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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PH9930L,115

Name: PH9930L,115
Brand: NXP Semiconductors
SKU: PH9930L,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PH9930L,115

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PH9930L,115.pdf

Description:: MOSFET N-CH 30V 63A LFPAK56

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Product details

Overview

PH9930L,115 from Nexperia is a logic-level N-channel TrenchMOS FET in LFPAK (SOT669) package, designed for high-efficiency DC-to-DC converters and voltage regulators. It delivers R_DS(on) ≤ 9.9 mΩ at V_GS = 10 V and I_D = 25 A, supports 30 V V_DS, and features 100 % ruggedness testing and lead-free construction.

For engineers reviewing the PH9930L,115 datasheet, PH9930L,115 pinout, PH9930L,115 application, or PH9930L,115 equivalent, key selection criteria include low gate charge (Q_GD = 3.2 nC), thermal resistance R_th(j-mb) = 2 K/W, avalanche energy rating (53 mJ), and compatibility with 4.5 V logic-level drive in compact power stages.

Technical Context

This device employs TrenchMOS technology to achieve optimized conduction and switching losses in synchronous buck topologies. Its gate threshold voltage (V_GS(th) = 1.3–2.15 V at T_j = 25 °C) enables reliable turn-on with standard 3.3 V/5 V controllers, while its low C_iss (1565 pF) and fast switching times (t_r = 41 ns, t_f = 25 ns) support high-frequency operation up to 1 MHz.

The mounting base (pin mb) is internally connected to drain (D), enabling direct thermal coupling to PCB copper planes. Its 100 % RG-tested gate ensures consistent dynamic performance, and the integrated source-drain diode (V_SD = 0.89–1.16 V at I_S = 25 A) supports freewheeling in non-synchronous designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC-DC stages.
R_DS(on) @ V_GS = 10 V	7.2–9.9 mΩ - Enables <1 W conduction loss at 30 A, critical for high-current point-of-load regulation.
Q_GD	3.2 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
R_th(j-mb)	2 K/W - Enables >60 W power dissipation with minimal junction-to-board temperature rise when mounted on ≥200 mm² copper.
I_D (continuous)	63 A @ T_mb = 25 °C - Supports high-current synchronous rectification without external heatsinking in space-constrained layouts.
E_DS(AL)S	53 mJ - Confirmed unclamped inductive avalanche capability allows robust operation during load dump or short-circuit transients.
V_GS(th)	1.3–2.15 V @ T_j = 25 °C - Ensures full enhancement with 3.3 V microcontroller GPIO or PWM controller outputs.

Pinout & Package

PH9930L,115 uses the SOT669 (LFPAK) plastic surface-mount package with exposed mounting base for enhanced thermal performance. The 4-pin configuration integrates drain connection via the thermally optimized metal base.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Parallel source terminals reduce current density and parasitic inductance in high-di/dt switching paths.
4	Gate (G)	Single gate input with typical R_G = 0.56 Ω - supports stable gate drive without external series resistance in most 5 V logic-driven applications.
mb	Mounting Base / Drain (D)	Exposed copper pad electrically connected to drain - serves as primary thermal path and high-current drain terminal; requires soldered thermal pad on PCB.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.15 V ensures full enhancement using 3.3 V or 5 V controllers - eliminates need for gate boosters in low-voltage systems.
TrenchMOS architecture	Delivers 30 % lower R_DS(on) × Q_G figure-of-merit vs. planar MOSFETs - directly improves efficiency in 300 kHz–1 MHz DC-DC converters.
100 % ruggedness tested	Each unit passes standardized avalanche and UIS stress tests - guarantees reliability under real-world overcurrent and inductive switching conditions.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - supports lead-free assembly without derating or process modification.
Optimized for DC-DC converters	Low Q_GD/Q_G ratio (24 %) and fast t_r/t_f reduce switching losses in synchronous buck stages operating above 500 kHz.

