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NXP Semiconductors PHB143NQ04T,118
- Part No.:
- PHB143NQ04T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB143NQ04T,118.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,234
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Product details
Overview
PHB143NQ04T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in D2-PAK (SOT404) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 5.2 mΩ maximum RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-current, low-loss switching element in DC-DC converters, motor drives, and industrial power control circuits.
For engineers reviewing the PHB143NQ04T datasheet, PHB143NQ04T pinout, PHB143NQ04T application, or PHB143NQ04T equivalent, key selection criteria include its 40 V breakdown voltage, 75 A thermal-limited current capability, 0.75 K/W junction-to-mounting-base thermal resistance, and compatibility with standard-level gate drive (VGS(th) = 2–4 V).
Technical Context
This device uses TrenchMOS™ technology to achieve low on-state resistance and fast switching performance. Its gate threshold voltage (2–4 V at 25 °C) enables direct interface with 3.3 V and 5 V logic controllers without level-shifting circuitry.
The SOT404 (D2-PAK) package features a thermally optimized mounting base electrically connected to the drain, supporting high-power dissipation up to 200 W at Tmb = 25 °C. The device exhibits unclamped inductive avalanche energy rating of 475 mJ, confirming ruggedness in hard-switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines upper limit for DC bus or output stage voltage in buck converters and motor H-bridges. |
| ID (continuous) | 75 A at Tmb = 25 °C - Continuous current handling capacity under heatsink-mounted conditions; supports high-power load switching. |
| RDS(on) | ≤5.2 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss enabling <1.5 W I²R loss at 17 A, critical for efficiency in 12 V/24 V systems. |
| Qg(tot) | 52 nC - Total gate charge determines driver strength requirement; compatible with medium-speed gate drivers (e.g., TC442x, UCC3732x). |
| Rth(j-mb) | 0.75 K/W - Junction-to-mounting-base thermal resistance; allows precise thermal design when mounted to heatsink with known thermal interface resistance. |
| EAS | 475 mJ - Non-repetitive avalanche energy rating; supports reliable operation during inductive turn-off transients without external snubbers. |
Pinout & Package
The PHB143NQ04T is housed in a surface-mount D2-PAK (SOT404) package with three leads and an exposed mounting base electrically tied to the drain terminal. Pin 2 is not connected and must remain unconnected per datasheet note [1].
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires 10 V drive for full enhancement; threshold range 2–4 V enables TTL/CMOS compatibility. |
| 2 | No connection (NC) | Physically present but internally unconnected; must be left floating or omitted from PCB layout per datasheet instruction. |
| 3 | Source (S) | Power return path; referenced to system ground in low-side switch configurations; carries full load current. |
| Mounting base | Drain (D) | Electrically connected to drain; serves as primary heat transfer path to heatsink; must be isolated from other potentials unless drain-referenced cooling is intended. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 5.2 mΩ RDS(on) in D2-PAK, reducing conduction losses by >30% vs. planar MOSFETs of comparable rating. |
| Standard-level gate drive | VGS(th) = 2–4 V allows direct interfacing with microcontrollers and logic ICs without gate driver ICs in many 5 V systems. |
| Avalanche-rated | 475 mJ EAS ensures robustness against inductive kickback in relay/motor switching, eliminating need for external clamping diodes in many designs. |
| Thermally optimized package | 0.75 K/W Rth(j-mb) enables 200 W power dissipation with modest heatsinking-critical for space-constrained industrial power modules. |
Applications
| Motor Drive Systems | DC-DC Converters |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge driving brushed DC motors in industrial automation equipment. IC Role / Device Role / Timing Role: Low-side or high-side switching element controlling motor direction and speed via PWM. Use Value: 75 A current rating and 5.2 mΩ RDS(on) minimize I²R heating and enable compact thermal design at 24 V/30 A motor loads. |
Use Scenario: Primary synchronous rectifier or high-side switch in 12 V to 5 V/3.3 V buck converters for server PSUs and telecom power modules. IC Role / Device Role / Timing Role: Power switch operating at 200–500 kHz with fast turn-on/off times (15 ns td(on), 56 ns tf). Use Value: Low Qg (52 nC) and Ciss (2840 pF) reduce gate drive losses and improve efficiency at high switching frequencies. |
| Uninterruptible Power Supplies | Industrial Load Switching |
|
Use Scenario: Battery disconnect and inverter bridge switching in 24 V/48 V UPS systems with peak loads up to 60 A. IC Role / Device Role / Timing Role: Bidirectional power path switch and inverter output stage transistor. Use Value: Avalanche ruggedness (475 mJ) withstands battery reversal and line transients without failure, improving system reliability. |
Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, lamps, and heating elements in PLC I/O modules. IC Role / Device Role / Timing Role: High-current, low-voltage load switch with integrated body diode for freewheeling. Use Value: VSD = 0.85–1.2 V at 25 A enables efficient inductive load commutation without external flyback diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF40 | 40 V VDS, 75 A ID, 5.5 mΩ RDS(on), TO-220 package, higher Rth(j-a) (60 K/W) | Requires through-hole assembly and larger heatsink footprint; less suitable for surface-mount power modules. | Select when legacy TO-220 layout exists and board-level thermal management permits higher ambient rise. |
| IRF1404Z | 40 V VDS, 130 A ID, 4.7 mΩ RDS(on), TO-220 package, no avalanche rating specified | Higher current rating but lacks documented EAS; unsuitable for unclamped inductive switching without external protection. | Prefer only in low-inductance, soft-switched topologies where avalanche stress is absent. |
Compared with STP75NF40 and IRF1404Z, the PHB143NQ04T offers superior thermal performance in surface-mount form factor (0.75 K/W vs. ≥1.0 K/W), verified avalanche ruggedness, and pin-compatible D2-PAK footprint-making it optimal for space-constrained, high-reliability industrial power stages.
