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NXP Semiconductors PHB193NQ06T,118
- Part No.:
- PHB193NQ06T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB193NQ06T,118.pdf
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,637
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Product details
Overview
PHB193NQ06T,118 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in D2-PAK (SOT404) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 4 mΩ typical RDS(on) at VGS = 10 V - used in high-current DC-to-DC converters and motor drive output stages.
For engineers reviewing the PHB193NQ06T,118 datasheet, PHB193NQ06T,118 pinout, PHB193NQ06T,118 application, or PHB193NQ06T,118 equivalent, key selection criteria include verified RDS(on) ≤4 mΩ at 25 °C, avalanche energy rating of 560 mJ, thermal resistance Rth(j-mb) ≤0.5 K/W, and compatibility with standard-level gate drive (VGS(th) = 2–4 V).
Technical Context
This device uses TrenchMOS™ technology to achieve low on-resistance and high current capability in a surface-mount D2-PAK package. Its standard-level gate threshold (2–4 V) enables direct interface with 5 V logic and microcontroller GPIOs without level-shifting.
The mounting base is internally connected to the drain, enabling efficient heatsinking. It features unclamped inductive avalanche ruggedness (560 mJ), source-drain diode recovery time of 95 ns, and total gate charge of 85.6 nC - supporting fast switching in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - maximum blocking voltage; suitable for 48 V bus systems and industrial DC supplies. |
| ID (continuous) | 75 A at Tmb = 25 °C - supports high-power load switching without forced air cooling when mounted on adequate heatsink. |
| RDS(on) | 3.4–4 mΩ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 50 A, critical for efficiency in DC-DC converters. |
| EAS | 560 mJ - non-repetitive avalanche energy rating confirms robustness against inductive turn-off transients in motor control. |
| Qg(tot) | 85.6 nC - determines gate driver power requirement; compatible with common 1–2 A peak gate drivers. |
| Rth(j-mb) | ≤0.5 K/W - junction-to-mounting-base thermal resistance enables >250 W dissipation with ΔT = 125 K, assuming proper heatsink interface. |
| VGS(th) | 2–4 V at Tj = 25 °C - standard-level threshold ensures reliable turn-on with 5 V logic, unlike logic-level FETs requiring ≤2.5 V. |
Pinout & Package
PHB193NQ06T,118 is housed in SOT404 (D2-PAK) plastic surface-mount package. The mounting base (MB) is electrically connected to the drain terminal and serves as primary thermal path. Pin 2 is not accessible - only pins 1 (gate), 3 (source), and the mounting base (drain) are functional terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ~86 nC total charge to fully enhance; standard-level threshold enables direct 5 V MCU drive. |
| 3 | Source (S) | Power return node; referenced to system ground in low-side switch configuration; carries full load current. |
| Mounting Base (MB) | Drain (D) | High-current power input; electrically tied to drain; must be soldered to copper pour or heatsink for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 4 mΩ RDS(on) in D2-PAK, reducing conduction losses vs. planar MOSFETs of same footprint. |
| Standard-level gate drive | VGS(th) = 2–4 V allows direct interface with 5 V microcontrollers and gate drivers without level shifters. |
| Drain-connected mounting base | Provides low-inductance, low-thermal-resistance path (<0.5 K/W) to heatsink - essential for high-current stability. |
| Unclamped avalanche rating | 560 mJ energy handling enables reliable operation in inductive switching applications without external snubbers. |
| Fast body diode | 95 ns reverse recovery time (trr) and 251 nC recovered charge support synchronous rectification and freewheeling in buck converters. |
Applications
| Motor Drive Output Stage | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Driving brushed DC motors up to 1 kW in industrial automation systems with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side N-channel power switch; handles bidirectional current during PWM commutation and regenerative braking. Use Value: 4 mΩ RDS(on) minimizes I²R heating at 75 A peak, while 560 mJ avalanche rating absorbs back-EMF spikes during abrupt current interruption. |
Use Scenario: High-efficiency 48 V to 12 V step-down converter in telecom power shelves operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch; controlled by dedicated gate driver with bootstrap supply. Use Value: 85.6 nC Qg enables fast turn-on/turn-off (td(on) = 23 ns, tf = 41 ns), reducing switching losses at high frequency. |
| Uninterruptible Power Supply (UPS) Inverter | Industrial Solenoid Driver |
|
Use Scenario: Half-bridge leg in 1 kVA online UPS delivering pure sine-wave AC output from 48 V battery bank. IC Role / Device Role / Timing Role: High-current switching element in H-bridge inverter stage; conducts 75 A pulsed current during 50/60 Hz modulation. Use Value: 240 A peak drain current (IDM) and 300 W Ptot support short-duration overload conditions without thermal runaway. |
Use Scenario: Driving 24 V/30 A solenoid valves in factory PLC-controlled hydraulic systems with rapid on/off cycling. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays; switched via optocoupled 5 V logic signal. Use Value: Standard-level VGS(th) ensures full enhancement with 5 V control, while low RDS(on) eliminates need for heat sinks in intermittent-duty applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF55 | RDS(on) = 8 mΩ (higher), VDS = 55 V, TO-220 package, no avalanche rating specified. | Lacks documented EAS rating; less suitable for inductive loads without snubbing. | Acceptable where lower cost outweighs avalanche robustness and higher conduction loss is tolerable. |
| IRF1404ZPBF | RDS(on) = 4.7 mΩ, VDS = 40 V, TO-220, EAS = 390 mJ (lower), Qg = 131 nC (higher). | Lower voltage rating limits use to ≤36 V systems; higher Qg increases gate drive demand. | Only suitable in 24 V or lower bus applications where gate drive capability exceeds 130 nC per cycle. |
Compared with STP75NF55 and IRF1404ZPBF, PHB193NQ06T,118 delivers superior combination of low RDS(on), high avalanche energy, and optimized gate charge - making it preferred for 48 V industrial switching where reliability under transient stress is critical.