Applications

Server VRMs	Industrial Motor Drives
Use Scenario: High-density 12 V input → 0.8–3.3 V output point-of-load regulation for CPU/GPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, switching at 600–800 kHz with precise dead-time control. Use Value: 7.2 mΩ R_DS(on) at 10 V reduces conduction loss by 40 % vs. legacy 12 mΩ devices, enabling higher current per phase without thermal throttling.	Use Scenario: Half-bridge high-side switch in 24 V brushless DC motor control for factory automation actuators. IC Role / Device Role / Timing Role: Power switch driving inductive loads with repetitive 10–50 A peak currents and 10 µs–100 µs pulse widths. Use Value: 53 mJ avalanche energy rating withstands back-EMF spikes during rapid deceleration, eliminating need for external snubbers.
PC Motherboard VRMs	Telecom DC-DC Modules
Use Scenario: Compact 5 V input → 1.2 V output regulator delivering up to 60 A to SoC on consumer-grade motherboards. IC Role / Device Role / Timing Role: Low-side synchronous FET in dual-phase interleaved buck, driven by integrated controller with 4.5 V gate output. Use Value: Logic-level V_GS(th) ensures full turn-on at 4.5 V, avoiding shoot-through risk and enabling tighter duty-cycle control below 10 %.	Use Scenario: Primary-side switch in isolated 48 V → 12 V intermediate bus converter for 5G base station power shelves. IC Role / Device Role / Timing Role: High-efficiency switching element operating at 350 kHz with zero-voltage switching assistance. Use Value: 1565 pF C_iss and 186 pF Crss minimize capacitive losses and improve ZVS soft-switching window versus comparable 2000+ pF devices.

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 12 V input → 0.8–3.3 V output point-of-load regulation for CPU/GPU cores in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, switching at 600–800 kHz with precise dead-time control.

Use Value: 7.2 mΩ R_DS(on) at 10 V reduces conduction loss by 40 % vs. legacy 12 mΩ devices, enabling higher current per phase without thermal throttling.

Use Scenario: Half-bridge high-side switch in 24 V brushless DC motor control for factory automation actuators.

IC Role / Device Role / Timing Role: Power switch driving inductive loads with repetitive 10–50 A peak currents and 10 µs–100 µs pulse widths.

Use Value: 53 mJ avalanche energy rating withstands back-EMF spikes during rapid deceleration, eliminating need for external snubbers.

PC Motherboard VRMs

Telecom DC-DC Modules

Use Scenario: Compact 5 V input → 1.2 V output regulator delivering up to 60 A to SoC on consumer-grade motherboards.

IC Role / Device Role / Timing Role: Low-side synchronous FET in dual-phase interleaved buck, driven by integrated controller with 4.5 V gate output.

Use Value: Logic-level V_GS(th) ensures full turn-on at 4.5 V, avoiding shoot-through risk and enabling tighter duty-cycle control below 10 %.

Use Scenario: Primary-side switch in isolated 48 V → 12 V intermediate bus converter for 5G base station power shelves.

IC Role / Device Role / Timing Role: High-efficiency switching element operating at 350 kHz with zero-voltage switching assistance.

Use Value: 1565 pF C_iss and 186 pF Crss minimize capacitive losses and improve ZVS soft-switching window versus comparable 2000+ pF devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN1R0-30YL,115	R_DS(on) = 1.0 mΩ @ 10 V (lower), but Q_G = 42 nC (higher); same SOT669 package and 30 V rating.	Better for ultra-low-loss continuous conduction mode; less suitable for high-frequency (>1 MHz) due to higher gate charge.	Choose PSMN1R0-30YL,115 only if conduction loss dominates system efficiency and switching frequency is ≤500 kHz.
IPB110N03L G	TO-263 package (D²PAK), R_DS(on) = 1.1 mΩ @ 10 V, Q_GD = 3.5 nC - similar dynamic performance but larger footprint and higher thermal resistance (R_th(j-c) = 2.5 K/W).	Requires more PCB area and heatsinking; suited for legacy designs with D²PAK footprints or higher ambient temperatures.	Select IPB110N03L G only when board layout constraints allow TO-263 or when existing thermal design cannot accommodate LFPAK's mounting-base requirements.

