NXP Semiconductors PHB11N06LT,118

Overview

PHB11N06LT,118 from NXP Semiconductors (formerly Philips) is an N-channel TrenchMOS™ logic-level power MOSFET in D2PAK (SOT404) package, rated for 55 V V_DSS, 10.3 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 130 mΩ at V_GS = 10 V - optimized for high-efficiency DC-DC converters and switched-mode power supplies.

For engineers reviewing the PHB11N06LT,118 datasheet, PHB11N06LT,118 pinout, PHB11N06LT,118 application, or PHB11N06LT,118 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low thermal resistance (R_{th j-mb} = 4.5 K/W), avalanche ruggedness (E_AS = 25 mJ), and surface-mount D2PAK footprint suitability for high-power density designs.

Technical Context

This device employs trench-gate technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g(tot) = 5.2 nC). Its gate threshold voltage (1.0–2.0 V at 25 °C) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers without level-shifting circuitry.

The integrated body diode supports synchronous rectification and flyback operation, with V_SD = 1.15–1.5 V at I_F = 10 A and t_rr = 35 ns - enabling efficient unidirectional current handling in buck and half-bridge topologies.

Key Specifications

Pinout & Package

PHB11N06LT,118 is housed in the SOT404 (D2PAK) surface-mount package. The tab is electrically connected to the drain terminal and serves as the primary thermal path to the PCB copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP12NK55ZFP and IRFZ44NPBF, PHB11N06LT,118 uniquely combines logic-level drive, D2PAK surface-mount packaging, and 4.5 K/W thermal resistance - making it optimal for compact, thermally constrained, microcontroller-driven power stages where gate drive simplicity and PCB real estate are critical.

Availability

PHB11N06LT,118 is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded OEM programs.

Supply support for PHB11N06LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.

The PHB11N06LT,118 belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion where low gate drive voltage, fast switching, and thermal performance are essential.

FAQ

What is the maximum continuous drain current rating for PHB11N06LT,118?

The PHB11N06LT,118 has a maximum continuous drain current (I_D) of 10.3 A at a mounting base temperature (T_mb) of 25 °C. This rating decreases to 7.3 A at T_mb = 100 °C, per its thermal derating curve. The device's R_{th j-mb} = 4.5 K/W enables effective heatsinking to sustain higher currents in well-designed layouts.

Is PHB11N06LT,118 a logic-level MOSFET and what does that mean for gate drive?

Yes, PHB11N06LT,118 is a logic-level MOSFET with a gate threshold voltage (V_GS(th)) of 1.0–2.0 V at 25 °C. This means it fully enhances and delivers rated R_DS(ON) with standard 3.3 V or 5 V logic outputs - eliminating the need for gate driver ICs or level shifters in microcontroller-based power stages using the PHB11N06LT,118.

What package type is used for PHB11N06LT,118 and how does it affect thermal performance?

PHB11N06LT,118 uses the SOT404 (D2PAK) surface-mount package, where the metal tab is internally connected to the drain and serves as the primary thermal interface. Its junction-to-mounting-base thermal resistance is 4.5 K/W - significantly lower than TO-220 alternatives - enabling efficient heat transfer to PCB copper or external heatsinks in high-power-density designs using PHB11N06LT,118.

Does PHB11N06LT,118 have avalanche capability and how is it specified?

Yes, PHB11N06LT,118 is rated for non-repetitive avalanche energy (E_AS) of 25 mJ under defined test conditions (unclamped inductive load, I_AS = 3.3 A, t_p = 220 µs, V_DD ≤ 25 V). This specification confirms its ability to withstand transient overvoltage events common in inductive switching applications without requiring external snubber networks when using PHB11N06LT,118.

What are the key gate charge parameters for PHB11N06LT,118 and why do they matter?

PHB11N06LT,118 has total gate charge (Q_g(tot)) = 5.2 nC, gate-source charge (Q_gs) = 1.2 nC, and Miller charge (Q_gd) = 3.0 nC at V_DD = 44 V and I_D = 10 A. These values directly impact switching speed and driver requirements: low Q_g reduces gate drive power, while low Q_gd/Q_gs ratio improves noise immunity in high-dV/dt environments using PHB11N06LT,118.