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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PH6325L,115

Name: PH6325L,115
Brand: Nexperia USA Inc.
SKU: PH6325L,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PH6325L,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PH6325L,115.pdf

Description:: MOSFET N-CH 25V 78.7A LFPAK56

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Product details

Overview

PH6325L,115 from NXP Semiconductors is a logic-level N-channel enhancement-mode MOSFET using TrenchMOS™ technology in LFPAK (SOT669) package, rated for 25 V V_DS, 6.3 mΩ R_DS(on) at V_GS = 10 V and 25 A, with 2 K/W junction-to-mounting-base thermal resistance. It serves as a high-efficiency synchronous rectifier or main switch in compact DC-DC converters for notebook computers.

For engineers reviewing the PH6325L,115 datasheet, PH6325L,115 pinout, PH6325L,115 application, or PH6325L,115 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low 7.4 mΩ R_DS(on) at 4.5 V/25 A, 13.3 nC total gate charge, 25 °C to 150 °C operating junction range, and LFPAK thermal performance optimized for high-density power stages.

Technical Context

This MOSFET employs TrenchMOS™ process architecture to achieve low R_DS(on) and fast switching with minimal gate charge. Its threshold voltage ranges from 0.5 V (T_j = 150 °C) to 2.2 V (T_j = −55 °C), enabling reliable turn-on with standard 3.3 V or 5 V logic drivers.

The device integrates a robust intrinsic body diode with 33 ns reverse recovery time and 13 nC recovered charge, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design leverages the exposed mounting base (connected to drain) for direct PCB copper thermal coupling, achieving 2 K/W R_th(j-mb).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input DC-DC stages with margin
R_DS(on) @ 4.5 V	7.4 mΩ typ - Enables <100 mW conduction loss at 25 A in 5 V gate-drive systems
R_DS(on) @ 10 V	4.7 mΩ typ - Supports ultra-low loss operation when driven from 10 V gate supply
Q_G(tot)	13.3 nC - Low gate charge enables efficient 1–2 MHz switching with modest driver strength
R_th(j-mb)	2 K/W - Mounting base thermal path delivers >60 W power dissipation capability with 25 °C ambient
V_GS(th)	1.0–2.2 V - Guaranteed turn-on with 3.3 V logic; stable over −55 °C to 150 °C
Q_GD	3.3 nC - Minimizes Miller-induced switching delay and shoot-through risk in hard-switched converters

Pinout & Package

PH6325L,115 uses the SOT669 (LFPAK; Power-SO8) plastic surface-mount package with an exposed metal mounting base electrically connected to the drain terminal. The package provides low thermal resistance and high current capability via three parallel source leads and one gate lead.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source connections reduce conduction loss and improve current sharing in high-frequency layouts
4	Gate (G)	Single gate input with 1.8 Ω internal resistance; compatible with standard logic-level drivers without external gate resistor optimization
Mounting Base (mb)	Drain (D)	Exposed copper pad tied internally to drain; must be soldered to large PCB copper pour for thermal management and EMI control

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at V_GS = 4.5 V, eliminating need for gate boosters in 3.3 V/5 V controller designs
TrenchMOS™ technology	Delivers 6.3 mΩ R_DS(on) at 10 V while maintaining rugged 25 V rating and low Q_G
Low R_th(j-mb)	2 K/W thermal resistance enables >60 W continuous power handling with minimal heatsinking
Optimized for DC-DC converters	Fast 25 ns t_r/12 ns t_f, low 179 pF Crss, and 33 ns t_rr support high-frequency synchronous rectification
Robust avalanche rating	115 mJ non-repetitive E_DS(AL)S supports safe operation during transient overvoltage events in buck converters

Applications

Laptop Voltage Regulator Module (VRM)

USB-C PD Buck Converter

Use Scenario: High-current CPU core supply delivering up to 70 A at 0.8–1.2 V from 12 V rail.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter, operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 7.4 mΩ R_DS(on) at 4.5 V reduces conduction loss by >30% vs. legacy 10 mΩ logic-FETs, improving VRM efficiency at light-to-moderate loads.

Use Scenario: 20 V to 5 V/3 A USB-C Power Delivery step-down converter in portable chargers.

IC Role / Device Role / Timing Role: Main high-side switch in monolithic or discrete buck regulator, driven directly by 3.3 V PWM controller.