Compared with PSMN1R0-30YL,115 and IPB110N03L G, PH9930L,115 offers optimal balance of low R_DS(on), moderate Q_G, and compact LFPAK thermal performance - making it preferred for new 500 kHz–1 MHz DC-DC designs where size, efficiency, and reliability are jointly constrained.

Availability

PH9930L,115 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC-DC modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for PH9930L,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division. It focuses on automotive, industrial, computing, and consumer markets with emphasis on reliability and manufacturability.

PH9930L,115 belongs to Nexperia's TrenchMOS logic-level PowerMOS family, engineered specifically for high-efficiency, high-current DC-DC conversion in space- and thermally constrained applications.

FAQ

What is the maximum continuous drain current for PH9930L,115 at 100 °C mounting base temperature?

The PH9930L,115 supports 39 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This value is defined in the Absolute Maximum Ratings table and confirmed by derating curves in Figure 2 of the datasheet. Designers must ensure PCB copper area and airflow maintain T_mb ≤ 100 °C to sustain this current without exceeding junction temperature limits.

Does PH9930L,115 require a gate resistor for standard 5 V PWM controller drive?

PH9930L,115 has a typical gate resistance (R_G) of 0.56 Ω and low total gate charge (Q_G(tot) = 13.3 nC), allowing direct drive from most 5 V PWM controllers without external gate resistors in ≤1 MHz applications. However, a small series resistor (2–10 Ω) is recommended to damp ringing and control dV/dt in high-noise environments or when layout parasitics exceed 1 nH.

How is thermal performance measured for PH9930L,115, and what does R_th(j-mb) = 2 K/W mean in practice?

Thermal resistance R_th(j-mb) = 2 K/W for PH9930L,115 is measured from junction to mounting base under standardized test conditions (per JEDEC JESD51-14). In practice, this means a 62.5 W power dissipation (P_tot at T_mb = 25 °C) results in a 125 K temperature rise from base to junction - so maintaining T_mb ≤ 50 °C ensures T_j stays within the 150 °C absolute maximum limit.

Can PH9930L,115 be used in synchronous rectification for 48 V input DC-DC converters?

No - PH9930L,115 has a 30 V V_DS rating and is unsuitable for 48 V nominal input applications due to insufficient voltage margin against transients and ripple. It is rated for ≤30 V DC blocking and intended for 12 V, 24 V, or 36 V max input systems. For 48 V inputs, a 60 V or 80 V rated MOSFET such as PH9960L,115 is required.

Is PH9930L,115 pin-compatible with other SOT669 MOSFETs like PSMN2R0-30YLD?

Yes - PH9930L,115 shares the identical SOT669 (LFPAK) outline and 4-pin pinout (pins 1–3 = source, pin 4 = gate, mounting base = drain) with PSMN2R0-30YLD and other Nexperia LFPAK devices. Mechanical and electrical pin compatibility is confirmed by JEDEC MO-235 registration and package drawings in the datasheet, enabling drop-in replacement where R_DS(on) and Q_G requirements align.

PH9930L,115 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 13.3 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1565 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PH9930L,115 FAQ

1.How can I place an order for PH9930L,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PH9930L,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PH9930L,115 reliable?

The price and inventory of PH9930L,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PH9930L,115 is usually 5 days.

3.What payment methods are accepted for PH9930L,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PH9930L,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PH9930L,115?

PH9930L,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PH9930L,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PH9930L,115?

For technical support, including PH9930L,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PH9930L,115 requirements.

6.How does Aetrix verify that PH9930L,115 is sourced from the original manufacturer or authorized distributors?

All PH9930L,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PH9930L,115 meets industry standards.

7.What is the process for return or replacement of PH9930L,115?

All PH9930L,115 units undergo pre-shipment inspection (PSI). If there is an issue with PH9930L,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PH9930L,115 part is unused and in its original packaging.

Return procedure for PH9930L,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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