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NXP Semiconductors PHB153NQ08LT,118
- Part No.:
- PHB153NQ08LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB153NQ08LT,118.pdf
- Description:
- MOSFET N-CH 75V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,552
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Product details
Overview
PHB153NQ08LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET in D2-PAK (SOT404) package, rated for 75 V VDS, 75 A ID (DC), and 5.5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-current switching element in DC-to-DC converters, motor drives, and uninterruptible power supplies.
For engineers reviewing the PHB153NQ08LT datasheet, PHB153NQ08LT pinout, PHB153NQ08LT application, or PHB153NQ08LT equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low on-resistance under 5 V gate bias, avalanche ruggedness (560 mJ), thermal resistance to mounting base (0.5 K/W), and surface-mount D2-PAK packaging with drain-connected mounting base.
Technical Context
This device uses TrenchMOS™ technology to achieve enhanced conduction efficiency and fast switching performance. Its logic-level threshold enables direct drive from 3.3 V or 5 V microcontrollers without gate drivers, while its 75 V breakdown voltage supports 48 V industrial bus and UPS input stages.
The SOT404 package features a large copper mounting base electrically connected to the drain, enabling efficient heat transfer to external heatsinks. The device exhibits robust unclamped inductive switching capability (EDS(AL)S = 560 mJ) and low gate charge (Qg(tot) = 95 nC), supporting high-frequency PWM operation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Supports 48 V nominal input systems with 50 % safety margin against transients. |
| RDS(on) @ VGS = 10 V | 4.7–5.5 mΩ - Enables <1.0 W conduction loss at 75 A, critical for high-efficiency power stages. |
| VGS(th) | 1.0–2.0 V @ Tj = 25 °C - Ensures reliable turn-on with standard logic-level MCU outputs. |
| Qg(tot) | 95 nC - Determines gate driver current requirement (~1.9 A peak for 50 ns rise time). |
| Rth(j-mb) | 0.5 K/W - Allows >250 W continuous dissipation with 50 °C temperature rise across mounting interface. |
| EDS(AL)S | 560 mJ - Withstands single-pulse inductive energy in relay or motor coil snubbing without failure. |
| ID (DC) | 75 A @ Tmb = 25 °C - Specifies maximum steady-state current with heatsink attached to mounting base. |
Pinout & Package
PHB153NQ08LT is housed in a plastic surface-mount D2-PAK (SOT404) package with three leads and a large copper mounting base electrically tied to the drain terminal. Pin 2 is internally connected to the mounting base and not accessible externally.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ≤±15 V rating; low input capacitance (Ciss = 8770 pF) eases driver design. |
| 2 | Drain (D) / Mounting Base | High-current power output and thermal path; electrically common; no external lead - soldered directly to PCB copper pour or heatsink. |
| 3 | Source (S) | Power return node; referenced for gate drive; carries full load current and diode reverse recovery charge (Qr = 176 nC). |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.0–2.0 V enables direct interfacing with 3.3 V/5 V MCUs and FPGAs without level-shifting. |
| Ultra-low RDS(on) | 5.5 mΩ max at 10 V ensures minimal I²R losses in high-current 12–48 V power conversion stages. |
| Avalanche-rated | 560 mJ non-repetitive EAS supports robust operation in inductive switching applications like solenoid control. |
| Thermally optimized package | 0.5 K/W Rth(j-mb) allows >250 W power handling with simple heatsinking - superior to TO-220 equivalents. |
| Low gate charge | 95 nC total gate charge reduces switching losses and eases selection of cost-effective gate drivers. |
Applications
| Motor Drive Stage | DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge driving brushed DC motors in industrial automation. IC Role / Device Role / Timing Role: Main power switch controlling motor direction and speed via PWM at 20–50 kHz. Use Value: Low RDS(on) minimizes conduction loss during 75 A stall current; logic-level gate simplifies MCU-integrated gate drive. |
Use Scenario: Primary-side synchronous rectifier or high-side switch in isolated 48 V input DC-DC converters. IC Role / Device Role / Timing Role: Fast-switching power transistor in forward or LLC topology operating up to 200 kHz. Use Value: 95 nC Qg and 116 ns fall time enable efficient high-frequency operation; 75 V rating covers 48 V + transient margin. |
| Uninterruptible Power Supply (UPS) | Industrial Solenoid Control |
|
Use Scenario: Bidirectional battery charging/discharging and inverter output stage in line-interactive UPS systems. IC Role / Device Role / Timing Role: High-current switching element in battery isolation and AC output H-bridge. Use Value: Avalanche ruggedness (560 mJ) handles inductive kickback from transformer leakage; 75 A rating supports 3 kVA output designs. |
Use Scenario: On/off control of high-power hydraulic or pneumatic solenoids in factory machinery. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays, switched at ≤10 Hz with controlled turn-on/turn-off. Use Value: VGS(th) ≤2 V ensures clean activation from PLC digital outputs; integrated source-drain diode (VSD = 0.8–1.2 V) suppresses back-EMF. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, RDS(on) = 10.5 mΩ @ 10 V; TO-220 package; higher RDS(on) and thermal resistance (Rth(j-c) = 0.9 K/W). | Requires larger heatsink and gate driver due to higher on-resistance and lower thermal efficiency. | Preferred where through-hole assembly or legacy TO-220 footprint is required; not drop-in for SOT404 layout. |
| IRF1404ZPBF | 40 V VDS, 180 A ID, RDS(on) = 3.8 mΩ @ 10 V; TO-220 package; lower voltage rating limits use to ≤24 V systems. | Not suitable for 48 V UPS or DC-DC inputs; better for low-voltage, ultra-high-current motor drives. | Select only for 12–24 V applications demanding sub-4 mΩ on-resistance; incompatible with 48 V+ designs. |
Compared with STP75NF75 and IRF1404ZPBF, PHB153NQ08LT uniquely balances 75 V rating, logic-level drive, D2-PAK thermal performance (0.5 K/W), and 5.5 mΩ on-resistance - making it optimal for space-constrained, high-efficiency 48 V industrial power stages where surface-mount thermal management is prioritized.
