datasheet specifies a gate leakage current (I_GSS) of ≤100 nA at ±20 V, indicating integrated gate oxide protection. However, it is not rated to JEDEC JS-001 Class 2 or higher; external gate resistors and TVS clamping are recommended in high-noise environments like motor drives.