NXP Semiconductors PH7030L,115
- Part No.:
- PH7030L,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PH7030L,115.pdf
- Description:
- MOSFET N-CH 30V 68A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:6,732
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Product details
Overview
PH7030L,115 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, rated for 30 V VDS, 68 A continuous drain current at Tmb = 25 °C, and 6.9 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency power switch in DC-DC converters and notebook CPU/GPU VRMs.
For engineers reviewing the PH7030L,115 datasheet, PH7030L,115 pinout, PH7030L,115 application, or PH7030L,115 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low thermal resistance (Rth(j-mb) = 2 K/W), avalanche ruggedness (115 mJ), and SOT669 mounting-base thermal path for high-power density designs.
Technical Context
This device uses NXP's TrenchMOS technology to achieve low RDS(on) and fast switching with QG(tot) = 12 nC and tr/tf = 38/21 ns. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V at 25 °C, enabling direct drive from 3.3 V or 5 V controllers without level-shifting.
The SOT669 package integrates a thermally enhanced mounting base connected to the drain, supporting high-current operation with minimal PCB copper area. The source-drain diode exhibits VSD = 0.81 V at 10 A and trr = 11 ns, suitable for synchronous rectification and freewheeling in SMPS topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and 12 V intermediate bus systems. |
| RDS(on) @ VGS = 10 V | 6.9 mΩ (typ) - Enables <1 W conduction loss at 40 A, critical for high-efficiency VRM stages. |
| RDS(on) @ VGS = 4.5 V | 9.6 mΩ (typ) - Ensures robust on-state performance with standard 3.3 V logic-level drivers. |
| Ptot | 62.5 W @ Tmb = 25 °C - High power handling enabled by low Rth(j-mb) = 2 K/W to mounting base. |
| QG(tot) | 12 nC - Low gate charge supports efficient 500 kHz–1 MHz switching in compact DC-DC converters. |
| EAS | 115 mJ - Unclamped avalanche energy rating enables reliable operation under inductive load transients. |
| VGS(th) | 1.0–2.0 V @ Tj = 25 °C - Guaranteed turn-on with 3.3 V microcontrollers or PWM ICs without gate boosting. |
Pinout & Package
PH7030L,115 uses the LFPAK (SOT669) package - a plastic single-ended surface-mount outline with an exposed metal mounting base thermally and electrically connected to the drain. The package provides superior thermal performance over SO-8 and DPAK, with optimized layout for high-current PCB traces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching. |
| 4 (G) | Gate | Single gate terminal with low-inductance layout; designed for direct connection to gate drivers with minimal loop area. |
| Mounting Base (mb) | Drain | Exposed copper pad electrically tied to drain and thermally coupled to heatsink or PCB copper pour for efficient heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.0 V ensures full enhancement with 3.3 V control signals, eliminating need for gate driver boost stages. |
| TrenchMOS architecture | Enables 6.9 mΩ RDS(on) in SOT669, delivering >95% efficiency in 12 V → 1.2 V VRMs at 40 A. |
| Low Rth(j-mb) | 2 K/W thermal resistance allows 62.5 W dissipation with only 125 °C junction-to-base delta, simplifying thermal design. |
| Avalanche-rated | 115 mJ EAS supports robust operation during load dump or short-circuit events without external snubbers. |
| Fast body diode | trr = 11 ns and VSD = 0.81 V enable use as synchronous rectifier or freewheeling diode in high-frequency buck converters. |
Applications
| DC-DC Converters | Notebook Computers |
|---|---|
Use Scenario: Point-of-load (POL) buck converter stepping 12 V down to 1.2 V for CPU core supply. IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 500 kHz–1 MHz with precise duty-cycle control. Use Value: 6.9 mΩ RDS(on) minimizes I²R losses, while 12 nC QG enables clean, low-loss transitions and reduced gate drive power. |
Use Scenario: GPU voltage regulator module (VRM) in ultrabook platforms requiring compact, high-current power delivery. IC Role / Device Role / Timing Role: Primary power switch in multiphase buck stage, operating with interleaved 300–600 kHz PWM. Use Value: SOT669 mounting base transfers heat directly to chassis or internal copper, maintaining Tj < 105 °C under 45 A peak loads. |
| Portable Equipment | Switched-Mode Power Supplies |
Use Scenario: Battery-powered industrial handheld with 24 V Li-ion input and isolated 5 V/3.3 V auxiliary rails. IC Role / Device Role / Timing Role: Main switch in non-isolated buck controller driving 3 A output with tight transient response. Use Value: Logic-level VGS(th) ensures reliable start-up even as battery voltage drops to 20 V, avoiding gate drive failure. |
