NXP Semiconductors PHB176NQ04T,118

Overview

PHB176NQ04T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in D2-PAK (SOT404) package, rated for 40 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 4.3 mΩ maximum R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-current, low-loss switching element in DC-DC converters, motor drives, and industrial power control circuits.

For engineers reviewing the PHB176NQ04T datasheet, PHB176NQ04T pinout, PHB176NQ04T application, or PHB176NQ04T equivalent, key selection criteria include its 0.6 K/W junction-to-mounting-base thermal resistance, avalanche energy rating of 560 mJ, gate threshold voltage range of 2–4 V at 25 °C, and compatibility with standard-level gate drive (10 V).

Technical Context

This device uses TrenchMOS™ technology to achieve low on-state resistance while maintaining robust avalanche ruggedness and fast switching performance. Its gate charge profile-68.9 nC total, with 22.2 nC Miller charge-supports efficient hard-switching in high-frequency power stages up to several hundred kHz.

The integrated source-drain diode exhibits 0.85–1.2 V forward voltage at 25 A and 68 ns reverse recovery time, enabling synchronous rectification or freewheeling in buck and half-bridge topologies without external diodes. Thermal design is anchored to the mounting base, with R_th(j-mb) ≤ 0.6 K/W and R_th(j-a) = 50 K/W when mounted on a minimum PCB footprint.

Key Specifications

Pinout & Package

PHB176NQ04T is housed in a plastic single-ended surface-mounted D2-PAK package (SOT404), featuring a large copper mounting base thermally and electrically connected to the drain terminal. Pin 2 is internally connected to the drain but not externally accessible - only pins 1 (gate), 3 (source), and the mounting base (drain) are functional terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF40 and IRF1404ZPBF, PHB176NQ04T offers superior thermal performance (0.6 K/W vs. ≥1.0 K/W), verified 560 mJ avalanche capability, and surface-mount D2-PAK packaging-making it optimal for space-constrained, high-reliability industrial power modules.

Availability

PHB176NQ04T is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and DC-DC converters requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PHB176NQ04T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PHB176NQ04T belongs to NXP's legacy TrenchMOS™ power MOSFET family, designed specifically for high-current, high-efficiency switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for PHB176NQ04T?

The PHB176NQ04T supports a continuous drain current of 75 A when the mounting base temperature (T_mb) is maintained at 25 °C. At T_mb = 100 °C, the device still delivers 75 A per the datasheet derating curve, enabled by its low R_DS(on) and 0.6 K/W thermal resistance to the mounting base. Actual usable current depends on PCB copper area, heatsinking, and ambient conditions.

Does PHB176NQ04T require a gate driver IC, or can it be driven directly from a microcontroller?

PHB176NQ04T can be driven directly from a 3.3 V or 5 V microcontroller GPIO in low-frequency switching applications (e.g., <1 kHz load switching), as its gate threshold voltage (V_GS(th)) ranges from 2–4 V. However, for PWM operation above 10 kHz or high-efficiency DC-DC conversion, a dedicated gate driver is recommended to deliver the 68.9 nC total gate charge quickly and minimize switching losses in the PHB176NQ04T.

What is the avalanche energy rating of PHB176NQ04T, and how is it tested?

The PHB176NQ04T has a non-repetitive drain-source avalanche energy rating (E_DS(AL)S) of 560 mJ, measured under unclamped inductive load conditions: ID = 75 A, tp = 0.29 ms, V_DD ≤ 40 V, R_GS = 50 Ω, V_GS = 10 V, starting at T_j = 25 °C. This rating validates its ability to absorb transient inductive energy without failure-critical for motor and solenoid drive reliability.

Is PHB176NQ04T pin-compatible with other D2-PAK MOSFETs like the STP75NF40?

No, PHB176NQ04T is not pin-compatible with STP75NF40. The PHB176NQ04T uses SOT404 (D2-PAK) with pin 2 internally connected and inaccessible, while STP75NF40 uses TO-220AB (SOT78) with three fully accessible leads. Their footprints, thermal interfaces, and pin assignments differ fundamentally-PCB redesign is required for substitution.

What is the typical reverse recovery time of the body diode in PHB176NQ04T?

The source-drain body diode in PHB176NQ04T has a typical reverse recovery time (t_rr) of 68 ns, measured at I_S = 20 A, dI_S/dt = −100 A/µs, and V_GS = 0 V. This fast recovery supports efficient synchronous rectification and reduces switching losses in buck and half-bridge topologies where the PHB176NQ04T operates as both switch and freewheeling element.