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NXP Semiconductors PHB108NQ03LT,118
- Part No.:
- PHB108NQ03LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB108NQ03LT,118.pdf
- Description:
- MOSFET N-CH 25V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,029
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Product details
Overview
PHB108NQ03LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET in D2PAK (SOT404) package, rated for 25 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 6.7 mΩ typical RDS(on) at VGS = 5 V. It serves as a high-current, low-loss switching element in DC-DC converters and switch-mode power supplies.
For engineers reviewing the PHB108NQ03LT datasheet, PHB108NQ03LT pinout, PHB108NQ03LT application, or PHB108NQ03LT equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.5 V typ), low Qgd (5.6 nC), avalanche ruggedness (180 mJ), and thermal resistance Rth(j-mb) = 0.8 K/W - critical for high-power density thermal design.
Technical Context
This device employs TrenchMOS™ technology to achieve very low on-state resistance and low gate charge. Its gate-source threshold voltage of 1.5 V (typ) enables direct drive from 3.3 V or 5 V logic controllers without level shifting.
The mounting base is internally connected to the drain terminal, enabling low-inductance, high-current PCB layout with direct thermal coupling to heatsinks. It supports unclamped inductive switching with 180 mJ non-repetitive avalanche energy at Tj = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage; suitable for 24 V rail systems with margin. |
| ID (continuous) | 75 A at Tmb = 25 °C - High current capability enables single-device solutions in high-power SMPS outputs. |
| RDS(on) | 6.7 mΩ (typ) at VGS = 5 V - Low conduction loss reduces heat generation and improves efficiency in high-current paths. |
| Qgd | 5.6 nC (typ) - Low Miller charge minimizes switching losses and improves controllability during hard-switching transitions. |
| Rth(j-mb) | 0.8 K/W - Enables efficient thermal transfer to heatsink; supports >150 W continuous dissipation with proper cooling. |
| VGS(th) | 1.5 V (typ) - Logic-level threshold allows direct interface with microcontrollers and PWM ICs operating at 3.3 V/5 V. |
| EAS | 180 mJ - Avalanche-rated for robustness in inductive load switching, reducing need for external snubbers. |
Pinout & Package
PHB108NQ03LT uses the D2PAK (SOT404) plastic surface-mount package with 3 leads (one lead cropped). The mounting base is electrically connected to the drain and serves as the primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; low input capacitance (Ciss = 1375 pF) enables fast switching with modest gate drivers. |
| 2 | Drain (D) | Main power output terminal; internally bonded to mounting base for low-inductance, high-current routing and thermal conduction. |
| 3 | Source (S) | Power return path; referenced to control ground; source-drain diode supports synchronous rectification or freewheeling. |
| Mounting base | Drain (D) | Electrically and thermally tied to pin 2; must be soldered to large copper area or heatsink for thermal management and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.5 V (typ) enables direct 3.3 V/5 V MCU or PWM IC control without gate driver ICs. |
| Low RDS(on) | 6.7 mΩ at VGS = 5 V reduces conduction loss by >30% vs. comparable 8–10 mΩ devices at same current. |
| Low Qgd | 5.6 nC minimizes Miller-induced switching delay and dv/dt-induced false turn-on in high-frequency converters. |
| Avalanche ruggedness | 180 mJ non-repetitive EAS supports reliable operation in inductive switching applications without added clamping. |
| Lead-free construction | RoHS-compliant packaging meets industrial and automotive environmental compliance requirements. |
Applications
| DC-DC Converter Output Switch | Switch-Mode Power Supply (SMPS) Primary Switch |
|---|---|
|
Use Scenario: High-current buck converter in telecom power shelf delivering 12 V/40 A from 48 V input. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 200–500 kHz with gate drive synchronized to controller's PWM output. Use Value: 6.7 mΩ RDS(on) and 5.6 nC Qgd reduce both conduction and switching losses, enabling >95% efficiency at full load. |
Use Scenario: 24 V input, 3.3 V/20 A point-of-load regulator in server motherboard VRM. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated gate driver IC with precise timing alignment. Use Value: Low VSD (0.86 V typ) and fast trr (34 ns) minimize reverse recovery loss and improve light-load efficiency. |
| Motor Drive Half-Bridge Leg | Hot-Swap Controller Load Switch |
|
Use Scenario: 24 V BLDC motor driver stage handling peak currents up to 120 A in power tools. IC Role / Device Role / Timing Role: High-current N-channel switch in half-bridge configuration; driven by isolated gate driver with shoot-through protection. Use Value: 240 A peak drain current (IDM) and 180 mJ avalanche energy ensure robustness against motor back-EMF transients. |
