Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PH9025L,115

Part No.:
PH9025L,115
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixPH9025L,115.pdf
Description:
MOSFET N-CH 25V 66A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,857

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PH9025L,115 from NXP Semiconductors is a logic-level N-channel enhancement-mode TrenchMOS FET in LFPAK (SOT669) package, rated for 25 V VDS, 66 A continuous drain current at Tmb = 25 °C, and 9 mΩ maximum RDS(on) at VGS = 10 V. It delivers low conduction and switching losses and is optimized for high-efficiency DC-to-DC converters and voltage regulators.

For engineers reviewing the PH9025L,115 datasheet, PH9025L,115 pinout, PH9025L,115 application, or PH9025L,115 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 2 K/W junction-to-mounting-base thermal resistance, ruggedness-tested construction, and 100 % RG and avalanche energy validation per IEC 60134.

Technical Context

This device uses TrenchMOS technology to achieve low RDS(on) and fast switching with QGD = 2.7 nC (typ) and tf = 15 ns (typ). Its gate threshold voltage ranges from 1.3 V to 2.15 V at Tj = 25 °C, enabling reliable turn-on with standard 3.3 V or 5 V logic drivers.

The mounting base is internally connected to the drain, forming a low-inductance, thermally efficient power path. Thermal resistance Rth(j-mb) is 2 K/W, supporting high-power density designs when mounted on copper pads with adequate thermal relief.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 25 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input rails in buck converters and point-of-load regulators.
RDS(on) max 9 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 10 A, critical for efficiency in high-current power stages.
ID continuous 66 A @ Tmb = 25 °C - Supports high-current output stages without external heatsinking under controlled board thermal conditions.
QGD 2.7 nC (typ) - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching robustness.
Rth(j-mb) 2 K/W - Enables direct thermal coupling to PCB copper, allowing >50 W power dissipation with proper mounting base layout.
VGS(th) 1.3–2.15 V @ Tj = 25 °C - Ensures full enhancement with 3.3 V logic, eliminating need for gate boosters in low-voltage control circuits.
EDS(AL)S 55 mJ - Validated non-repetitive avalanche energy supports inductive load switching without snubbers in synchronous rectifier or motor drive applications.

Pinout & Package

PH9025L,115 is housed in the SOT669 (LFPAK) plastic surface-mount package - a 4-lead single-ended power package with an exposed mounting base electrically tied to the drain. The package features low thermal resistance and high power density, optimized for automated assembly and thermal management via PCB copper.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Common source connection for internal parallel die; low-inductance return path for high di/dt currents.
4 Gate (G) Control terminal; requires <20 V absolute max rating; 0.6 Ω typical gate resistance aids EMI control.
Mounting base Drain (D) Exposed metal pad tied directly to drain; serves as primary thermal and high-current power path to PCB.

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced down to 4.5 V VGS, compatible with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting.
100 % RG tested Each unit verified for gate resistance ≤0.6 Ω (typ), ensuring consistent switching speed and gate driver loading across production lots.
100 % ruggedness tested Every device validated for avalanche energy (55 mJ) and repetitive SOA compliance, reducing field failure risk in inductive switching.
Lead-free LFPAK package SOT669 meets RoHS and JEDEC MSL-1 standards; enables reflow-compatible assembly and superior thermal performance vs. SO-8.
Optimized for DC-DC converters Low QGD/QG ratio and 9 mΩ RDS(on) minimize both conduction and switching losses in synchronous buck topologies up to 1 MHz.

Applications

DC-to-DC Converters Switched-Mode Power Supplies

Use Scenario: High-current synchronous buck converter in telecom power modules delivering 12 V @ 40 A from 48 V input.

IC Role / Device Role / Timing Role: Low-side power switch handling continuous 40 A with minimal conduction loss and fast turn-off to reduce shoot-through risk.

Use Value: 9 mΩ RDS(on) limits I²R loss to ~14.4 W, while 2.7 nC QGD enables clean 500 kHz switching with standard gate drivers.

Use Scenario: Secondary-side synchronous rectifier in isolated 24 V → 5 V flyback supply for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to improve efficiency and reduce thermal stress at 100–200 kHz operation.

Use Value: VSD = 0.89 V at 25 A reduces forward drop by >400 mV vs. diode, cutting rectifier loss by >50 % and enabling smaller heatsinks.

Voltage Regulators PC Motherboards

Use Scenario: Point-of-load (POL) regulator supplying GPU core voltage (0.8–1.2 V) at up to 120 A in gaming laptops.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) MOSFET in multiphase buck stage, driven by dedicated controller with 4.5 V gate output.

Use Value: Logic-level VGS(th) ensures full enhancement at 4.5 V, while 2 K/W Rth(j-mb) allows direct thermal coupling to 2 oz copper planes for stable 120 A operation.

Use Scenario: CPU VRM high-side switch in ATX motherboard delivering 1.05 V @ 80 A to modern desktop processors.

