Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors PHB146NQ06LT,118

Part No.:
PHB146NQ06LT,118
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixPHB146NQ06LT,118.pdf
Description:
MOSFET N-CH 55V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,616

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PHB146NQ06LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET designed for high-current switching in DC-DC converters, motor drives, and UPS systems. It delivers 75 A continuous drain current at Tmb = 25 °C, 55 V drain-source breakdown voltage, and ultra-low 4.8 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C.

For engineers reviewing the PHB146NQ06LT datasheet, PHB146NQ06LT pinout, PHB146NQ06LT application, or PHB146NQ06LT equivalent, key selection considerations include its D2-PAK (SOT404) mounting-base thermal design, logic-level gate drive compatibility (VGS(th) = 1–2 V), avalanche ruggedness (560 mJ), and low Qg (60 nC) for efficient high-frequency switching.

Technical Context

This device employs TrenchMOS™ technology to achieve low on-resistance and fast switching with minimal gate charge. Its gate threshold voltage of 1–2 V at 25 °C enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.

The SOT404 package integrates the mounting base (MB) electrically connected to the drain, enabling low-impedance thermal path to heatsinks and supporting 250 W total power dissipation at Tmb = 25 °C. Its unclamped inductive avalanche rating of 560 mJ ensures robustness in hard-switching topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 55 V - Maximum blocking voltage for 48 V bus and industrial DC systems.
ID (DC) 75 A at Tmb = 25 °C - Supports high-power loads such as BLDC motor phases or UPS inverters.
RDS(on) 4.8 mΩ typ. @ VGS = 10 V, Tj = 25 °C - Minimizes conduction loss (<0.28 W at 10 A) and thermal stress.
Qg(tot) 60 nC - Enables efficient 100–500 kHz switching with moderate gate driver strength.
Rth(j-mb) 0.6 K/W max - Allows direct heatsink mounting for high-power density thermal management.
VGS(th) 1–2 V @ ID = 1 mA - Compatible with standard microcontroller GPIOs and low-voltage PWM drivers.
EAS 560 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs.

Pinout & Package

PHB146NQ06LT uses the SOT404 (D2-PAK) plastic surface-mount package with three terminals and an exposed metal mounting base electrically tied to the drain. Pin 2 is internally connected but not externally accessible per datasheet note [1]. The mounting base serves as both thermal interface and primary drain connection point.

Pin/Terminal Circuit Role Design Meaning
1 Gate (G) Control input; accepts logic-level voltages (3.3 V/5 V); requires <60 nC charge for full enhancement.
2 Drain (D) Not externally accessible; internally connected to mounting base; carries full load current and heat.
3 Source (S) Power return path; referenced for gate drive; forms low-inductance source loop with PCB layout.
Mounting Base (MB) Drain (D) Primary thermal and electrical connection to heatsink; must be soldered to copper pour for Rth(j-mb) ≤ 0.6 K/W.

Key Features

Feature Design Value
Logic-level gate drive VGS(th) = 1–2 V enables direct control from MCU I/O pins without external level shifters.
Low RDS(on) 4.8 mΩ typical reduces conduction losses by >30% vs. comparable 55 V MOSFETs in 12–48 V systems.
Avalanche-rated 560 mJ non-repetitive EAS supports reliable operation in inductive switching without snubbers.
Thermally optimized package SOT404 mounting base provides 0.6 K/W junction-to-heatsink resistance for compact thermal design.
Fast switching td(on)/tr/td(off)/tf = 37/95/177/106 ns at VDD = 30 V enables high-efficiency SMPS above 200 kHz.

Applications

Motor Drive Control DC-DC Converter Primary Switch

Use Scenario: High-current half-bridge phase leg in 24–48 V BLDC motor controllers.

IC Role / Device Role / Timing Role: Power switch handling up to 75 A peak phase current with logic-level gate drive.

Use Value: Low RDS(on) and fast switching minimize heat generation and enable compact heatsink sizing.

Use Scenario: Primary-side synchronous rectifier or high-side switch in isolated 48 V input buck-boost converters.

IC Role / Device Role / Timing Role: Main power switch operating at 200–500 kHz with low Qg and avalanche tolerance.

Use Value: 60 nC gate charge and 560 mJ EAS reduce driver losses and improve reliability under transient overloads.

Uninterruptible Power Supply (UPS) Industrial Solenoid/Lamp Driver

Use Scenario: Inverter output stage in line-interactive UPS delivering 1–3 kVA AC output from 48 V DC bus.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element in H-bridge topology.

Use Value: 250 W power dissipation rating and 0.6 K/W thermal resistance support sustained high-load operation.

Use Scenario: Solid-state replacement for mechanical relays driving 24–48 V solenoids or halogen lamps in factory automation.