Use Scenario: 12 V hot-swap module protecting backplane from inrush and short-circuit faults in network equipment. IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap controller IC for soft-start and current limiting. Use Value: Low RDS(on) minimizes voltage drop during normal operation; low Qg enables fast fault response (<1 µs overcurrent shutdown). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 8.0 mΩ (VGS = 5 V); Qgd = 7.2 nC; Rth(j-mb) = 1.0 K/W; TO-220AB package. | Higher thermal resistance and larger footprint limit power density; less suitable for compact, high-current SMT designs. | Choose when through-hole assembly or legacy TO-220 footprint is required; avoid where board space or thermal performance is constrained. |
| STL110N3LLH6 | RDS(on) = 5.5 mΩ (VGS = 4.5 V); Qgd = 6.8 nC; DFN 8×8 mm package; no exposed drain pad. | Lower RDS(on) but lacks integrated drain-connected thermal pad; requires more complex PCB thermal vias for equivalent cooling. | Prefer for ultra-low RDS(on) needs if thermal design accommodates DFN limitations; PHB108NQ03LT offers superior thermal path via mounting base. |
Compared with IRL3803PBF and STL110N3LLH6, PHB108NQ03LT delivers optimal balance of low RDS(on), low Qgd, and industry-leading Rth(j-mb) in a proven SMT package - making it especially suited for high-efficiency, high-power-density DC-DC and SMPS applications where thermal management is critical.
Availability
PHB108NQ03LT is available at Aetrix Electronics and suitable for DC-DC converters, switch-mode power supplies, and motor drive circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHB108NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with deep expertise in automotive, industrial, and power management technologies.
The PHB108NQ03LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-current, high-efficiency switching in compact, thermally demanding power conversion systems.
FAQ
What is the maximum continuous drain current rating for PHB108NQ03LT?
The PHB108NQ03LT is rated for 75 A continuous drain current (ID) at mounting base temperature (Tmb) = 25 °C and VGS = 5 V. At Tmb = 100 °C, it maintains the same 75 A rating due to its optimized thermal design and low RDS(on) temperature coefficient.
Does PHB108NQ03LT support logic-level gate drive from a 3.3 V microcontroller?
Yes, PHB108NQ03LT has a typical gate-source threshold voltage (VGS(th)) of 1.5 V and guaranteed maximum of 2.0 V at Tj = 25 °C. With 3.3 V drive, it achieves full enhancement and low RDS(on), making PHB108NQ03LT compatible with standard 3.3 V logic interfaces without external level shifters.
How is thermal management implemented in the PHB108NQ03LT package?
The PHB108NQ03LT uses a D2PAK (SOT404) package with an exposed mounting base electrically and thermally connected to the drain. This base provides a low-resistance thermal path (Rth(j-mb) = 0.8 K/W max) to external heatsinks or PCB copper planes, enabling efficient heat extraction essential for high-power operation.
What is the avalanche energy rating of PHB108NQ03LT and how is it tested?
The PHB108NQ03LT is rated for 180 mJ non-repetitive drain-source avalanche energy (EAS) under unclamped inductive load conditions: ID = 43 A, tp = 0.25 ms, VDD ≤ 25 V, RGS = 50 Ω, VGS = 10 V, starting at Tj = 25 °C. This rating ensures robustness in real-world inductive switching events without external protection.
Is PHB108NQ03LT RoHS compliant and lead-free?
Yes, PHB108NQ03LT features lead-free construction and complies with RoHS Directive 2011/65/EU. The device uses matte tin plating on terminals and halogen-free molding compound, meeting environmental requirements for industrial and commercial electronics manufacturing.
PHB108NQ03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.3 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1375 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 187W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB108NQ03LT,118 FAQ
1.How can I place an order for PHB108NQ03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB108NQ03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB108NQ03LT,118 reliable?
The price and inventory of PHB108NQ03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB108NQ03LT,118 is usually 5 days.
3.What payment methods are accepted for PHB108NQ03LT,118?
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4.How is shipping managed for PHB108NQ03LT,118?
PHB108NQ03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB108NQ03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB108NQ03LT,118?
For technical support, including PHB108NQ03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB108NQ03LT,118 requirements.
6.How does Aetrix verify that PHB108NQ03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB108NQ03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB108NQ03LT,118 meets industry standards.
7.What is the process for return or replacement of PHB108NQ03LT,118?
All PHB108NQ03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB108NQ03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB108NQ03LT,118 part is unused and in its original packaging.
Return procedure for PHB108NQ03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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