NXP Semiconductors PH9025L,115
- Part No.:
- PH9025L,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PH9025L,115.pdf
- Description:
- MOSFET N-CH 25V 66A LFPAK56
- Quantity:
- Payment:

- Shipping:

Inventory:3,857
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PH9025L,115 from NXP Semiconductors is a logic-level N-channel enhancement-mode TrenchMOS FET in LFPAK (SOT669) package, rated for 25 V VDS, 66 A continuous drain current at Tmb = 25 °C, and 9 mΩ maximum RDS(on) at VGS = 10 V. It delivers low conduction and switching losses and is optimized for high-efficiency DC-to-DC converters and voltage regulators.
For engineers reviewing the PH9025L,115 datasheet, PH9025L,115 pinout, PH9025L,115 application, or PH9025L,115 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 2 K/W junction-to-mounting-base thermal resistance, ruggedness-tested construction, and 100 % RG and avalanche energy validation per IEC 60134.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) and fast switching with QGD = 2.7 nC (typ) and tf = 15 ns (typ). Its gate threshold voltage ranges from 1.3 V to 2.15 V at Tj = 25 °C, enabling reliable turn-on with standard 3.3 V or 5 V logic drivers.
The mounting base is internally connected to the drain, forming a low-inductance, thermally efficient power path. Thermal resistance Rth(j-mb) is 2 K/W, supporting high-power density designs when mounted on copper pads with adequate thermal relief.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input rails in buck converters and point-of-load regulators. |
| RDS(on) max | 9 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 10 A, critical for efficiency in high-current power stages. |
| ID continuous | 66 A @ Tmb = 25 °C - Supports high-current output stages without external heatsinking under controlled board thermal conditions. |
| QGD | 2.7 nC (typ) - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching robustness. |
| Rth(j-mb) | 2 K/W - Enables direct thermal coupling to PCB copper, allowing >50 W power dissipation with proper mounting base layout. |
| VGS(th) | 1.3–2.15 V @ Tj = 25 °C - Ensures full enhancement with 3.3 V logic, eliminating need for gate boosters in low-voltage control circuits. |
| EDS(AL)S | 55 mJ - Validated non-repetitive avalanche energy supports inductive load switching without snubbers in synchronous rectifier or motor drive applications. |
Pinout & Package
PH9025L,115 is housed in the SOT669 (LFPAK) plastic surface-mount package - a 4-lead single-ended power package with an exposed mounting base electrically tied to the drain. The package features low thermal resistance and high power density, optimized for automated assembly and thermal management via PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt currents. |
| 4 | Gate (G) | Control terminal; requires <20 V absolute max rating; 0.6 Ω typical gate resistance aids EMI control. |
| Mounting base | Drain (D) | Exposed metal pad tied directly to drain; serves as primary thermal and high-current power path to PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to 4.5 V VGS, compatible with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting. |
| 100 % RG tested | Each unit verified for gate resistance ≤0.6 Ω (typ), ensuring consistent switching speed and gate driver loading across production lots. |
| 100 % ruggedness tested | Every device validated for avalanche energy (55 mJ) and repetitive SOA compliance, reducing field failure risk in inductive switching. |
| Lead-free LFPAK package | SOT669 meets RoHS and JEDEC MSL-1 standards; enables reflow-compatible assembly and superior thermal performance vs. SO-8. |
| Optimized for DC-DC converters | Low QGD/QG ratio and 9 mΩ RDS(on) minimize both conduction and switching losses in synchronous buck topologies up to 1 MHz. |
Applications
| DC-to-DC Converters | Switched-Mode Power Supplies |
|---|---|
|
Use Scenario: High-current synchronous buck converter in telecom power modules delivering 12 V @ 40 A from 48 V input. IC Role / Device Role / Timing Role: Low-side power switch handling continuous 40 A with minimal conduction loss and fast turn-off to reduce shoot-through risk. Use Value: 9 mΩ RDS(on) limits I²R loss to ~14.4 W, while 2.7 nC QGD enables clean 500 kHz switching with standard gate drivers. |
Use Scenario: Secondary-side synchronous rectifier in isolated 24 V → 5 V flyback supply for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to improve efficiency and reduce thermal stress at 100–200 kHz operation. Use Value: VSD = 0.89 V at 25 A reduces forward drop by >400 mV vs. diode, cutting rectifier loss by >50 % and enabling smaller heatsinks. |
| Voltage Regulators | PC Motherboards |
|
Use Scenario: Point-of-load (POL) regulator supplying GPU core voltage (0.8–1.2 V) at up to 120 A in gaming laptops. IC Role / Device Role / Timing Role: High-current, low-RDS(on) MOSFET in multiphase buck stage, driven by dedicated controller with 4.5 V gate output. Use Value: Logic-level VGS(th) ensures full enhancement at 4.5 V, while 2 K/W Rth(j-mb) allows direct thermal coupling to 2 oz copper planes for stable 120 A operation. |