Availability
PHB193NQ06T,118 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and DC-to-DC converters requiring stable component supply across long production lifecycles.
Supply support for PHB193NQ06T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in high-performance analog, logic, and power devices.
The PHB193NQ06T,118 belongs to NXP's legacy TrenchMOS™ power MOSFET family, designed specifically for high-current, medium-voltage industrial switching applications demanding low on-resistance and rugged avalanche performance.
FAQ
What is the gate threshold voltage range for PHB193NQ06T,118?
The gate-source threshold voltage (VGS(th)) for PHB193NQ06T,118 is specified as 2–4 V at Tj = 25 °C and ID = 1 mA. At elevated temperature (175 °C), it drops to 1 V minimum, ensuring turn-on remains reliable across full operating range. This standard-level threshold makes PHB193NQ06T,118 compatible with 5 V logic without gate voltage translation.
Does PHB193NQ06T,118 have avalanche capability, and how is it rated?
Yes, PHB193NQ06T,118 is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 560 mJ under defined test conditions: unclamped inductive load, ID = 75 A, tp = 0.21 ms, VDD ≤55 V, RGS = 50 Ω, VGS = 10 V, starting at Tj = 25 °C. This rating validates its use in inductive switching circuits like motor drives without external protection.
What is the thermal resistance from junction to mounting base for PHB193NQ06T,118?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHB193NQ06T,118 is 0.5 K/W, per datasheet Table 4. This value assumes proper soldering of the mounting base to a thermally conductive PCB copper area or heatsink. It enables >250 W steady-state power dissipation with a 125 K temperature rise, critical for high-current applications.
Can PHB193NQ06T,118 be used in synchronous rectification topologies?
Yes, PHB193NQ06T,118 supports synchronous rectification due to its fast body diode characteristics: reverse recovery time (trr) of 95 ns and recovered charge (Qr) of 251 nC at IS = 20 A. These parameters minimize switching losses and voltage overshoot during freewheeling in buck or LLC converters - confirmed in Figure 12 and Table 5 of the PHB193NQ06T,118 datasheet.
Is pin 2 usable on the PHB193NQ06T,118 SOT404 package?
No, pin 2 is not accessible on the PHB193NQ06T,118 in SOT404 (D2-PAK) package - as explicitly noted in the datasheet footnote "[1] It is not possible to make connection to pin 2 of the SOT404 package." Only pin 1 (gate), pin 3 (source), and the mounting base (drain) are electrically functional terminals.
PHB193NQ06T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 85.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5082 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB193NQ06T,118 FAQ
1.How can I place an order for PHB193NQ06T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB193NQ06T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB193NQ06T,118 reliable?
The price and inventory of PHB193NQ06T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB193NQ06T,118 is usually 5 days.
3.What payment methods are accepted for PHB193NQ06T,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB193NQ06T,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHB193NQ06T,118?
PHB193NQ06T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB193NQ06T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB193NQ06T,118?
For technical support, including PHB193NQ06T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB193NQ06T,118 requirements.
6.How does Aetrix verify that PHB193NQ06T,118 is sourced from the original manufacturer or authorized distributors?
All PHB193NQ06T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB193NQ06T,118 meets industry standards.
7.What is the process for return or replacement of PHB193NQ06T,118?
All PHB193NQ06T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB193NQ06T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB193NQ06T,118 part is unused and in its original packaging.
Return procedure for PHB193NQ06T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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