Use Scenario: 100 W AC-DC adapter using active clamp forward or LLC topology with secondary-side synchronous rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve efficiency above 85%. Use Value: Fast 11 ns reverse recovery and low 0.81 V forward drop reduce conduction and switching losses versus discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 8.0 mΩ @ 10 V; TO-220 package; higher Rth(j-c) = 2.5 K/W; no mounting-base drain connection. | Requires larger heatsink and more PCB space; less suitable for ultra-thin notebook VRMs. | Preferred where through-hole assembly or legacy TO-220 footprint is mandated. |
| Si7850DP-T1-GE3 | RDS(on) = 5.8 mΩ @ 10 V; PowerPAK SO-8; Rth(j-c) = 3.5 K/W; no integrated drain pad. | Higher thermal resistance limits power density; better suited for lower-current (<30 A) applications. | Chosen when SO-8 footprint compatibility and slightly lower RDS(on) outweigh thermal advantages of LFPAK. |
Compared with IRL3803PBF and Si7850DP-T1-GE3, PH7030L,115 delivers superior thermal performance via its mounting-base drain and achieves optimal balance of logic-level drive, low RDS(on), and avalanche ruggedness for space-constrained, high-current DC-DC stages.
Availability
PH7030L,115 is available at Aetrix Electronics and suitable for DC-DC converters, notebook computers, and switched-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PH7030L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
PH7030L,115 belongs to NXP's TrenchMOS logic-level power FET product line, engineered for high-efficiency, high-density power conversion in computing and portable electronics where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for PH7030L,115?
The PH7030L,115 is rated for 68 A continuous drain current at Tmb = 25 °C with VGS = 10 V. At elevated mounting base temperatures (e.g., 100 °C), the derated ID drops to 43 A. This rating assumes proper PCB copper area and thermal interface to the mounting base per Figure 1 in the datasheet.
Does PH7030L,115 support logic-level gate drive from 3.3 V microcontrollers?
Yes, PH7030L,115 supports logic-level gate drive: its VGS(th) is specified from 1.0 V to 2.0 V at 25 °C, and RDS(on) remains low at 9.6 mΩ (typ) with VGS = 4.5 V. This ensures full enhancement and minimal conduction loss when driven directly by 3.3 V GPIO or PWM controllers without external level shifters.
What is the thermal resistance from junction to mounting base for PH7030L,115?
The PH7030L,115 has a typical thermal resistance Rth(j-mb) of 2 K/W, measured from junction to the exposed mounting base (drain). This low value enables efficient heat transfer to the PCB copper pour or external heatsink, supporting high-power operation in compact layouts where traditional case-based packages would overheat.
Is PH7030L,115 avalanche-rated, and what is its energy rating?
Yes, PH7030L,115 is avalanche-rated with a non-repetitive drain-source avalanche energy EAS of 115 mJ under specified test conditions (VGS = 10 V, ID = 33.9 A, Vsup ≤ 30 V, unclamped, tp = 0.15 ms). This rating confirms robustness against inductive switching transients in DC-DC and motor drive applications.
What package type does PH7030L,115 use, and how is the mounting base connected?
PH7030L,115 uses the LFPAK (SOT669) package - a surface-mount plastic outline with an exposed metal mounting base. Per Table 2 and Figure 14 in the datasheet, the mounting base is electrically and thermally connected to the drain terminal, enabling simultaneous high-current conduction and efficient heat dissipation through the PCB.
PH7030L,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1362 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PH7030L,115 FAQ
1.How can I place an order for PH7030L,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PH7030L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PH7030L,115 reliable?
The price and inventory of PH7030L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH7030L,115 is usually 5 days.
3.What payment methods are accepted for PH7030L,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH7030L,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PH7030L,115?
PH7030L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PH7030L,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PH7030L,115?
For technical support, including PH7030L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH7030L,115 requirements.
6.How does Aetrix verify that PH7030L,115 is sourced from the original manufacturer or authorized distributors?
All PH7030L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH7030L,115 meets industry standards.
7.What is the process for return or replacement of PH7030L,115?
All PH7030L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH7030L,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PH7030L,115 part is unused and in its original packaging.
Return procedure for PH7030L,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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