Nexperia USA Inc. PHB191NQ06LT,118

Overview

PHB191NQ06LT from NXP Semiconductors is a logic-level N-channel TrenchMOS power FET in D2PAK (SOT404) package, rated for 55 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 3.1 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and UPS systems where low gate-drive voltage compatibility and low conduction loss are critical.

For engineers reviewing the PHB191NQ06LT datasheet, PHB191NQ06LT pinout, PHB191NQ06LT application, or PHB191NQ06LT equivalent, key selection criteria include its 4.5 V logic-level gate threshold, 0.5 K/W junction-to-mounting-base thermal resistance, avalanche ruggedness (560 mJ), and suitability for industrial-grade 75 A switching loads with minimal heatsink dependency.

Technical Context

This device employs NXP's TrenchMOS technology to achieve low R_DS(on) while maintaining robust safe operating area (SOA) up to 240 A pulsed drain current and unclamped avalanche capability. Its gate threshold voltage ranges from 1.0 V (min) to 2.2 V (max) across temperature, enabling reliable turn-on with standard 3.3 V or 5 V logic controllers.

The integrated source-drain diode exhibits 0.79 V forward voltage at 25 A and 25 °C, with 78 ns reverse recovery time and 171 nC recovered charge-supporting synchronous rectification and freewheeling in hard-switched topologies without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: D2PAK (SOT404), plastic single-ended surface-mounted package with isolated mounting base electrically connected to drain. Dimensions per IEC JEDEC outline: 15.8 × 10.3 × 4.5 mm, with 2.54 mm lead pitch and cropped lead 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power FET applications.

Compared with STP75NF75 and IRF1405ZLPbF, PHB191NQ06LT delivers superior thermal efficiency (0.5 K/W vs. ≥1.2 K/W), lower gate drive demand (95.6 nC vs. ≥131 nC), and guaranteed avalanche ruggedness-making it optimal for compact, high-reliability industrial switching where thermal headroom and transient robustness are constrained.

Availability

PHB191NQ06LT is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, uninterruptible power supplies, and industrial load switching requiring stable component supply and long-term production continuity.

Supply support for PHB191NQ06LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

This device belongs to NXP's TrenchMOS logic-level power FET product line, engineered for high-current, low-voltage switching in space-constrained industrial power systems where gate drive simplicity and thermal performance are prioritized over ultra-high voltage ratings.

FAQ

What is the maximum continuous drain current for PHB191NQ06LT at 100 °C mounting base temperature?

The datasheet specifies 75 A continuous drain current at T_mb = 100 °C under V_GS = 10 V conditions (Table 4). Derating begins above this temperature, with normalized current dropping to ~65% at T_mb = 125 °C per Figure 1. No derated value is provided beyond 100 °C, so operation above that point requires thermal modeling or empirical validation.

Does PHB191NQ06LT have an avalanche-rated specification, and what does it cover?

Yes-PHB191NQ06LT is rated for 560 mJ non-repetitive drain-source avalanche energy (E_DS(AL)S) under defined test conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 75 A, V_sup ≤ 55 V, unclamped, R_GS = 50 Ω, pulse width ≤ 0.21 ms (Table 4). This confirms ruggedness against inductive switching transients in motor and solenoid applications.

Can PHB191NQ06LT be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

Yes-its gate threshold voltage is 1.0–2.0 V (typ) at 25 °C, and R_DS(on) remains ≤4.4 mΩ at V_GS = 4.5 V (Table 6). At 3.3 V, the device achieves partial enhancement with R_DS(on) ≈ 6–8 mΩ, sufficient for moderate-current (<30 A) switching; full 75 A capability requires ≥4.5 V gate drive.

What is the thermal resistance from junction to mounting base, and how should the mounting base be used in layout?

R_th(j-mb) is 0.5 K/W (Table 5), measured from silicon junction to the exposed metal mounting base. The mounting base is electrically connected to drain (Pin 2) and must be soldered to a large copper pour or heatsink with ≥10 cm² area and ≥2 oz copper thickness to realize this thermal performance. Thermal vias beneath the base are recommended for multilayer boards.