NXP Semiconductors PH8030L,115

Overview

PH8030L,115 from Nexperia is a logic-level N-channel TrenchMOS power MOSFET in LFPAK (SOT669) package, designed for high-efficiency DC-to-DC converters and voltage regulators. It delivers 76.7 A continuous drain current at T_mb = 25 °C, 30 V V_DS, and 4.7 mΩ typical R_DS(on) at V_GS = 10 V - enabling low conduction loss in compact power stages.

For engineers reviewing the PH8030L,115 datasheet, PH8030L,115 pinout, PH8030L,115 application, or PH8030L,115 equivalent, key selection criteria include its 3.1 nC Q_GD for fast switching, 2 K/W R_th(j-mb) thermal resistance, logic-level gate drive compatibility down to 4.5 V, and avalanche ruggedness of 95 mJ - critical for robust synchronous buck and OR-ing designs.

Technical Context

This device employs TrenchMOS technology to achieve low R_DS(on) and optimized charge characteristics. Its gate threshold voltage ranges from 1.3 V to 2.15 V at 25 °C, ensuring reliable turn-on with standard logic-level drivers, while maintaining stable operation across −55 °C to +150 °C junction temperature.

The LFPAK package integrates the mounting base (mb) directly to the drain, providing low-inductance, high-current paths and superior thermal transfer to the PCB copper. Dynamic parameters - including 15.2 nC total gate charge, 2260 pF C_iss, and 34 ns reverse recovery time - are characterized at V_DS = 12 V and ID = 25 A for real-world converter design validation.

Key Specifications

Pinout & Package

PH8030L,115 uses the SOT669 (LFPAK) plastic surface-mount package: 4-terminal, single-ended layout with exposed mounting base (drain-connected) for low thermal and electrical impedance. Dimensions: 5.0 × 3.3 × 1.3 mm (L × W × H), with 0.65 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with PSMN1R0-30YL and IPB110N15N3 G, PH8030L,115 offers the best balance of low R_DS(on), low Q_GD, compact LFPAK footprint, and verified 30 V operation - making it the preferred choice for space-constrained, high-frequency, 12–24 V DC-DC designs where gate drive simplicity and thermal performance are critical.

Availability

PH8030L,115 is available at Aetrix Electronics and suitable for high-efficiency DC-to-DC converters, notebook computer power supplies, and industrial voltage regulators requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PH8030L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, and consumer markets with emphasis on reliability and efficiency.

PH8030L,115 belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-current, high-frequency switching in compact DC-DC and VRM applications where low R_DS(on), fast switching, and thermal performance are essential.

FAQ

What is the maximum continuous drain current for PH8030L,115 at 100 °C mounting base temperature?

The PH8030L,115 supports 48.5 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the LFPAK package and ensures safe operation under sustained high-power conditions without exceeding 150 °C junction temperature.

Does PH8030L,115 require a gate driver IC when used with a 3.3 V microcontroller?

Yes, PH8030L,115 can be directly driven by a 3.3 V microcontroller GPIO because its gate threshold voltage is 1.3–2.15 V (typ 1.7 V) and it achieves full enhancement at V_GS = 4.5 V. The PH8030L,115 delivers 7.3 mΩ R_DS(on) at 4.5 V, confirming robust logic-level operation without external level shifting.

What is the thermal resistance from junction to mounting base for PH8030L,115?

The PH8030L,115 has a maximum thermal resistance R_th(j-mb) of 2 K/W, as stated in Table 4. This value enables efficient heat transfer from the silicon die to the PCB copper or heatsink via the exposed mounting base, supporting high-power dissipation in compact layouts.

Is PH8030L,115 suitable for avalanche-prone circuits like inductive load switching?

Yes, PH8030L,115 is rated for non-repetitive drain-source avalanche energy of 95 mJ under defined test conditions (ID = 31 A, tp = 0.14 ms, V_DS ≤30 V). This makes the PH8030L,115 suitable for controlled avalanche operation in DC-DC converters and motor drive flyback paths where snubberless design is desired.

What is the gate-drain charge (Q_GD) of PH8030L,115 and why does it matter?

The PH8030L,115 has a typical gate-drain charge Q_GD of 3.1 nC, measured at ID = 25 A, V_DS = 12 V, and V_GS = 4.5 V. This low Q_GD minimizes Miller-induced switching delays and improves controllability during hard switching - a critical parameter for optimizing efficiency and EMI in high-frequency synchronous buck converters using PH8030L,115.