Nexperia USA Inc. PH955L,115

Overview

PH955L,115 from Nexperia is an N-channel TrenchMOS logic-level power MOSFET in LFPAK (SOT669) package, rated for 55 V V_DS, 62.5 A continuous drain current at T_mb = 25 °C, and 6.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers low conduction loss and supports direct drive from 4.5 V–5 V logic sources in high-current DC-DC converters and motor control circuits.

For engineers reviewing the PH955L,115 datasheet, PH955L,115 pinout, PH955L,115 application, or PH955L,115 equivalent, key selection criteria include its 2 K/W junction-to-mounting-base thermal resistance, 16.4 nC Q_GD, 42 nC total gate charge, and robust 195 mJ non-repetitive avalanche energy - all critical for high-efficiency, thermally constrained switching designs.

Technical Context

This device employs TrenchMOS technology to achieve low R_DS(on) with logic-level gate drive compatibility (V_GS(th) = 1–2 V typ). Its 4-pin LFPAK package integrates a large mounting base directly connected to the drain, enabling efficient heat transfer to the PCB copper plane.

The source-drain diode exhibits 0.85–1.2 V forward voltage at 25 A and 62 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Avalanche ruggedness is characterized per unclamped inductive switching tests (E_DS(AL)S = 195 mJ).

Key Specifications

Pinout & Package

PH955L,115 uses the SOT669 (LFPAK) plastic surface-mount package with exposed drain mounting base. The package features a single-ended 4-lead configuration optimized for high-current PCB thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with PSMN2R0-30YL and IPB057N06L3, PH955L,115 offers optimal balance of 55 V rating, 6.2 mΩ R_DS(on), 42 nC Q_G, and LFPAK thermal performance - making it ideal for space- and thermally constrained 36–48 V industrial and computing power stages.

Availability

PH955L,115 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and portable equipment requiring stable component supply and proven industrial qualification.

Supply support for PH955L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

PH955L,115 belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered for high-current, low-voltage switching in thermally demanding applications where gate drive simplicity and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for PH955L,115 at 100 °C mounting base temperature?

The maximum continuous drain current is 43.7 A at T_mb = 100 °C and V_GS = 5 V, as specified in Table 4 (Limiting Values). This derating reflects thermal limits imposed by the 2 K/W R_th(j-mb) and 150 °C max junction temperature, not package current-carrying capacity alone.

Can PH955L,115 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate-source threshold voltage is 1–2 V typical at 25 °C, and it achieves full enhancement with R_DS(on) = 7.1 mΩ at V_GS = 4.5 V. At 3.3 V, it operates in linear region with higher on-resistance (~12–15 mΩ), suitable for low-duty-cycle or low-current switching but not high-efficiency continuous conduction.

How does the LFPAK package improve thermal performance versus SO-8?

The LFPAK (SOT669) exposes the drain as a large copper mounting base soldered directly to PCB copper, achieving 2 K/W R_th(j-mb). In contrast, SO-8 relies on lead-frame conduction with R_th(j-a) > 60 K/W - resulting in ~3× better steady-state thermal resistance and enabling 62.5 A rating without heatsink.

Is PH955L,115 qualified for automotive applications?

No - the datasheet explicitly states it is "designed and qualified for use in computing, communications, consumer and industrial applications only." It lacks AEC-Q101 qualification, and its 150 °C max junction temperature and 195 mJ avalanche rating do not meet automotive stress test requirements for under-hood deployment.