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NXP Semiconductors PHB145NQ06T,118
- Part No.:
- PHB145NQ06T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB145NQ06T,118.pdf
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,716
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Product details
Overview
PHB145NQ06T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in a D2-PAK (SOT404) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 6 mΩ typical RDS(on) at VGS = 10 V. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems.
For engineers reviewing the PHB145NQ06T datasheet, PHB145NQ06T pinout, PHB145NQ06T application, or PHB145NQ06T equivalent, key selection considerations include its 0.6 K/W junction-to-mounting-base thermal resistance, avalanche energy rating of 560 mJ, gate threshold voltage range of 2–4 V at 25 °C, and compatibility with standard-level gate drive (10 V).
Technical Context
This MOSFET employs TrenchMOS™ technology to achieve low on-state resistance and robust switching performance. Its gate-source threshold voltage (2–4 V) enables direct interfacing with 5 V logic and microcontroller outputs without level-shifting, while its 55 V drain-source breakdown supports 48 V industrial bus and telecom applications.
The device features an integrated source-drain diode with 75 A DC forward current capability and 73 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 64.7 nC total gate charge and 19.6 nC Miller charge define drive strength requirements for efficient 100 kHz–500 kHz switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage; suitable for 48 V nominal systems with transient margin. |
| ID (DC) | 75 A at Tmb = 25 °C - Continuous current rating defined at mounting base temperature, not ambient. |
| RDS(on) | 5.1–6 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss enabling <1 W dissipation at 40 A. |
| EDS(ALT) | 560 mJ - Unclamped inductive avalanche energy; supports robust operation under short-circuit or inductive load turn-off. |
| Qg(tot) | 64.7 nC - Total gate charge determines required driver peak current for fast switching. |
| Rth(j-mb) | 0.6 K/W - Junction-to-mounting-base thermal resistance; enables high-power dissipation when mounted on heatsink. |
| VGS(th) | 2–4 V at Tj = 25 °C - Standard-level gate drive compatibility; avoids need for dedicated gate drivers in many MCU-based designs. |
Pinout & Package
PHB145NQ06T is housed in a plastic D2-PAK (SOT404) surface-mount package with three leads and an exposed mounting base electrically connected to the drain. Pin 2 is internally inaccessible and must remain unconnected per design.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≥10 V for full enhancement; gate-source leakage ≤100 nA ensures low standby power. |
| 2 | Drain (D) | Not accessible - physically cropped per SOT404 outline; no external connection possible. |
| 3 | Source (S) | Power return path; referenced to system ground; also serves as cathode of integrated body diode. |
| Mounting Base (MB) | Drain (D) | Electrically tied to drain; provides primary thermal path to heatsink; must be soldered to copper pour for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 6 mΩ RDS(on) in D2-PAK, reducing conduction losses by >30% vs. planar MOSFETs of same die size. |
| Standard-level gate drive | 2–4 V VGS(th) allows direct drive from 3.3 V/5 V MCUs without gate boosters or level shifters. |
| Avalanche-rated | 560 mJ non-repetitive EAS supports reliable operation during inductive load switching transients. |
| Integrated source-drain diode | 75 A DC forward current and 73 ns trr enable use in freewheeling and synchronous rectifier roles without external diode. |
| Low Qgd/Qg ratio | 19.6 nC Miller charge / 64.7 nC total charge = 0.30 - improves switching controllability and reduces risk of shoot-through. |
Applications
| Motor Control | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: H-bridge or half-bridge driving of 24–48 V brushed DC motors in industrial automation. IC Role / Device Role / Timing Role: High-side and/or low-side power switch controlling motor direction and speed via PWM. Use Value: 75 A current rating and 6 mΩ RDS(on) minimize I²R heating during stall conditions; avalanche rating protects against back-EMF spikes. | Use Scenario: Bidirectional DC-AC inverter stage and battery charging circuit in line-interactive UPS. IC Role / Device Role / Timing Role: Primary switching element in synchronous buck/boost and inverter legs. Use Value: 55 V VDS accommodates 48 V battery stack with headroom; 0.6 K/W Rth(j-mb) enables compact heatsinking in space-constrained enclosures. |
| DC-DC Converters | Industrial Load Switching |
Use Scenario: High-current step-down converter for server VRMs or telecom power modules delivering up to 60 A. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch operating at 200–500 kHz. Use Value: 64.7 nC Qg and 19.6 nC Qgd support efficient high-frequency switching with moderate gate driver power. | Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, lamps, or HVAC actuators in factory control panels. IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) electronic switch activated by PLC or microcontroller GPIO. Use Value: Standard-level gate drive simplifies interface; 250 W Ptot and 75 A ID allow handling of inrush currents up to 240 A (pulsed). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PBF | Higher RDS(on) (5.3 mΩ min vs. 5.1 mΩ typ), identical VDS/ID, TO-220 package instead of D2-PAK. | Requires larger PCB footprint and different thermal mounting; lacks integrated mounting base. | Select IRF1405PBF only if TO-220 mechanical fit or legacy inventory is required. |
| STP75NF75 | 75 V VDS (vs. 55 V), higher RDS(on) (8 mΩ typ), similar Qg (65 nC), same D2-PAK package. | Better voltage margin but lower efficiency at 48 V; may require derating for thermal performance. | Choose STP75NF75 when system transients exceed 55 V or when cross-supplier sourcing is mandated. |
Compared with IRF1405PBF and STP75NF75, PHB145NQ06T delivers the lowest RDS(on) in D2-PAK form factor, optimized thermal path via mounting base, and tighter VGS(th) distribution-making it preferred for high-efficiency, space-constrained 48 V industrial switching.
Availability
PHB145NQ06T is available at Aetrix Electronics and suitable for motor control, uninterruptible power supplies, and DC-DC converters requiring stable component supply across long-lifecycle industrial programs.
Supply support for PHB145NQ06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips Semiconductors' power electronics heritage.
PHB145NQ06T belongs to NXP's TrenchMOS™ standard-level power MOSFET product line, engineered for high-current, medium-voltage switching in industrial power conversion and motor drive systems where gate-drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current rating for PHB145NQ06T?
The PHB145NQ06T is rated for 75 A continuous drain current (ID) at mounting base temperature (Tmb) = 25 °C and VGS = 10 V. This rating drops with increasing Tmb; at Tmb = 100 °C, it remains 75 A due to thermal design optimization, but actual usable current depends on heatsink performance and layout.
Does PHB145NQ06T support gate drive from a 3.3 V microcontroller?
No-PHB145NQ06T has a gate-source threshold voltage (VGS(th)) of 2–4 V at 25 °C, but full enhancement requires VGS ≥10 V to achieve its specified 5.1–6 mΩ RDS(on). A 3.3 V MCU output cannot fully turn on PHB145NQ06T; a gate driver or level shifter is required for low-loss operation.
What is the purpose of the mounting base on the PHB145NQ06T package?
The mounting base on the PHB145NQ06T is electrically connected to the drain and serves as the primary thermal conduction path from the silicon die to the heatsink or PCB copper pour. With a specified Rth(j-mb) of 0.6 K/W, proper soldering of this base is essential to achieve the device's 250 W power dissipation capability and prevent thermal runaway.
Is PHB145NQ06T suitable for avalanche operation in inductive load circuits?
Yes-PHB145NQ06T is explicitly rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 560 mJ under defined test conditions (ID = 75 A, VDD ≤55 V, RGS = 50 Ω). This makes it suitable for controlled inductive turn-off events, though repetitive avalanche is not guaranteed and requires careful circuit design.
Can PHB145NQ06T replace a TO-220 MOSFET in an existing design?
PHB145NQ06T uses a D2-PAK (SOT404) package, not TO-220, so direct PCB footprint replacement is not possible without layout revision. However, its electrical specs (55 V, 75 A, 6 mΩ) are comparable to many TO-220 devices like IRF1405PBF; redesigning for D2-PAK offers superior thermal performance via the mounting base but requires new stencil and assembly validation.
PHB145NQ06T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 64.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3825 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB145NQ06T,118 FAQ
1.How can I place an order for PHB145NQ06T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB145NQ06T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB145NQ06T,118 reliable?
The price and inventory of PHB145NQ06T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB145NQ06T,118 is usually 5 days.
3.What payment methods are accepted for PHB145NQ06T,118?
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4.How is shipping managed for PHB145NQ06T,118?
PHB145NQ06T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB145NQ06T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB145NQ06T,118?
For technical support, including PHB145NQ06T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB145NQ06T,118 requirements.
6.How does Aetrix verify that PHB145NQ06T,118 is sourced from the original manufacturer or authorized distributors?
All PHB145NQ06T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB145NQ06T,118 meets industry standards.
7.What is the process for return or replacement of PHB145NQ06T,118?
All PHB145NQ06T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB145NQ06T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB145NQ06T,118 part is unused and in its original packaging.
Return procedure for PHB145NQ06T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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