NXP Semiconductors PHB101NQ04T,118

Overview

PHB101NQ04T,118 from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, designed for high-current switching in DC-DC converters and industrial motor control. It delivers 75 A continuous drain current at 10 V gate drive, 40 V drain-source breakdown voltage, and 6.6 mΩ typical R_DS(on) at T_j = 25 °C - enabling low conduction loss in 12–24 V systems.

For engineers reviewing the PHB101NQ04T,118 datasheet, PHB101NQ04T,118 pinout, PHB101NQ04T,118 application, or PHB101NQ04T,118 equivalent, key selection criteria include its standard-level gate drive compatibility (V_GS(th) = 2–4.4 V), avalanche ruggedness (200 mJ), thermal resistance (R_th(j-mb) = 0.95 K/W), and suitability for high-pulse-current loads such as solenoids and UPS inverters.

Technical Context

This device uses TrenchMOS technology to achieve low on-resistance while maintaining robust safe operating area (SOA) up to 240 A peak drain current and 157 W total power dissipation at T_mb = 25 °C. Its gate charge profile (Q_G(tot) = 36.6 nC, Q_GD = 12.6 nC) supports efficient hard-switching in medium-frequency power stages.

The integrated source-drain diode exhibits 0.85 V forward voltage at 25 A and 53 ns reverse recovery time, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal design leverages the mounting base (connected to drain) for direct heatsink attachment with 0.95 K/W junction-to-base resistance.

Key Specifications

Pinout & Package

PHB101NQ04T,118 is housed in a plastic single-ended surface-mounted D2PAK package (SOT404), featuring a large copper mounting base electrically connected to the drain terminal for low-inductance, high-current routing and thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IRF1404ZPBF, PHB101NQ04T,118 offers the optimal balance of low R_DS(on), D2PAK thermal performance, and standard-level gate drive - making it preferred for space-constrained 24 V industrial converters where mounting base thermal coupling is essential.

Availability

PHB101NQ04T,118 is available at Aetrix Electronics and suitable for DC-DC converters, uninterruptible power supplies, motor control circuits, and solenoid/lamp drivers requiring stable component supply across industrial production cycles.

Supply support for PHB101NQ04T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PHB101NQ04T,118 belongs to NXP's TrenchMOS power MOSFET product line, engineered for high-current, standard-gate-drive switching in computing, communications, consumer, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for PHB101NQ04T,118?

The PHB101NQ04T,118 supports 75 A continuous drain current at T_mb = 25 °C with V_GS = 10 V. At elevated mounting base temperatures (e.g., 100 °C), this derates to 71 A per the SOA curve in Figure 1. This rating assumes proper heatsinking via the mounting base, which serves as the primary thermal path.

Does PHB101NQ04T,118 require a gate driver IC, or can it be driven directly by a microcontroller?

The PHB101NQ04T,118 has a gate threshold voltage (V_GS(th)) of 2–4.4 V and is specified for standard-level gate drive, meaning it can be switched fully on using a 5 V or 10 V logic signal. However, due to its 36.6 nC total gate charge, a dedicated gate driver is recommended for switching above 50 kHz to ensure fast, low-loss transitions and avoid shoot-through in bridge configurations.

What is the thermal resistance from junction to mounting base for PHB101NQ04T,118?

The PHB101NQ04T,118 has a maximum thermal resistance of R_th(j-mb) = 0.95 K/W from junction to mounting base, measured under transient conditions. This low value reflects the direct copper thermal path from die to the exposed drain-connected mounting base, enabling efficient heat transfer to an external heatsink without requiring thermal vias or complex PCB stack-ups.

Is PHB101NQ04T,118 avalanche-rated, and what is its rated energy?

Yes, the PHB101NQ04T,118 is avalanche-rated with a non-repetitive drain-source avalanche energy (E_DS(AL)S) of 200 mJ under specified test conditions (V_GS = 10 V, I_D = 45 A, V_sup ≤55 V, unclamped, t_p = 0.17 ms). This rating provides design margin against inductive switching transients in motor and solenoid applications.

What package type does PHB101NQ04T,118 use, and how is pin 2 configured?

The PHB101NQ04T,118 uses the D2PAK (SOT404) plastic surface-mount package with three leads - gate (pin 1), drain (pin 2), and source (pin 3). Pin 2 is the drain terminal and is internally connected to the mounting base. As noted in the datasheet, "It is not possible to make a connection to pin 2" because it is fully covered by the mounting base and intended solely for thermal and electrical connection to the heatsink.