Availability
PHB143NQ04T is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for PHB143NQ04T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips Semiconductors' power electronics heritage.
The PHB143NQ04T belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for high-efficiency, high-current switching in industrial power conversion and motor control systems where thermal density and avalanche robustness are critical.
FAQ
What is the maximum continuous drain current rating for PHB143NQ04T?
The PHB143NQ04T supports 75 A continuous drain current when the mounting base temperature (Tmb) is maintained at 25 °C. At elevated temperatures-such as Tmb = 100 °C-the device still delivers 75 A, as confirmed in Table 3 of the datasheet. Derating applies beyond this point based on thermal resistance and heatsink performance.
Does PHB143NQ04T have avalanche capability, and how is it specified?
Yes, the PHB143NQ04T is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 475 mJ under defined test conditions: unclamped inductive load, ID = 69 A, tp = 0.27 ms, VDD ≤ 40 V, RGS = 50 Ω, VGS = 10 V, starting from Tj = 25 °C. This specification confirms ruggedness in real-world inductive switching events.
What is the gate threshold voltage range for PHB143NQ04T, and why does it matter?
The PHB143NQ04T has a gate-source threshold voltage (VGS(th)) of 2–4 V at Tj = 25 °C, with minimum 1 V at 175 °C. This standard-level threshold enables direct drive from 3.3 V and 5 V logic outputs, simplifying gate driver design and reducing bill-of-materials cost compared to logic-level or superjunction FETs requiring dedicated level shifters.
How is thermal performance characterized for PHB143NQ04T, and what does Rth(j-mb) = 0.75 K/W mean in practice?
The PHB143NQ04T specifies a maximum thermal resistance from junction to mounting base (Rth(j-mb)) of 0.75 K/W. In practice, this means that with a 200 W power dissipation and ideal heatsink interface, the junction temperature rise above mounting base temperature is ≤150 °C-enabling safe operation within the 175 °C max Tj limit when Tmb ≤ 25 °C.
Is pin 2 of PHB143NQ04T functional, and how should it be handled on the PCB?
No-pin 2 of the PHB143NQ04T in SOT404 (D2-PAK) package is explicitly marked "not possible to make connection" in the datasheet. It is an unconnected lead and must be left floating or omitted from the PCB footprint. Routing or soldering to pin 2 risks mechanical stress or unintended parasitic coupling and violates the manufacturer's pinning specification.
PHB143NQ04T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 52 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2840 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB143NQ04T,118 FAQ
1.How can I place an order for PHB143NQ04T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB143NQ04T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB143NQ04T,118 reliable?
The price and inventory of PHB143NQ04T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB143NQ04T,118 is usually 5 days.
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Once your PHB143NQ04T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB143NQ04T,118?
For technical support, including PHB143NQ04T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB143NQ04T,118 requirements.
6.How does Aetrix verify that PHB143NQ04T,118 is sourced from the original manufacturer or authorized distributors?
All PHB143NQ04T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB143NQ04T,118 meets industry standards.
7.What is the process for return or replacement of PHB143NQ04T,118?
All PHB143NQ04T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB143NQ04T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB143NQ04T,118 part is unused and in its original packaging.
Return procedure for PHB143NQ04T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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