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NXP Semiconductors PH6030L,115
- Part No.:
- PH6030L,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PH6030L,115.pdf
- Description:
- MOSFET N-CH 30V 76.7A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:5,168
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Product details
Overview
PH6030L,115 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V VDS, 76.7 A continuous drain current at Tmb = 25 °C, and 4.7 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters and voltage regulators.
For engineers reviewing the PH6030L,115 datasheet, PH6030L,115 pinout, PH6030L,115 application, or PH6030L,115 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low 2 K/W junction-to-mounting-base thermal resistance, 3.1 nC QGD, and optimized switching losses for high-frequency power stages.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) and fast switching with minimal gate charge. Its gate threshold voltage ranges from 0.8 V (Tj = 150 °C) to 2.15 V (Tj = 25 °C), enabling reliable turn-on with standard 3.3 V or 5 V logic drivers.
The integrated source-drain diode exhibits 0.85 V forward voltage at 25 A and 25 °C, with 34 ns reverse recovery time and 11.5 nC recovered charge - supporting efficient synchronous rectification without external Schottky diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V input rails with margin for transient spikes in industrial and notebook power supplies |
| RDS(on) | 4.7 mΩ typical at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 25 A, critical for high-current POL converters |
| QGD | 3.1 nC - low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency |
| Tj max | 150 °C - allows operation in thermally constrained environments like ultra-thin notebooks and sealed power modules |
| Rth(j-mb) | 2 K/W - enables direct thermal coupling to PCB copper or heatsink via mounting base, simplifying thermal design |
| VGS(th) | 1.3–2.15 V typical at 25 °C - ensures robust turn-on with 3.3 V microcontroller GPIOs without level-shifting |
| ID (continuous) | 76.7 A at Tmb = 25 °C - supports high-current single-phase buck stages up to ~100 W with appropriate layout |
Pinout & Package
PH6030L,115 is housed in the LFPAK (SOT669) package - a 4-lead plastic surface-mount outline with exposed mounting base electrically connected to the drain. The package features low thermal resistance (2 K/W) and high current capability via solderable copper base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source pins reduce bond-wire inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single gate terminal with 1.75 Ω internal gate resistance - limits peak gate current and dV/dt-induced shoot-through risk |
| Mounting base (mb) | Drain (D) | Exposed copper pad tied directly to drain - provides primary thermal path and high-current drain connection without wire bonds |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to 4.5 V VGS, eliminating need for gate driver ICs in 5 V or 3.3 V control systems |
| TrenchMOS architecture | Delivers 4.7 mΩ RDS(on) with 15.2 nC total gate charge - balances conduction and switching loss trade-offs |
| Optimized for DC-DC converters | Low QGD/QG ratio (3.1/15.2 ≈ 20%) reduces Miller plateau duration and improves controllability in synchronous buck topologies |
| Lead-free LFPAK package | SOT669 outline offers 2× lower thermal resistance than SO-8 and 3× higher current rating than DPAK at same footprint |
| Avalanche ruggedness | 95 mJ non-repetitive EAS - withstands inductive energy during overcurrent events without failure in unclamped conditions |
Applications
| DC-DC Converters | Notebook Computers |
|---|---|
|
Use Scenario: High-efficiency 12 V to 1.2 V synchronous buck converter delivering up to 60 A to CPU core. IC Role / Device Role / Timing Role: Main high-side switch handling full load current with fast switching and low conduction loss. Use Value: 4.7 mΩ RDS(on) and 3.1 nC QGD reduce combined conduction + switching losses by >15% versus comparable SO-8 MOSFETs. |
Use Scenario: Compact 19 V input battery charger with dual-phase buck-boost architecture for USB-C PD compliance. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck-boost stage, operating at 500 kHz with 3.3 V gate drive. Use Value: Logic-level VGS(th) (1.7 V typ.) ensures full enhancement using system PMIC's 3.3 V LDO output, avoiding gate driver overhead. |
| Switched-Mode Power Supplies | Voltage Regulators |
|
Use Scenario: 24 V input, 5 V/20 A isolated flyback secondary-side synchronous rectifier in industrial SMPS. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency and reduce thermal stress. Use Value: Integrated source-drain diode with 34 ns trr and 11.5 nC Qr enables clean zero-voltage switching transitions without external snubbing. |
