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NXP Semiconductors PHB160NQ08T,118
- Part No.:
- PHB160NQ08T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB160NQ08T,118.pdf
- Description:
- MOSFET N-CH 75V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,765
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Product details
Overview
PHB160NQ08T from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, designed for high-current switching in DC-DC converters and industrial motor control. It delivers 75 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 4.8 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, enabling low conduction loss in high-efficiency power stages.
For engineers reviewing the PHB160NQ08T datasheet, PHB160NQ08T pinout, PHB160NQ08T application, or PHB160NQ08T equivalent, key selection considerations include its standard-level gate drive compatibility (VGS(th) = 2–4 V), avalanche ruggedness (560 mJ), and thermal resistance of 0.5 K/W from junction to mounting base - critical for thermally constrained industrial and UPS designs.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance and fast switching with QG(tot) = 91 nC and QGD = 28 nC at VDS = 60 V, ID = 25 A, and Tj = 25 °C. Its gate threshold voltage ranges from 1 V (Tj = 175 °C) to 4.4 V (Tj = −55 °C), supporting stable turn-on across wide temperature ranges.
The source-drain diode exhibits VSD = 0.81–1.2 V at IS = 25 A and Tj = 25 °C, with trr = 86 ns and Qr = 253 nC under specified conditions, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V and 60 V bus applications. |
| RDS(on) | 4.8 mΩ (typ) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 75 A, reducing heatsink requirements. |
| Ptot | 300 W at Tmb = 25 °C - High power handling supported by low Rth(j-mb) = 0.5 K/W for direct mounting to heatsinks. |
| QG(tot) | 91 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers (e.g., UCC27531). |
| td(on)/tf | 36 ns / 48 ns - Fast switching enables >100 kHz operation in DC-DC converters without excessive switching loss. |
| VGS(th) | 2–4 V at Tj = 25 °C - Standard-level threshold ensures reliable turn-on with 5 V or 10 V logic-compatible gate drive. |
| EDS(AL)S | 560 mJ - Unclamped avalanche energy rating supports robustness against inductive load transients in motor/solenoid drives. |
Pinout & Package
PHB160NQ08T is housed in a plastic single-ended surface-mounted D2PAK package (SOT404), featuring a large copper mounting base electrically connected to the drain terminal for enhanced thermal and electrical performance. The package has three leads (one cropped), with pin 2 inaccessible per design.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; requires 10 V drive for full enhancement; gate leakage ≤100 nA at ±20 V. |
| 2 | D (Drain) | Main high-side current path; internally connected to mounting base; rated for 75 V and 240 A pulsed. |
| 3 | S (Source) | Power return node; forms common reference for gate drive; supports 75 A continuous source current. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 4.8 mΩ typical at 25 °C enables <1.5 W conduction loss at 55 A, reducing thermal stress in compact power modules. |
| Standard-level gate drive | VGS(th) = 2–4 V allows direct interface with 5 V microcontrollers and PWM controllers without level-shifting circuitry. |
| Avalanche-rated | 560 mJ non-repetitive EDS(AL)S provides margin against inductive kickback in motor and solenoid switching. |
| Thermally optimized package | Rth(j-mb) = 0.5 K/W enables efficient heat transfer to external heatsink via mounting base, supporting high-power density designs. |
| Fast body diode | trr = 86 ns and Qr = 253 nC reduce reverse recovery losses in freewheeling and synchronous rectifier configurations. |
Applications
| DC-DC Converters | Industrial Motor Control |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter. IC Role / Device Role / Timing Role: High-current, high-duty-cycle power switch handling up to 75 A peak drain current. Use Value: Low RDS(on) and fast switching minimize conduction and transition losses, achieving >95% efficiency at full load. |
Use Scenario: H-bridge leg in 24–48 V brushed DC motor driver for factory automation. IC Role / Device Role / Timing Role: Power switching element controlling bidirectional current flow through motor windings. Use Value: Avalanche ruggedness and robust body diode support commutation spikes and regenerative braking without snubbers. |
| Uninterruptible Power Supplies | Lamp & Solenoid Drivers |
|
Use Scenario: Inverter stage switch in line-interactive UPS delivering 1–3 kVA output. IC Role / Device Role / Timing Role: High-reliability power switch operating continuously at elevated ambient temperatures. Use Value: Junction temperature rating up to 175 °C and stable RDS(on) over temperature ensure long-term reliability under thermal stress. |
Use Scenario: High-side load switch for 24 V incandescent lamps or 48 V solenoids in building control systems. IC Role / Device Role / Timing Role: Robust on/off controller handling inrush currents and inductive turn-off transients. Use Value: 240 A pulsed drain current rating and integrated avalanche capability eliminate need for external protection components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP160NF55 | 55 V VDS, 160 A ID, 3.7 mΩ RDS(on); TO-220 package, higher current but lower voltage rating. | Better suited for 24–36 V automotive or battery-powered systems where higher peak current is prioritized over 75 V margin. | Select when system bus voltage is ≤40 V and PCB layout accommodates TO-220 footprint and thermal management. |
| IRFP4668PBF | 75 V VDS, 110 A ID, 4.2 mΩ RDS(on); TO-247 package, lower RDS(on) but larger footprint and no integrated mounting base. | Preferred in high-power industrial inverters requiring >100 A continuous current and forced-air cooling. | Choose when thermal interface to heatsink is via screw-mount and board space permits TO-247 mechanical constraints. |
Compared with STP160NF55 and IRFP4668PBF, PHB160NQ08T offers optimal balance of 75 V rating, D2PAK thermal performance, and standard-level gate drive - making it uniquely suited for space-constrained, medium-power industrial DC-DC and motor control where mounting-base thermal coupling is essential.