Use Value: 13.3 nC Q_G(tot) and 3.3 nC Q_GD enable clean 1 MHz switching with minimal gate driver power and reduced EMI generation.

Industrial 24 V Input DC-DC Converter

LED Driver Constant-Current Switch

Use Scenario: 24 V to 5 V/10 A isolated or non-isolated converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or synchronous buck topology, operating at 250–500 kHz.

Use Value: 2 K/W R_th(j-mb) allows full 78.7 A I_D rating at T_mb = 25 °C, simplifying thermal design in enclosed industrial enclosures.

Use Scenario: High-brightness LED string driver with analog/digital dimming in architectural lighting.

IC Role / Device Role / Timing Role: PWM-controlled current-path switch in constant-current buck stage, cycling at 1–10 kHz.

Use Value: Body diode t_rr = 33 ns and Q_r = 13 nC minimize switching losses and voltage overshoot during freewheeling, reducing LED current ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN1R0-25YLH	25 V, 1.0 mΩ R_DS(on) @ 10 V, 17.5 nC Q_G(tot), same LFPAK56 package	Higher conduction efficiency but higher gate drive demand; less suitable for 3.3 V logic drive	Prefer when 10 V gate drive is available and lowest possible R_DS(on) is critical
IPB110N20N3 G	20 V, 1.1 mΩ R_DS(on) @ 10 V, 23 nC Q_G(tot), TO-263 package	Lower voltage rating and larger footprint; higher thermal resistance (3.5 K/W)	Consider only if board layout permits TO-263 and system V_IN ≤ 16 V

Compared with PSMN1R0-25YLH and IPB110N20N3 G, PH6325L,115 uniquely balances 4.5 V logic compatibility, 7.4 mΩ R_DS(on) at low gate voltage, and 2 K/W thermal resistance in a compact LFPAK, making it optimal for space-constrained 12–24 V input DC-DC stages where gate drive voltage and thermal density are jointly constrained.

Availability

PH6325L,115 is available at Aetrix Electronics and suitable for laptop VRMs, USB-C PD converters, and industrial 24 V DC-DC supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PH6325L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

PH6325L,115 belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in portable and embedded power systems.

FAQ

Is PH6325L,115 suitable for 3.3 V gate drive?

Yes. PH6325L,115 has a guaranteed V_GS(th) of 1.0–2.2 V at 25 °C and maintains 7.4 mΩ R_DS(on) at V_GS = 4.5 V and 25 A, enabling full enhancement with 3.3 V logic outputs when used with appropriate gate driver rise time and layout. Its low threshold ensures reliable turn-on even at elevated temperatures.

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C and V_GS = 10 V, the maximum continuous drain current is 49.6 A per the limiting values table. This derating reflects thermal constraints-not electrical limits-and assumes proper PCB copper area for the mounting base to maintain T_j ≤ 150 °C.

Does PH6325L,115 have an integrated Schottky diode?

No. PH6325L,115 uses a standard silicon body diode inherent to the MOSFET structure. Its source-drain diode has V_SD = 0.85–1.2 V at 25 A and T_j = 25 °C, with 33 ns reverse recovery time and 13 nC recovered charge-typical of optimized trench MOSFETs, not a separate Schottky component.

Can PH6325L,115 be used in avalanche mode?

Yes, but only in non-repetitive conditions. Its datasheet specifies 115 mJ non-repetitive avalanche energy (E_DS(AL)S) under defined test conditions (V_DD = 25 V, I_D = 34 A, t_p = 0.15 ms). Repetitive avalanche is not characterized and must be avoided in normal operation per NXP's application guidance.

PH6325L,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 78.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 13.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1871 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PH6325L,115 FAQ

1.How can I place an order for PH6325L,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH6325L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH6325L,115 reliable?

The price and inventory of PH6325L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH6325L,115 is usually 5 days.

3.What payment methods are accepted for PH6325L,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH6325L,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH6325L,115?

PH6325L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH6325L,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH6325L,115?

For technical support, including PH6325L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH6325L,115 requirements.

6.How does Aetrix verify that PH6325L,115 is sourced from the original manufacturer or authorized distributors?

All PH6325L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH6325L,115 meets industry standards.

7.What is the process for return or replacement of PH6325L,115?

All PH6325L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH6325L,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH6325L,115 part is unused and in its original packaging.

Return procedure for PH6325L,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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