Use Scenario: Point-of-load (POL) regulator on FPGA or ASIC board requiring <1% output ripple and rapid load transient response. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch in monolithic or discrete buck controller solution. Use Value: 2 K/W Rth(j-mb) allows direct thermal coupling to 2 oz copper plane, maintaining Tj < 100 °C at full 76.7 A derated load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | SO-8 package; 3.3 mΩ RDS(on) at VGS = 10 V but higher 3.5 K/W Rth(j-c); no mounting base drain connection | Lower RDS(on) but limited to ~40 A continuous due to thermal bottleneck; unsuitable for >500 kHz switching without forced air | Select when board space permits SO-8 and thermal budget allows higher junction temperature rise |
| DMN3025LSD-13 | PowerDI5060 package; 2.5 mΩ RDS(on) at VGS = 10 V; 3.2 nC QGD; lead-free, RoHS-compliant | Higher current density but lacks avalanche rating (no EAS spec); not qualified for unclamped inductive loads | Select for cost-sensitive, non-avalanche-critical applications where 2.5 mΩ conduction loss outweighs ruggedness requirements |
Compared with IRL3803PbF and DMN3025LSD-13, PH6030L,115 delivers superior thermal performance (2 K/W vs ≥3.2 K/W), verified avalanche energy (95 mJ), and optimized QGD/RDS(on) balance - making it preferred for high-reliability, high-frequency DC-DC designs where thermal management and transient robustness are critical.
Availability
PH6030L,115 is available at Aetrix Electronics and suitable for DC-DC converters, notebook computers, and switched-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PH6030L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The PH6030L,115 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in space-constrained and thermally demanding applications.
FAQ
What is the maximum continuous drain current for PH6030L,115 at 100 °C mounting base temperature?
The PH6030L,115 supports 48.5 A continuous drain current at Tmb = 100 °C and VGS = 10 V, as specified in Table 4 (Limiting values). This derating reflects thermal constraints of the LFPAK package under sustained high-temperature operation, and must be validated against actual PCB copper area and airflow in the final design.
Does PH6030L,115 have avalanche capability, and what is its rated energy?
Yes, PH6030L,115 is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 95 mJ under defined test conditions: VGS = 10 V, Tj(init) = 25 °C, ID = 31 A, Vsup ≤30 V, tp = 0.14 ms, RGS = 50 Ω, unclamped inductive load. This specification confirms ruggedness for inductive switching transients in real-world power circuits.
What is the gate-source threshold voltage range for PH6030L,115 across temperature?
The PH6030L,115 gate-source threshold voltage (VGS(th)) ranges from 0.8 V (minimum at Tj = 150 °C) to 2.15 V (maximum at Tj = 25 °C), with a typical value of 1.7 V at 25 °C. This negative temperature coefficient ensures stable turn-on behavior across operating junction temperatures.
Can PH6030L,115 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?
Yes, PH6030L,115 is a logic-level MOSFET with VGS(th) max of 2.15 V at 25 °C and RDS(on) = 7.3 mΩ at VGS = 4.5 V, enabling full enhancement from 3.3 V logic. However, for optimal switching speed and reduced Miller-induced shoot-through risk, a low-impedance 3.3 V source (e.g., dedicated GPIO buffer) is recommended over high-impedance MCU pins.
What is the thermal resistance from junction to mounting base for PH6030L,115?
The PH6030L,115 has a thermal resistance from junction to mounting base (Rth(j-mb)) of 2 K/W, as stated in Table 5. This value assumes proper soldering of the exposed mounting base to a minimum 100 mm² copper area on the PCB, and is critical for calculating junction temperature rise under load.
PH6030L,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 76.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.2 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2260 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PH6030L,115 FAQ
1.How can I place an order for PH6030L,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PH6030L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PH6030L,115 reliable?
The price and inventory of PH6030L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH6030L,115 is usually 5 days.
3.What payment methods are accepted for PH6030L,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH6030L,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PH6030L,115?
PH6030L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PH6030L,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PH6030L,115?
For technical support, including PH6030L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH6030L,115 requirements.
6.How does Aetrix verify that PH6030L,115 is sourced from the original manufacturer or authorized distributors?
All PH6030L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH6030L,115 meets industry standards.
7.What is the process for return or replacement of PH6030L,115?
All PH6030L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH6030L,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PH6030L,115 part is unused and in its original packaging.
Return procedure for PH6030L,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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