NXP Semiconductors PHB110NQ06LT,118

Overview

PHB110NQ06LT from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 6.2 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-efficiency switching element in DC-DC converters, motor control, and UPS systems where low gate drive voltage compatibility and low conduction loss are critical.

For engineers reviewing the PHB110NQ06LT datasheet, PHB110NQ06LT pinout, PHB110NQ06LT application, or PHB110NQ06LT equivalent, this page delivers verified electrical parameters, thermal resistance (R_th(j-mb) = 0.75 K/W), avalanche energy rating (280 mJ), gate charge profile (Q_G(tot) = 45 nC), and mounting-base–referenced safe operating area - all essential for thermal design, drive circuit sizing, and ruggedness validation.

Technical Context

This device uses NXP's TrenchMOS technology to achieve low R_DS(on) while maintaining logic-level gate drive compatibility (V_GS(th) = 1–2 V typ). Its gate threshold voltage remains stable across -55 °C to 175 °C, enabling reliable turn-on in wide-temperature industrial environments.

The integrated source-drain diode exhibits V_SD = 0.85–1.2 V at I_S = 25 A and fast reverse recovery (t_rr = 69 ns, Q_r = 72 nC), supporting synchronous rectification and freewheeling in hard-switched topologies without external diode supplementation.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base electrically connected to drain terminal and serves as primary thermal interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP110N6L-12 and IRF1405ZPBF, the PHB110NQ06LT offers optimal balance of low R_DS(on), low Q_G, and D2PAK thermal performance - making it preferred for space-constrained, medium-frequency (100–300 kHz), high-current industrial power stages requiring logic-level drive and robust avalanche behavior.

Availability

PHB110NQ06LT is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from authorized channels.

Supply support for PHB110NQ06LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-performance analog/power products.

The PHB110NQ06LT belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered for industrial and computing power conversion where low gate drive voltage, high current density, and rugged unclamped inductive switching capability are essential.

FAQ

What is the maximum continuous drain current rating for PHB110NQ06LT?

The PHB110NQ06LT is rated for 75 A continuous drain current at mounting base temperature (T_mb) = 25 °C, per its limiting values table. This rating assumes proper heatsinking via the mounting base and derates linearly with increasing T_mb, reaching zero at T_mb ≈ 100 °C. The device also supports 240 A peak drain current for pulses ≤10 µs under the same conditions.

Does PHB110NQ06LT support logic-level gate drive?

Yes, the PHB110NQ06LT is explicitly designed as a logic-level N-channel MOSFET. Its gate-source threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V at T_j = 25 °C, and it achieves full enhancement with V_GS ≥ 4.5 V - enabling direct drive from standard 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry.

What is the thermal resistance from junction to mounting base for PHB110NQ06LT?

The PHB110NQ06LT has a maximum thermal resistance from junction to mounting base (R_th(j-mb)) of 0.75 K/W, as specified in Table 5. This low value reflects the direct copper thermal path between the die and the exposed mounting base, allowing efficient heat transfer to an external heatsink or thermally conductive PCB layer.

Is PHB110NQ06LT suitable for avalanche operation?

Yes, the PHB110NQ06LT is rated for non-repetitive drain-source avalanche energy (E_DS(AL)S) of 280 mJ under defined test conditions (V_GS = 10 V, I_D = 75 A, V_sup ≤ 55 V, unclamped, t_p = 0.1 ms). This makes it suitable for inductive load switching applications like motor drives and solenoid control where transient overvoltage may occur.

What package type does PHB110NQ06LT use, and how is pin 2 configured?

The PHB110NQ06LT uses the D2PAK (SOT404) plastic surface-mount package. Pin 1 is Gate (G), Pin 2 is Drain (D) - but the datasheet explicitly states "It is not possible to make a connection to pin 2" due to internal cropping; the drain is instead accessed solely through the mounting base, which is electrically and thermally connected to the drain terminal.