IC Role / Device Role / Timing Role: Logic-compatible load switch with integrated body diode for freewheeling.

Use Value: VSD = 0.8–1.2 V and trr = 64 ns ensure low-loss, low-noise turn-off in inductive load switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP75NF55 55 V VDS, 75 A ID, RDS(on) = 8.5 mΩ @ 10 V - higher on-resistance, TO-220 package. Larger footprint and higher thermal resistance (Rth(j-c) ≈ 1.0 K/W) limits power density. Preferred where through-hole assembly or legacy TO-220 heatsinking is required.
IRF1404ZLPbF 40 V VDS, 130 A ID, RDS(on) = 3.8 mΩ @ 10 V - lower voltage rating, larger die, TO-220AB. Not suitable for 48 V bus systems due to 40 V rating; higher peak current capability irrelevant in 55 V designs. Only viable if system voltage is strictly ≤40 V and board space allows TO-220 footprint.

Compared with STP75NF55 and IRF1404ZLPbF, PHB146NQ06LT offers superior thermal performance via its SOT404 mounting base, tighter VGS(th) distribution (1–2 V), and verified 55 V avalanche capability-making it optimal for space-constrained, high-reliability 48 V industrial switching.

Availability

PHB146NQ06LT is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for PHB146NQ06LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.

PHB146NQ06LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for PHB146NQ06LT?

The PHB146NQ06LT is rated for 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C with VGS = 10 V. Derating applies above 25 °C: at Tmb = 100 °C, it maintains 75 A due to its thermal design, but actual usable current depends on heatsink performance and ambient conditions. Always verify junction temperature using Rth(j-mb) = 0.6 K/W.

Is PHB146NQ06LT compatible with 3.3 V microcontroller GPIOs?

Yes, PHB146NQ06LT has a logic-level gate threshold voltage (VGS(th)) of 1–2 V at 25 °C, allowing full enhancement with 3.3 V drive. At VGS = 4.5 V, RDS(on) remains low (≤6.4 mΩ), making it suitable for direct MCU control without gate drivers in medium-speed applications.

Does PHB146NQ06LT have avalanche capability, and how is it specified?

Yes, PHB146NQ06LT is fully specified for unclamped inductive avalanche with EAS = 560 mJ at ID = 75 A, VDD ≤55 V, and starting Tj = 25 °C. This rating is validated per JEDEC standards and supports robust operation in flyback, relay-driving, and hard-switched topologies without external snubbers.

What is the thermal resistance from junction to mounting base for PHB146NQ06LT?

The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHB146NQ06LT is 0.6 K/W, measured under standard test conditions. This value assumes proper soldering of the mounting base to a thermally optimized copper area on the PCB, enabling efficient heat transfer to an external heatsink.

Can PHB146NQ06LT replace older Philips MOSFETs like PHB133N04LT?

No-PHB133N04LT is a 40 V device with different RDS(on) and thermal characteristics. PHB146NQ06LT is a 55 V part with distinct pinout, avalanche rating, and gate charge profile. Direct substitution is not recommended without circuit revalidation, especially for voltage margin, switching timing, and thermal layout.

PHB146NQ06LT,118 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
TrenchMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
5675 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
250W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

PHB146NQ06LT,118 FAQ

1.How can I place an order for PHB146NQ06LT,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB146NQ06LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB146NQ06LT,118 reliable?

The price and inventory of PHB146NQ06LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB146NQ06LT,118 is usually 5 days.

3.What payment methods are accepted for PHB146NQ06LT,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB146NQ06LT,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHB146NQ06LT,118?

PHB146NQ06LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB146NQ06LT,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB146NQ06LT,118?

For technical support, including PHB146NQ06LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB146NQ06LT,118 requirements.

6.How does Aetrix verify that PHB146NQ06LT,118 is sourced from the original manufacturer or authorized distributors?

All PHB146NQ06LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB146NQ06LT,118 meets industry standards.

7.What is the process for return or replacement of PHB146NQ06LT,118?

All PHB146NQ06LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB146NQ06LT,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB146NQ06LT,118 part is unused and in its original packaging.

Return procedure for PHB146NQ06LT,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PHB146NQ06LT,118 Tags

  • PHB146NQ06LT,118
  • PHB146NQ06LT,118 PDF
  • PHB146NQ06LT,118 Datasheet
  • PHB146NQ06LT,118 Specifications
  • PHB146NQ06LT,118 Images
  • NXP Semiconductors
  • NXP Semiconductors PHB146NQ06LT,118
  • Buy PHB146NQ06LT,118
  • PHB146NQ06LT,118 Price
  • PHB146NQ06LT,118 Distributor
  • PHB146NQ06LT,118 Supplier
  • PHB146NQ06LT,118 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER