NXP Semiconductors PHB119NQ06T,118

Overview

PHB119NQ06T from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 200 W total power dissipation. It delivers 5.8 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 25 A, T_j = 25 °C, and is qualified for computing, communications, consumer, and industrial applications including DC-DC converters and motor control.

For engineers reviewing the PHB119NQ06T datasheet, PHB119NQ06T pinout, PHB119NQ06T application, or PHB119NQ06T equivalent, key selection considerations include its standard-level gate drive compatibility (V_GS(th) = 2–4.4 V), low thermal resistance (R_th(j-mb) = 0.75 K/W), avalanche ruggedness (280 mJ), and source-drain diode performance (V_SD = 0.85 V typ at I_S = 25 A).

Technical Context

This device uses TrenchMOS technology to achieve low on-state resistance while maintaining robust switching behavior. Its gate threshold voltage ranges from 1 V at T_j = 175 °C to 4.4 V at T_j = −55 °C, enabling stable turn-on across wide temperature extremes. The 17 nC gate-drain charge (Q_GD) and 53 nC total gate charge (Q_G(tot)) support efficient high-frequency switching in hard-switched topologies.

The integrated source-drain diode exhibits 62 ns reverse recovery time (t_rr) and 60 nC recovered charge (Q_r) under defined test conditions, supporting synchronous rectification and freewheeling roles. Thermal design is facilitated by direct mounting-base thermal path with 0.75 K/W junction-to-mounting-base resistance, and the D2PAK package provides mechanical robustness for high-current PCB layouts.

Key Specifications

Pinout & Package

PHB119NQ06T is housed in a plastic single-ended surface-mounted D2PAK package (SOT404), featuring a large copper mounting base electrically connected to the drain terminal for enhanced thermal and current handling. Pin 2 is the drain and is internally connected to the mounting base; pin 1 is gate; pin 3 is source. No connection is possible to pin 2 beyond the mounting base interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N55F6 and IRF1404ZPBF, PHB119NQ06T offers optimal balance of 55 V rating, D2PAK thermal performance, and moderate gate charge for industrial 48 V power stages-making it preferable where mounting-base thermal path and standard-level drive are critical.

Availability

PHB119NQ06T is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PHB119NQ06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PHB119NQ06T belongs to NXP's TrenchMOS family of discrete power MOSFETs, engineered for high-efficiency, high-reliability power conversion in computing, communications, and industrial equipment where thermal robustness and avalanche tolerance are essential.

FAQ

What is the maximum continuous drain current rating for PHB119NQ06T?

The PHB119NQ06T is rated for 75 A continuous drain current at mounting base temperature (T_mb) of 25 °C, per its limiting values table. At elevated temperatures, derating applies-e.g., ~45 A at T_mb = 100 °C. This rating assumes proper heatsinking via the mounting base and accounts for thermal resistance R_th(j-mb) = 0.75 K/W. The PHB119NQ06T must not exceed this limit under steady-state conditions to ensure reliability.

Does PHB119NQ06T support standard 5 V or 10 V gate drive?

Yes, PHB119NQ06T is a standard-level MOSFET designed for gate drive voltages of 10 V, with V_GS(th) ranging from 2 V to 4.4 V across temperature. While it can turn on with 5 V drive, full enhancement and minimum R_DS(on) require ≥10 V. The PHB119NQ06T datasheet confirms R_DS(on) = 5.8 mΩ typ is specified at V_GS = 10 V, making it compatible with standard logic-level gate drivers and PWM ICs.

What is the thermal resistance from junction to mounting base for PHB119NQ06T?

The PHB119NQ06T has a maximum thermal resistance of R_th(j-mb) = 0.75 K/W from junction to mounting base, as specified in Table 5 of the datasheet. This low value reflects the direct copper path between the die and the exposed drain-connected mounting base in the D2PAK package. Effective heatsinking of the mounting base is essential to realize this thermal performance in the PHB119NQ06T's actual application.

Is PHB119NQ06T suitable for avalanche operation?

Yes, PHB119NQ06T is rated for non-repetitive drain-source avalanche energy of 280 mJ under defined test conditions (V_GS = 10 V, I_D = 75 A, V_sup ≤ 55 V, unclamped, t_p = 0.1 ms). This avalanche ruggedness is validated per JEDEC standards and makes the PHB119NQ06T suitable for inductive switching applications such as motor drives and DC-DC converters where voltage transients may occur. The PHB119NQ06T should not be operated repetitively in avalanche without additional analysis.

What package type does PHB119NQ06T use, and how is pin 2 configured?

The PHB119NQ06T uses the D2PAK package (SOT404), a plastic single-ended surface-mount package with three leads and an exposed mounting base. Pin 1 is gate, pin 2 is drain-and is internally connected to the mounting base-while pin 3 is source. As noted in the datasheet's pinning section, "It is not possible to make a connection to pin 2" beyond the mounting base interface; the PHB119NQ06T relies on soldering the base to a thermal pad for both electrical and thermal conduction.