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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PHB112N06T,118

Name: PHB112N06T,118
Brand: NXP Semiconductors
SKU: PHB112N06T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHB112N06T,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PHB112N06T,118.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

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Product details

Overview

PHB112N06T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 55 V V_DS, 75 A I_D (DC at T_mb = 25 °C), and 8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers high-current switching in high-efficiency SMPS primary-side switches and motor drive half-bridges.

For engineers reviewing the PHB112N06T datasheet, PHB112N06T pinout, PHB112N06T application, or PHB112N06T equivalent, key selection criteria include its 0.75 K/W junction-to-mounting-base thermal resistance, 87 nC total gate charge, avalanche energy rating of 360 mJ, and compatibility with 10 V gate drive in industrial DC-DC converters and UPS systems.

Technical Context

This device uses TrenchMOS™ technology to achieve low on-resistance and fast switching with controlled Miller charge (Q_gd = 29 nC). Its gate threshold voltage ranges from 2.0–4.0 V at 25 °C and drops to 1.0–? V at 175 °C, enabling robust turn-on under elevated temperature conditions.

The integrated source-drain diode supports synchronous rectification and freewheeling, with V_SD = 0.85–1.2 V at I_S = 25 A and reverse recovery time t_rr = 65 ns under specified dI/dt and bias conditions - critical for minimizing commutation losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in DC or repetitive pulse operation; defines upper limit for bus voltage in 48 V industrial SMPS.
R_DS(on)	7.2–8.0 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 50 A, supporting high-current, low-voltage output stages.
I_D (DC)	75 A @ T_mb = 25 °C - Sustained current capability when mounted on PCB with minimum copper footprint; derates to 52.5 A at T_mb = 100 °C.
E_AS	360 mJ - Non-repetitive avalanche energy rating under unclamped inductive load; allows safe operation during transient overcurrent events without external snubbers.
Q_g(tot)	87 nC - Total gate charge required for full turn-on; determines driver strength requirement and switching loss trade-off at 100 kHz+ frequencies.
R_th(j-mb)	0.75 K/W - Junction-to-mounting-base thermal resistance; enables >200 W power dissipation with modest heatsink interface (e.g., 1.5 K/W system R_th yields T_j ≈ 120 °C at 150 W).
t_r/t_f	94–141 ns / 80–112 ns - Rise/fall times under standardized test conditions; supports efficient hard switching up to ~500 kHz with appropriate gate drive.

Pinout & Package

SOT404 (D2-PAK) package features a single-ended surface-mount outline with three leads: Gate (pin 1), Drain (pin 2, internally connected to mounting base), and Source (pin 3). Pin 2 is not externally accessible - the drain is tied directly to the thermally conductive mounting base, which must be soldered to a large PCB copper area for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires ≥10 V for full enhancement; gate-source leakage ≤100 nA ensures low standby power in PWM controllers.
2	Drain (D)	High-side power node; electrically and thermally connected to mounting base; no external connection possible - must be routed via PCB copper pour.
3	Source (S)	Power return path and reference for gate drive; also serves as cathode of integrated body diode for freewheeling current.
Mounting Base	Drain (D)	Primary thermal path; provides low-inductance, low-resistance drain connection; must be soldered to ≥10 cm² 2-oz copper for rated P_tot.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 7.2 mΩ R_DS(on) in D2-PAK, reducing conduction loss by >30% vs. planar MOSFETs of comparable voltage rating.
Avalanche ruggedness	Rated for 360 mJ non-repetitive avalanche energy, allowing reliable operation during inductive turn-off transients without external clamping.
Low Q_gd/Q_gs ratio	Miller charge Q_gd = 29 nC vs. Q_gs = 24 nC supports stable high-speed switching with reduced risk of shoot-through in bridge configurations.
Integrated body diode	V_SD = 0.85 V typical at 25 A enables efficient freewheeling in buck and half-bridge topologies without discrete diode replacement.
Thermal performance	R_th(j-mb) = 0.75 K/W allows >150 W continuous dissipation with standard PCB heatsinking - suitable for compact 1 kW SMPS designs.