Availability
PHB160NQ08T is available at Aetrix Electronics and suitable for DC-DC converters, uninterruptible power supplies, and industrial motor control applications requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for PHB160NQ08T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PHB160NQ08T belongs to NXP's TrenchMOS power MOSFET product line, engineered for high-efficiency, high-reliability switching in computing, communications, consumer, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for PHB160NQ08T?
The PHB160NQ08T supports 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C and VGS = 10 V. At Tmb = 100 °C, the rated current remains 75 A per Figure 1 in the datasheet, reflecting its robust thermal design and low Rth(j-mb) = 0.5 K/W. Derating applies above 100 °C.
Does PHB160NQ08T require a gate driver with negative voltage capability?
No - PHB160NQ08T is a standard-level N-channel MOSFET with VGS(th) = 2–4 V at 25 °C and absolute maximum VGS = ±20 V. It operates reliably with 0–10 V gate drive and does not require negative turn-off voltage; standard 5 V or 10 V logic-level drivers (e.g., TC4420) are fully compatible with PHB160NQ08T.
Can PHB160NQ08T be used in avalanche mode during normal operation?
Yes - PHB160NQ08T is rated for 560 mJ non-repetitive drain-source avalanche energy (EDS(AL)S) under defined test conditions. This specification validates its ability to safely absorb inductive energy during switching transitions in motor and solenoid applications, making PHB160NQ08T suitable for designs where clamping is not implemented.
What is the thermal resistance from junction to mounting base for PHB160NQ08T?
The PHB160NQ08T has a maximum thermal resistance of Rth(j-mb) = 0.5 K/W from junction to mounting base, measured under specified test conditions. This low value enables efficient heat transfer directly to an external heatsink via the exposed drain-connected mounting base, a key advantage of the D2PAK (SOT404) package used by PHB160NQ08T.
Is PHB160NQ08T pin-compatible with other D2PAK MOSFETs?
PHB160NQ08T uses the standard SOT404 (D2PAK) outline with pins 1 (G), 2 (D), and 3 (S), where pin 2 is internally connected to the mounting base and not externally accessible. While the physical footprint matches industry-standard D2PAK, pin compatibility with other devices depends on identical pin function mapping - always verify gate/drain/source assignments per datasheet before substitution of PHB160NQ08T.
PHB160NQ08T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 91 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5585 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB160NQ08T,118 FAQ
1.How can I place an order for PHB160NQ08T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB160NQ08T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB160NQ08T,118 reliable?
The price and inventory of PHB160NQ08T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB160NQ08T,118 is usually 5 days.
3.What payment methods are accepted for PHB160NQ08T,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB160NQ08T,118 transactions.
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4.How is shipping managed for PHB160NQ08T,118?
PHB160NQ08T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB160NQ08T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB160NQ08T,118?
For technical support, including PHB160NQ08T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB160NQ08T,118 requirements.
6.How does Aetrix verify that PHB160NQ08T,118 is sourced from the original manufacturer or authorized distributors?
All PHB160NQ08T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB160NQ08T,118 meets industry standards.
7.What is the process for return or replacement of PHB160NQ08T,118?
All PHB160NQ08T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB160NQ08T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB160NQ08T,118 part is unused and in its original packaging.
Return procedure for PHB160NQ08T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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