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NXP Semiconductors PHB174NQ04LT,118
- Part No.:
- PHB174NQ04LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB174NQ04LT,118.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,509
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Product details
Overview
PHB174NQ04LT from NXP Semiconductors (formerly Philips) is a logic-level N-channel TrenchMOS™ power MOSFET in D2-PAK (SOT404) package, rated for 40 V VDS, 75 A ID, and 4 mΩ RDS(on) at VGS = 10 V, designed for high-current DC-to-DC converters and motor drive stages where low gate drive voltage compatibility is required.
For engineers reviewing the PHB174NQ04LT datasheet, PHB174NQ04LT pinout, PHB174NQ04LT application, or PHB174NQ04LT equivalent, this page delivers verified electrical parameters, thermal resistance (Rth(j-mb) = 0.6 K/W), avalanche energy rating (560 mJ), gate charge (64 nC), and diode recovery characteristics - all critical for hard-switching and inductive load designs.
Technical Context
This device uses TrenchMOS™ technology to achieve low on-resistance with logic-level gate drive (VGS(th) = 1–2 V typ.), enabling direct interface with 3.3 V or 5 V microcontrollers without level-shifting. Its unclamped inductive avalanche ruggedness (560 mJ) supports robust operation in flyback and buck-boost topologies.
The SOT404 package features an isolated mounting base electrically connected to the drain, with pin 2 inaccessible - requiring PCB layout awareness. Thermal performance is optimized for heatsink mounting, delivering 250 W total power dissipation at Tmb = 25 °C and junction-to-mounting-base thermal resistance of 0.6 K/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines use in ≤40 V bus systems like 24 V industrial supplies or 36 V e-bike controllers. |
| RDS(on) | 3.6–4 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1.5 W conduction loss at 60 A, critical for high-efficiency power stages. |
| ID | 75 A DC - Continuous drain current rating at Tmb = 25 °C; derates to 75 A even at Tmb = 100 °C per datasheet Figure 2. |
| Qg(tot) | 64 nC - Total gate charge determines driver strength requirement; enables fast switching with moderate gate drivers (e.g., TC4427). |
| EAS | 560 mJ - Non-repetitive avalanche energy; allows safe operation during inductive turn-off transients without external snubbers. |
| VGS(th) | 1–2 V @ Tj = 25 °C - Logic-level threshold ensures full enhancement with 3.3 V or 5 V MCU GPIOs, eliminating need for gate boosters. |
| Rth(j-mb) | 0.6 K/W - Junction-to-mounting-base thermal resistance; enables high-power operation when mounted to heatsink with thermal interface material. |
Pinout & Package
PHB174NQ04LT is housed in a plastic surface-mount D2-PAK package (SOT404), featuring a large metal mounting base electrically tied to the drain terminal. Pin 2 is not accessible per datasheet note [1].
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ≤±15 V drive; low threshold (1–2 V) enables 3.3/5 V logic compatibility. |
| 2 | Drain (D) | Not accessible - internal connection only; drain is routed through mounting base (MB) for thermal and electrical conduction. |
| 3 | Source (S) | Power return path; referenced to gate drive ground; carries full load current and diode reverse recovery charge (Qr = 67 nC). |
| Mounting Base (MB) | Drain (D) | Electrically and thermally connected to drain; must be soldered to copper pour or heatsink; no isolation required. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interfacing with 3.3 V/5 V MCUs, reducing BOM count and layout complexity. |
| Ultra-low RDS(on) | 4 mΩ max at 10 V drive minimizes conduction losses in high-current paths, supporting >95% efficiency in 24–40 V DC-DC stages. |
| Avalanche-rated | 560 mJ unclamped inductive avalanche energy allows reliable operation under inductive switching stress without external protection. |
| Fast diode recovery | trr = 70 ns and Qr = 67 nC reduce switching losses and EMI in synchronous rectification and freewheeling applications. |
| Thermally optimized package | Rth(j-mb) = 0.6 K/W enables high-power dissipation with minimal temperature rise when mounted to heatsink or PCB copper. |
Applications
| Motor Drive Stages | DC-DC Converter Switches |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge motor control in industrial actuators and robotics. IC Role / Device Role / Timing Role: Main power switch handling bidirectional 60+ A peak currents with fast PWM switching. Use Value: Low RDS(on) reduces heat generation during continuous stall conditions; logic-level gate simplifies gate driver selection. |
Use Scenario: Primary-side switch in 24 V–40 V input buck, boost, or synchronous buck-boost converters. IC Role / Device Role / Timing Role: High-duty-cycle, high-frequency (≤200 kHz) power switch with low conduction and switching losses. Use Value: 64 nC Qg and 70 ns trr enable efficient hard-switching; avalanche rating protects against transformer leakage spikes. |
| Uninterruptible Power Supplies | Industrial Load Switching |
|
Use Scenario: Inverter stage and battery isolation in line-interactive UPS systems with 24/48 V battery banks. IC Role / Device Role / Timing Role: Bidirectional power switch managing AC output generation and battery charging paths. Use Value: 75 A DC rating supports high-output VA ratings; source-drain diode VSD = 0.85–1.2 V enables low-loss freewheeling. |
Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, lamps, and heating elements. IC Role / Device Role / Timing Role: High-reliability, zero-crossing-free load switch with fast turn-on/turn-off (td(on) = 44 ns, tf = 132 ns). Use Value: Logic-level drive eliminates auxiliary supply; avalanche ruggedness prevents failure during inductive load turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF40 | 40 V VDS, 75 A ID, but RDS(on) = 12 mΩ @ 10 V; TO-220 package; higher gate charge (120 nC). | Higher conduction loss and slower switching; suitable only where thermal margin exists and gate drive capability is ample. | Choose STP75NF40 only if TO-220 mechanical fit is mandatory and efficiency targets allow ≥3× higher RDS(on). |
| IRF1404Z | 40 V VDS, 130 A ID, RDS(on) = 4.7 mΩ @ 10 V; TO-220AB; Qg = 131 nC; no specified avalanche rating. | Higher current rating but larger gate drive demand and unverified avalanche capability limits reliability in inductive switching. | Select IRF1404Z only for non-avalanche-critical linear or low-frequency switching where peak current exceeds 75 A. |
Compared with STP75NF40 and IRF1404Z, PHB174NQ04LT offers superior combination of low RDS(on), low Qg, verified avalanche ruggedness, and logic-level drive - making it optimal for space-constrained, high-efficiency, and inductive-load-sensitive designs in D2-PAK footprint.
Availability
PHB174NQ04LT is available at Aetrix Electronics and suitable for motor drives, DC-to-DC converters, uninterruptible power supplies, and industrial load switching requiring stable component supply and long-term production continuity.
Supply support for PHB174NQ04LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.
The PHB174NQ04LT belongs to NXP's TrenchMOS™ logic-level power MOSFET family, engineered for high-current, low-voltage switching in industrial power conversion and motor control where gate drive simplicity and thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for PHB174NQ04LT at 100 °C mounting base temperature?
The PHB174NQ04LT supports 75 A continuous drain current (ID) at both Tmb = 25 °C and Tmb = 100 °C, as confirmed in Table 3 of the datasheet under "drain current (DC)" conditions. This flat derating profile reflects its robust thermal design and low RDS(on) stability across temperature.
Is PHB174NQ04LT compatible with 3.3 V microcontroller GPIOs for direct gate driving?
Yes, PHB174NQ04LT has a gate-source threshold voltage (VGS(th)) of 1–2 V at 25 °C, and remains fully enhanced at VGS = 4.5 V (RDS(on) ≤ 4.8 mΩ). This makes it directly drivable by 3.3 V or 5 V MCUs without level-shifting circuitry - a key advantage over standard MOSFETs requiring ≥10 V gate drive.
What is the thermal resistance from junction to mounting base for PHB174NQ04LT?
The PHB174NQ04LT has a maximum junction-to-mounting-base thermal resistance (Rth(j-mb)) of 0.6 K/W, as specified in Table 4. This value enables efficient heat transfer to an external heatsink or PCB copper area, supporting its 250 W total power dissipation rating at Tmb = 25 °C.
Does PHB174NQ04LT include an integrated body diode, and what are its key recovery specs?
Yes, PHB174NQ04LT integrates a source-drain body diode with forward voltage VSD = 0.85–1.2 V at IS = 25 A and reverse recovery time trr = 70 ns. Its recovered charge Qr is 67 nC, enabling low-loss freewheeling in synchronous rectifier and half-bridge configurations.
Can PHB174NQ04LT be used in avalanche-mode switching applications?
Yes, PHB174NQ04LT is explicitly rated for unclamped inductive avalanche with EAS = 560 mJ under defined test conditions (ID = 74 A, VDD ≤ 40 V, RGS = 50 Ω). This validated ruggedness supports reliable operation in flyback, LLC, and other topologies with significant leakage inductance.
PHB174NQ04LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5345 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB174NQ04LT,118 FAQ
1.How can I place an order for PHB174NQ04LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB174NQ04LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB174NQ04LT,118 reliable?
The price and inventory of PHB174NQ04LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB174NQ04LT,118 is usually 5 days.
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Once your PHB174NQ04LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB174NQ04LT,118?
For technical support, including PHB174NQ04LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB174NQ04LT,118 requirements.
6.How does Aetrix verify that PHB174NQ04LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB174NQ04LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB174NQ04LT,118 meets industry standards.
7.What is the process for return or replacement of PHB174NQ04LT,118?
All PHB174NQ04LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB174NQ04LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB174NQ04LT,118 part is unused and in its original packaging.
Return procedure for PHB174NQ04LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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