Applications

Server PSU Primary Switch	Industrial Motor Drive Half-Bridge
Use Scenario: High-density 1U server power supply operating at 48 V input, delivering 800 W at 12 V output using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch handling 60 A peak drain current with 100 kHz PWM frequency and zero-voltage switching transitions. Use Value: 8 mΩ R_DS(on) limits conduction loss to <2.9 W at 60 A, while 87 nC Q_g enables clean 50 ns turn-on with 2 A gate driver - improving overall efficiency to >95.2%.	Use Scenario: 3-phase BLDC motor controller for HVAC compressors, rated for 220 V AC input and 5 kW mechanical output. IC Role / Device Role / Timing Role: Upper-leg power switch in 3-phase inverter leg, operated in six-step commutation with 20 kHz PWM carrier. Use Value: 360 mJ E_AS withstands inductive kickback during fault conditions; 0.75 K/W R_th(j-mb) maintains T_j < 135 °C under 45 A RMS load - eliminating need for forced-air cooling.
Uninterruptible Power Supply (UPS) Inverter	Telecom DC-DC Brick
Use Scenario: Online double-conversion UPS with 48 V battery bank and 230 V AC output, requiring bidirectional energy flow and high reliability. IC Role / Device Role / Timing Role: Bidirectional switch in H-bridge inverter stage, conducting both forward and reverse current during battery charging and discharging cycles. Use Value: Integrated source-drain diode with t_rr = 65 ns and Q_r = 0.17 µC minimizes reverse recovery loss during polarity reversal - extending battery runtime by ~3.1% versus discrete diode solutions.	Use Scenario: 48 V to 12 V isolated DC-DC converter module for 5G base station remote radio units, requiring high power density and low EMI. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, operating at 350 kHz with tight duty cycle control. Use Value: Low C_iss = 3264–4352 pF and C_rss = 389–533 pF reduce capacitive switching loss and improve EMI profile; 24 ns t_d(on) enables precise timing control for clamp capacitor reset.

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-density 1U server power supply operating at 48 V input, delivering 800 W at 12 V output using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch handling 60 A peak drain current with 100 kHz PWM frequency and zero-voltage switching transitions.

Use Value: 8 mΩ R_DS(on) limits conduction loss to <2.9 W at 60 A, while 87 nC Q_g enables clean 50 ns turn-on with 2 A gate driver - improving overall efficiency to >95.2%.

Use Scenario: 3-phase BLDC motor controller for HVAC compressors, rated for 220 V AC input and 5 kW mechanical output.

IC Role / Device Role / Timing Role: Upper-leg power switch in 3-phase inverter leg, operated in six-step commutation with 20 kHz PWM carrier.

Use Value: 360 mJ E_AS withstands inductive kickback during fault conditions; 0.75 K/W R_th(j-mb) maintains T_j < 135 °C under 45 A RMS load - eliminating need for forced-air cooling.

Uninterruptible Power Supply (UPS) Inverter

Telecom DC-DC Brick

Use Scenario: Online double-conversion UPS with 48 V battery bank and 230 V AC output, requiring bidirectional energy flow and high reliability.

IC Role / Device Role / Timing Role: Bidirectional switch in H-bridge inverter stage, conducting both forward and reverse current during battery charging and discharging cycles.

Use Value: Integrated source-drain diode with t_rr = 65 ns and Q_r = 0.17 µC minimizes reverse recovery loss during polarity reversal - extending battery runtime by ~3.1% versus discrete diode solutions.

Use Scenario: 48 V to 12 V isolated DC-DC converter module for 5G base station remote radio units, requiring high power density and low EMI.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, operating at 350 kHz with tight duty cycle control.

Use Value: Low C_iss = 3264–4352 pF and C_rss = 389–533 pF reduce capacitive switching loss and improve EMI profile; 24 ns t_d(on) enables precise timing control for clamp capacitor reset.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55M6	55 V V_DS, 110 A I_D, 5.5 mΩ R_DS(on), TO-220FP package, higher gate charge (120 nC)	Higher current rating but larger footprint and slower switching; better for lower-frequency, higher-current UPS inverters	Select when board space permits larger TO-220FP and peak current exceeds 75 A.
IRFB4115PBF	55 V V_DS, 115 A I_D, 6.5 mΩ R_DS(on), TO-220AB package, 105 nC Q_g, no published E_AS rating	Superior conduction performance but lacks documented avalanche ruggedness; unsuitable for unclamped inductive loads	Prefer only in well-clamped, low-dI/dt applications where avalanche stress is absent.

