NXP Semiconductors PH5525L,115

Overview

PH5525L,115 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, designed for high-efficiency DC-to-DC converters and voltage regulators. It delivers R_DS(on) ≤ 5.5 mΩ at V_GS = 10 V, supports continuous drain current up to 81.7 A at T_mb = 25 °C, and features gate threshold voltage of 1.3–2.15 V for direct microcontroller drive.

For engineers reviewing the PH5525L,115 datasheet, PH5525L,115 pinout, PH5525L,115 application, or PH5525L,115 equivalent, key selection criteria include low conduction loss under 4.5 V gate drive, avalanche energy rating of 100 mJ, thermal resistance R_th(j-mb) = 2 K/W, and 100% R_G tested gate integrity for reliable switching in high-current power stages.

Technical Context

This device uses TrenchMOS technology to achieve optimized charge balance between Q_GD = 3.3 nC and Q_G(tot) = 16.6 nC, enabling fast switching with t_d(on) = 25 ns and t_f = 17 ns under 5.6 Ω gate resistance. Its source-drain diode exhibits V_SD = 0.83–1.2 V at I_S = 25 A and t_rr = 33.2 ns, supporting synchronous rectification.

The mounting base (pin mb) is internally connected to drain (D), forming a low-inductance, thermally efficient power path. Thermal performance is defined by junction-to-mounting-base resistance (R_th(j-mb)) of 2 K/W, allowing direct heatsinking without isolation, and rated for T_j up to +150 °C with stable V_GS(th) down to 0.8 V at that temperature.

Key Specifications

Pinout & Package

PH5525L,115 is housed in a plastic single-ended surface-mounted LFPAK package (SOT669), featuring an exposed mounting base for low thermal resistance and high-current routing. The package measures 5.0 × 3.3 mm with 0.65 mm pitch and 1.3 mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PbF and SiR872DP, PH5525L,115 provides superior thermal performance via its low-R_th(j-mb) mounting base and higher current rating in a smaller LFPAK footprint-enabling higher power density and eliminating thermal interface layers in board-level designs.

Availability

PH5525L,115 is available at Aetrix Electronics and suitable for high-current DC-to-DC converters, server voltage regulator modules, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PH5525L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

PH5525L,115 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained DC-DC conversion and voltage regulation systems.

FAQ

What is the maximum continuous drain current rating for PH5525L,115?

The PH5525L,115 is rated for 81.7 A continuous drain current at mounting base temperature (T_mb) of 25 °C and V_GS = 10 V. At T_mb = 100 °C, the rating drops to 51.7 A. This specification reflects actual thermal performance at the mounting base-not ambient-so PCB copper area and heatsinking directly determine real-world current capability. The PH5525L,115 datasheet defines derating curves in Figure 2.

Does PH5525L,115 support 3.3 V logic-level gate drive?

Yes, PH5525L,115 supports 3.3 V logic-level gate drive due to its low gate threshold voltage range of 1.3–2.15 V at T_j = 25 °C. At V_GS = 4.5 V, R_DS(on) remains ≤8.2 mΩ, enabling usable conduction performance even with 3.3 V microcontroller outputs. The PH5525L,115 maintains functional enhancement down to 0.8 V V_GS(th) at 150 °C, ensuring robust operation across temperature extremes.

How is thermal management implemented for PH5525L,115?

Thermal management for PH5525L,115 relies on its exposed mounting base (pin mb), which is internally connected to the drain and serves as the primary thermal and current path. With R_th(j-mb) = 2 K/W, optimal cooling requires soldering the mounting base to ≥200 mm² of 2 oz copper on the PCB. No thermal interface material is needed, and the PH5525L,115 does not require electrical isolation from the heatsink since the drain is referenced to the mounting plane.

What is the avalanche energy rating of PH5525L,115?

The PH5525L,115 has a non-repetitive drain-source avalanche energy rating (E_DS(AL)S) of 100 mJ under specified test conditions: unclamped inductive load, I_D = 45 A, pulse width t_p = 0.1 ms, V_DS ≤25 V, R_GS = 50 Ω, V_GS = 10 V, and starting junction temperature of 25 °C. This rating applies only to single-event, non-repetitive stress and is documented in Table 3 of the PH5525L,115 datasheet.

Is PH5525L,115 lead-free and RoHS compliant?

Yes, PH5525L,115 is lead-free and RoHS compliant per Directive 2011/65/EU. Its SOT669 (LFPAK) package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life at ≤30 °C/60% RH without dry-pack requirements. The PH5525L,115 manufacturing process and finish are fully documented in NXP's official compliance statements.