Use Scenario: CPU VRM high-side switch in ATX motherboard delivering 1.05 V @ 80 A to modern desktop processors. IC Role / Device Role / Timing Role: Fast-switching, low-QGD N-channel FET used with bootstrap gate driver in 600–1000 kHz multiphase topology. Use Value: 21 ns td(on) and 15 ns tf minimize dead-time losses, while 100 % avalanche testing ensures reliability during transient overloads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS | RDS(on) = 1.4 mΩ @ 4.5 V (lower), but VDS = 40 V (higher); SOT-223 package with higher Rth(j-a). | Better for 3.3 V-driven 40 V systems; less suited for space-constrained 25 V designs due to larger footprint and inferior thermal path. | Select BSC014N04LS only if lower RDS(on) at 4.5 V is critical and 40 V rating is acceptable; PH9025L,115 offers better thermal integration in compact layouts. |
| Vishay SiR872DP | RDS(on) = 7.8 mΩ @ 10 V (slightly lower), but QGD = 4.1 nC (higher); PowerPAK SO-8 package with Rth(j-mb) ≈ 3.5 K/W. | Higher gate charge increases switching loss at >300 kHz; thermal performance limits sustained >50 A operation without added copper. | Choose SiR872DP for cost-sensitive 10 V gate drive systems where peak frequency <300 kHz; PH9025L,115 provides superior high-frequency efficiency and thermal headroom. |
Compared with BSC014N04LS and SiR872DP, PH9025L,115 uniquely balances 25 V rating, 4.5 V logic compatibility, 2 K/W thermal resistance, and 2.7 nC QGD-making it optimal for compact, high-frequency, high-current DC-DC stages where thermal management and gate drive simplicity are prioritized.
Availability
PH9025L,115 is available at Aetrix Electronics and suitable for DC-to-DC converters, switched-mode power supplies, and voltage regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and computing applications.
Supply support for PH9025L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
PH9025L,115 belongs to NXP's TrenchMOS logic-level power FET product line, engineered specifically for high-efficiency, high-density power conversion in computing, telecom, and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for PH9025L,115 at 100 °C mounting base temperature?
The PH9025L,115 supports 48 A continuous drain current at Tmb = 100 °C and VGS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limitations of the LFPAK package under real-world PCB thermal conditions and must be validated against actual board layout and airflow.
Does PH9025L,115 have avalanche capability, and how is it validated?
Yes, PH9025L,115 is 100 % ruggedness tested for non-repetitive drain-source avalanche energy, with EDS(AL)S = 55 mJ under defined conditions (ID = 33 A, tp = 0.16 ms, VDS ≤25 V). This validation ensures safe operation during inductive switching transients without external protection components.
Can PH9025L,115 be driven directly by a 3.3 V microcontroller GPIO pin?
Yes, PH9025L,115 has a gate threshold voltage range of 1.3–2.15 V at Tj = 25 °C and achieves full enhancement at VGS = 4.5 V. While 3.3 V is below the guaranteed RDS(on) test condition, it provides sufficient overdrive for many low-duty-cycle or low-current applications; for full 66 A capability, 4.5 V or higher is recommended.
What is the thermal resistance from junction to mounting base for PH9025L,115, and how does it impact PCB design?
The PH9025L,115 has a typical Rth(j-mb) of 2 K/W, measured from silicon junction to the exposed mounting base. This requires direct soldering of the base to a large, low-thermal-resistance copper area (e.g., ≥200 mm² 2 oz copper) to realize the full 62.5 W Ptot rating at Tmb = 25 °C.
Is PH9025L,115 lead-free and RoHS compliant?
Yes, PH9025L,115 is supplied in a lead-free LFPAK (SOT669) package and complies with RoHS Directive 2011/65/EU. The "115" suffix confirms lead-free finish per NXP's ordering nomenclature, and the device is qualified to JEDEC J-STD-020 moisture sensitivity level MSL-1.
PH9025L,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.15V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 12.8 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1414 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PH9025L,115 FAQ
1.How can I place an order for PH9025L,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PH9025L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PH9025L,115 reliable?
The price and inventory of PH9025L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH9025L,115 is usually 5 days.
3.What payment methods are accepted for PH9025L,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH9025L,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PH9025L,115?
PH9025L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PH9025L,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PH9025L,115?
For technical support, including PH9025L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH9025L,115 requirements.
6.How does Aetrix verify that PH9025L,115 is sourced from the original manufacturer or authorized distributors?
All PH9025L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH9025L,115 meets industry standards.
7.What is the process for return or replacement of PH9025L,115?
All PH9025L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH9025L,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PH9025L,115 part is unused and in its original packaging.
Return procedure for PH9025L,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PH9025L,115 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