IC Role / Device Role / Timing Role: Fast-switching, low-QGD N-channel FET used with bootstrap gate driver in 600–1000 kHz multiphase topology.

Use Value: 21 ns td(on) and 15 ns tf minimize dead-time losses, while 100 % avalanche testing ensures reliability during transient overloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon BSC014N04LS RDS(on) = 1.4 mΩ @ 4.5 V (lower), but VDS = 40 V (higher); SOT-223 package with higher Rth(j-a). Better for 3.3 V-driven 40 V systems; less suited for space-constrained 25 V designs due to larger footprint and inferior thermal path. Select BSC014N04LS only if lower RDS(on) at 4.5 V is critical and 40 V rating is acceptable; PH9025L,115 offers better thermal integration in compact layouts.
Vishay SiR872DP RDS(on) = 7.8 mΩ @ 10 V (slightly lower), but QGD = 4.1 nC (higher); PowerPAK SO-8 package with Rth(j-mb) ≈ 3.5 K/W. Higher gate charge increases switching loss at >300 kHz; thermal performance limits sustained >50 A operation without added copper. Choose SiR872DP for cost-sensitive 10 V gate drive systems where peak frequency <300 kHz; PH9025L,115 provides superior high-frequency efficiency and thermal headroom.

Compared with BSC014N04LS and SiR872DP, PH9025L,115 uniquely balances 25 V rating, 4.5 V logic compatibility, 2 K/W thermal resistance, and 2.7 nC QGD-making it optimal for compact, high-frequency, high-current DC-DC stages where thermal management and gate drive simplicity are prioritized.

Availability

PH9025L,115 is available at Aetrix Electronics and suitable for DC-to-DC converters, switched-mode power supplies, and voltage regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and computing applications.

Supply support for PH9025L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PH9025L,115 belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for high-efficiency, high-density power conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for PH9025L,115 at 100 °C mounting base temperature?

The PH9025L,115 supports 48 A continuous drain current at Tmb = 100 °C and VGS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limitations of the LFPAK package under real-world PCB thermal conditions and must be validated against actual board layout and airflow.

Does PH9025L,115 have avalanche capability, and how is it validated?

Yes, PH9025L,115 is 100 % ruggedness tested for non-repetitive drain-source avalanche energy, with EDS(AL)S = 55 mJ under defined conditions (ID = 33 A, tp = 0.16 ms, VDS ≤25 V). This validation ensures safe operation during inductive switching transients without external protection components.

Can PH9025L,115 be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, PH9025L,115 has a gate threshold voltage range of 1.3–2.15 V at Tj = 25 °C and achieves full enhancement at VGS = 4.5 V. While 3.3 V is below the guaranteed RDS(on) test condition, it provides sufficient overdrive for many low-duty-cycle or low-current applications; for full 66 A capability, 4.5 V or higher is recommended.

What is the thermal resistance from junction to mounting base for PH9025L,115, and how does it impact PCB design?

The PH9025L,115 has a typical Rth(j-mb) of 2 K/W, measured from silicon junction to the exposed mounting base. This requires direct soldering of the base to a large, low-thermal-resistance copper area (e.g., ≥200 mm² 2 oz copper) to realize the full 62.5 W Ptot rating at Tmb = 25 °C.

Is PH9025L,115 lead-free and RoHS compliant?

Yes, PH9025L,115 is supplied in a lead-free LFPAK (SOT669) package and complies with RoHS Directive 2011/65/EU. The "115" suffix confirms lead-free finish per NXP's ordering nomenclature, and the device is qualified to JEDEC J-STD-020 moisture sensitivity level MSL-1.

PH9025L,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
12.8 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1414 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

PH9025L,115 FAQ

1.How can I place an order for PH9025L,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH9025L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH9025L,115 reliable?

The price and inventory of PH9025L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH9025L,115 is usually 5 days.

3.What payment methods are accepted for PH9025L,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH9025L,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH9025L,115?

PH9025L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH9025L,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH9025L,115?

For technical support, including PH9025L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH9025L,115 requirements.

6.How does Aetrix verify that PH9025L,115 is sourced from the original manufacturer or authorized distributors?

All PH9025L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH9025L,115 meets industry standards.

7.What is the process for return or replacement of PH9025L,115?

All PH9025L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH9025L,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH9025L,115 part is unused and in its original packaging.

Return procedure for PH9025L,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PH9025L,115 Tags

  • PH9025L,115
  • PH9025L,115 PDF
  • PH9025L,115 Datasheet
  • PH9025L,115 Specifications
  • PH9025L,115 Images
  • NXP Semiconductors
  • NXP Semiconductors PH9025L,115
  • Buy PH9025L,115
  • PH9025L,115 Price
  • PH9025L,115 Distributor
  • PH9025L,115 Supplier
  • PH9025L,115 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER