NXP Semiconductors PHB146NQ06LT,118
- Part No.:
- PHB146NQ06LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB146NQ06LT,118.pdf
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:9,616
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Product details
Overview
PHB146NQ06LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET designed for high-current switching in DC-DC converters, motor drives, and UPS systems. It delivers 75 A continuous drain current at Tmb = 25 °C, 55 V drain-source breakdown voltage, and ultra-low 4.8 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C.
For engineers reviewing the PHB146NQ06LT datasheet, PHB146NQ06LT pinout, PHB146NQ06LT application, or PHB146NQ06LT equivalent, key selection considerations include its D2-PAK (SOT404) mounting-base thermal design, logic-level gate drive compatibility (VGS(th) = 1–2 V), avalanche ruggedness (560 mJ), and low Qg (60 nC) for efficient high-frequency switching.
Technical Context
This device employs TrenchMOS™ technology to achieve low on-resistance and fast switching with minimal gate charge. Its gate threshold voltage of 1–2 V at 25 °C enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.
The SOT404 package integrates the mounting base (MB) electrically connected to the drain, enabling low-impedance thermal path to heatsinks and supporting 250 W total power dissipation at Tmb = 25 °C. Its unclamped inductive avalanche rating of 560 mJ ensures robustness in hard-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 48 V bus and industrial DC systems. |
| ID (DC) | 75 A at Tmb = 25 °C - Supports high-power loads such as BLDC motor phases or UPS inverters. |
| RDS(on) | 4.8 mΩ typ. @ VGS = 10 V, Tj = 25 °C - Minimizes conduction loss (<0.28 W at 10 A) and thermal stress. |
| Qg(tot) | 60 nC - Enables efficient 100–500 kHz switching with moderate gate driver strength. |
| Rth(j-mb) | 0.6 K/W max - Allows direct heatsink mounting for high-power density thermal management. |
| VGS(th) | 1–2 V @ ID = 1 mA - Compatible with standard microcontroller GPIOs and low-voltage PWM drivers. |
| EAS | 560 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs. |
Pinout & Package
PHB146NQ06LT uses the SOT404 (D2-PAK) plastic surface-mount package with three terminals and an exposed metal mounting base electrically tied to the drain. Pin 2 is internally connected but not externally accessible per datasheet note [1]. The mounting base serves as both thermal interface and primary drain connection point.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; accepts logic-level voltages (3.3 V/5 V); requires <60 nC charge for full enhancement. |
| 2 | Drain (D) | Not externally accessible; internally connected to mounting base; carries full load current and heat. |
| 3 | Source (S) | Power return path; referenced for gate drive; forms low-inductance source loop with PCB layout. |
| Mounting Base (MB) | Drain (D) | Primary thermal and electrical connection to heatsink; must be soldered to copper pour for Rth(j-mb) ≤ 0.6 K/W. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct control from MCU I/O pins without external level shifters. |
| Low RDS(on) | 4.8 mΩ typical reduces conduction losses by >30% vs. comparable 55 V MOSFETs in 12–48 V systems. |
| Avalanche-rated | 560 mJ non-repetitive EAS supports reliable operation in inductive switching without snubbers. |
| Thermally optimized package | SOT404 mounting base provides 0.6 K/W junction-to-heatsink resistance for compact thermal design. |
| Fast switching | td(on)/tr/td(off)/tf = 37/95/177/106 ns at VDD = 30 V enables high-efficiency SMPS above 200 kHz. |
Applications
| Motor Drive Control | DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-current half-bridge phase leg in 24–48 V BLDC motor controllers. IC Role / Device Role / Timing Role: Power switch handling up to 75 A peak phase current with logic-level gate drive. Use Value: Low RDS(on) and fast switching minimize heat generation and enable compact heatsink sizing. |
Use Scenario: Primary-side synchronous rectifier or high-side switch in isolated 48 V input buck-boost converters. IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with low Qg and avalanche tolerance. Use Value: 60 nC gate charge and 560 mJ EAS reduce driver losses and improve reliability under transient overloads. |
| Uninterruptible Power Supply (UPS) | Industrial Solenoid/Lamp Driver |
|
Use Scenario: Inverter output stage in line-interactive UPS delivering 1–3 kVA AC output from 48 V DC bus. IC Role / Device Role / Timing Role: High-current, high-reliability switching element in H-bridge topology. Use Value: 250 W power dissipation rating and 0.6 K/W thermal resistance support sustained high-load operation. |
Use Scenario: Solid-state replacement for mechanical relays driving 24–48 V solenoids or halogen lamps in factory automation. IC Role / Device Role / Timing Role: Logic-compatible load switch with integrated body diode for freewheeling. Use Value: VSD = 0.8–1.2 V and trr = 64 ns ensure low-loss, low-noise turn-off in inductive load switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF55 | 55 V VDS, 75 A ID, RDS(on) = 8.5 mΩ @ 10 V - higher on-resistance, TO-220 package. | Larger footprint and higher thermal resistance (Rth(j-c) ≈ 1.0 K/W) limits power density. | Preferred where through-hole assembly or legacy TO-220 heatsinking is required. |
| IRF1404ZLPbF | 40 V VDS, 130 A ID, RDS(on) = 3.8 mΩ @ 10 V - lower voltage rating, larger die, TO-220AB. | Not suitable for 48 V bus systems due to 40 V rating; higher peak current capability irrelevant in 55 V designs. | Only viable if system voltage is strictly ≤40 V and board space allows TO-220 footprint. |
Compared with STP75NF55 and IRF1404ZLPbF, PHB146NQ06LT offers superior thermal performance via its SOT404 mounting base, tighter VGS(th) distribution (1–2 V), and verified 55 V avalanche capability-making it optimal for space-constrained, high-reliability 48 V industrial switching.
Availability
PHB146NQ06LT is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for PHB146NQ06LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.
PHB146NQ06LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for PHB146NQ06LT?
The PHB146NQ06LT is rated for 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C with VGS = 10 V. Derating applies above 25 °C: at Tmb = 100 °C, it maintains 75 A due to its thermal design, but actual usable current depends on heatsink performance and ambient conditions. Always verify junction temperature using Rth(j-mb) = 0.6 K/W.
Is PHB146NQ06LT compatible with 3.3 V microcontroller GPIOs?
Yes, PHB146NQ06LT has a logic-level gate threshold voltage (VGS(th)) of 1–2 V at 25 °C, allowing full enhancement with 3.3 V drive. At VGS = 4.5 V, RDS(on) remains low (≤6.4 mΩ), making it suitable for direct MCU control without gate drivers in medium-speed applications.
Does PHB146NQ06LT have avalanche capability, and how is it specified?
Yes, PHB146NQ06LT is fully specified for unclamped inductive avalanche with EAS = 560 mJ at ID = 75 A, VDD ≤55 V, and starting Tj = 25 °C. This rating is validated per JEDEC standards and supports robust operation in flyback, relay-driving, and hard-switched topologies without external snubbers.
What is the thermal resistance from junction to mounting base for PHB146NQ06LT?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHB146NQ06LT is 0.6 K/W, measured under standard test conditions. This value assumes proper soldering of the mounting base to a thermally optimized copper area on the PCB, enabling efficient heat transfer to an external heatsink.
Can PHB146NQ06LT replace older Philips MOSFETs like PHB133N04LT?
No-PHB133N04LT is a 40 V device with different RDS(on) and thermal characteristics. PHB146NQ06LT is a 55 V part with distinct pinout, avalanche rating, and gate charge profile. Direct substitution is not recommended without circuit revalidation, especially for voltage margin, switching timing, and thermal layout.
PHB146NQ06LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5675 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB146NQ06LT,118 FAQ
1.How can I place an order for PHB146NQ06LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB146NQ06LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that PHB146NQ06LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB146NQ06LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB146NQ06LT,118 meets industry standards.
7.What is the process for return or replacement of PHB146NQ06LT,118?
All PHB146NQ06LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB146NQ06LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB146NQ06LT,118 part is unused and in its original packaging.
Return procedure for PHB146NQ06LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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