Compared with STP110N55M6 and IRFB4115PBF, PHB112N06T offers optimal balance of low R_DS(on), moderate gate charge, and verified 360 mJ avalanche capability in surface-mount D2-PAK - making it uniquely suited for compact, high-reliability 48–60 V industrial SMPS where thermal density and transient robustness are critical.

Availability

PHB112N06T is available at Aetrix Electronics and suitable for switched-mode power supplies, motor drives, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for PHB112N06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The PHB112N06T belongs to NXP's legacy TrenchMOS™ power MOSFET product line, designed specifically for high-efficiency, high-reliability industrial switching applications demanding low on-resistance, fast switching, and robust avalanche performance.

FAQ

What is the maximum continuous drain current rating for PHB112N06T at 100 °C mounting base temperature?

The PHB112N06T supports 52.5 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints of the SOT404 package and must be validated against actual PCB copper area and ambient conditions. The PHB112N06T datasheet Figure 2 confirms this normalized current derating curve.

Does PHB112N06T have a specified avalanche energy rating, and under what test conditions is it measured?

Yes, PHB112N06T has a non-repetitive avalanche energy rating of 360 mJ, measured under unclamped inductive load conditions: I_AS = 60 A, pulse width t_p = 0.1 ms, V_DD ≤25 V, R_GS = 50 Ω, V_GS = 5 V, and starting junction temperature T_j = 25 °C (Figure 4). This rating applies only to single-pulse events and does not imply repetitive avalanche capability.

Can PHB112N06T be used with gate drive voltages below 10 V, and what is its gate threshold voltage range?

PHB112N06T can operate with gate drive down to 5 V, but full enhancement requires ≥10 V for rated R_DS(on). Its gate-source threshold voltage V_GS(th) is 2.0–4.0 V at T_j = 25 °C and 1.0–? V at T_j = 175 °C (Table 5). Operation below 4.5 V risks incomplete turn-on and excessive conduction loss - the PHB112N06T is optimized for 10 V gate drive in production designs.

What is the thermal resistance from junction to mounting base for PHB112N06T, and how does it impact heatsinking requirements?

The PHB112N06T has R_th(j-mb) = 0.75 K/W (Table 4), meaning each watt dissipated raises junction temperature 0.75 °C above mounting base temperature. To maintain T_j ≤150 °C at 150 W dissipation, the mounting base must stay ≤37.5 °C above ambient - achievable with ≥10 cm² of 2-oz copper and minimal thermal interface resistance. This value is specific to the SOT404 package and confirmed in Figure 5.

Is PHB112N06T pin-compatible with PHP112N06T, and what is the key physical difference between them?

No, PHB112N06T and PHP112N06T are not pin-compatible. PHB112N06T uses SOT404 (D2-PAK) packaging with drain internally connected to the mounting base (pin 2 inaccessible), while PHP112N06T uses SOT78 (TO-220AB) with three fully accessible leads and drain connected to the metal tab. Their footprints, thermal paths, and assembly methods differ fundamentally - the PHB112N06T requires surface-mount reflow and PCB copper heatsinking, unlike the through-hole PHP112N06T.

PHB112N06T,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4352 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PHB112N06T,118 FAQ

1.How can I place an order for PHB112N06T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB112N06T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB112N06T,118 reliable?

The price and inventory of PHB112N06T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB112N06T,118 is usually 5 days.

3.What payment methods are accepted for PHB112N06T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB112N06T,118 transactions.

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PHB112N06T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB112N06T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB112N06T,118?

For technical support, including PHB112N06T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB112N06T,118 requirements.

6.How does Aetrix verify that PHB112N06T,118 is sourced from the original manufacturer or authorized distributors?

All PHB112N06T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB112N06T,118 meets industry standards.

7.What is the process for return or replacement of PHB112N06T,118?

All PHB112N06T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB112N06T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB112N06T,118 part is unused and in its original packaging.

Return procedure for PHB112N06T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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