Availability
PHB153NQ08LT is available at Aetrix Electronics and suitable for motor drives, DC-to-DC converters, uninterruptible power supplies, and industrial solenoid control requiring stable component supply and long-term industrial lifecycle support.
Supply support for PHB153NQ08LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PHB153NQ08LT belongs to NXP's legacy TrenchMOS™ logic-level power MOSFET family, designed specifically for high-current, surface-mount switching in industrial power conversion and electromechanical control systems.
FAQ
What is the maximum continuous drain current for PHB153NQ08LT?
The PHB153NQ08LT supports 75 A continuous drain current (ID) when the mounting base temperature (Tmb) is maintained at 25 °C with adequate heatsinking. At Tmb = 100 °C, the device still sustains 75 A due to its low RDS(on) and thermal design - confirmed in Table 3 of the original Philips datasheet (Rev. 01, 2004). Derating applies above 100 °C.
Does PHB153NQ08LT have avalanche capability?
Yes, PHB153NQ08LT is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 560 mJ under specified test conditions: unclamped inductive load, ID = 75 A, tp = 0.15 ms, VDD ≤75 V, RGS = 50 Ω, VGS = 10 V, and starting junction temperature of 25 °C. This capability is documented in Table 3 of the official product data sheet.
What is the gate-source threshold voltage range for PHB153NQ08LT?
The gate-source threshold voltage (VGS(th)) for PHB153NQ08LT is specified as 1.0–2.0 V at Tj = 25 °C and ID = 1 mA, with a minimum of 0.5 V at Tj = 175 °C and a maximum of 2.2 V at Tj = −55 °C. This logic-level range ensures reliable turn-on from standard 3.3 V or 5 V digital outputs - verified in Table 5 of the Philips datasheet.
Is PHB153NQ08LT compatible with surface-mount reflow assembly?
Yes, PHB153NQ08LT is packaged in SOT404 (D2-PAK), a surface-mount outline explicitly qualified for reflow soldering per JEDEC standards. Its thermal pad (mounting base) must be soldered to a large PCB copper area for thermal performance. The datasheet confirms "plastic single-ended surface mounted package; 3 leads (one lead cropped)" - making PHB153NQ08LT suitable for automated SMT lines.
What is the thermal resistance from junction to mounting base for PHB153NQ08LT?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHB153NQ08LT is 0.5 K/W, as stated in Table 4 of the Philips product data sheet. This value is measured under specified test conditions and enables >250 W steady-state power dissipation with a 50 °C temperature rise across the mounting interface - critical for high-power industrial applications.
PHB153NQ08LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8770 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB153NQ08LT,118 FAQ
1.How can I place an order for PHB153NQ08LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB153NQ08LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB153NQ08LT,118 reliable?
The price and inventory of PHB153NQ08LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB153NQ08LT,118 is usually 5 days.
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Once your PHB153NQ08LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB153NQ08LT,118?
For technical support, including PHB153NQ08LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB153NQ08LT,118 requirements.
6.How does Aetrix verify that PHB153NQ08LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB153NQ08LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB153NQ08LT,118 meets industry standards.
7.What is the process for return or replacement of PHB153NQ08LT,118?
All PHB153NQ08LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB153NQ08LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB153NQ08LT,118 part is unused and in its original packaging.
Return procedure for PHB153NQ08LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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