Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHB20N06T,118

Name: PHB20N06T,118
Brand: Nexperia USA Inc.
SKU: PHB20N06T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PHB20N06T,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PHB20N06T,118.pdf

Description:: MOSFET N-CH 55V 20.3A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,420

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PHB20N06T from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 55 V V_DS, 20.3 A continuous drain current at T_mb = 25 °C, and 62 W total power dissipation. It delivers low R_DS(on) of 64 mΩ (typ.) at V_GS = 10 V and T_j = 25 °C, enabling high-efficiency switching in DC-DC converters and SMPS primary-side power stages.

For engineers reviewing the PHB20N06T datasheet, PHB20N06T pinout, PHB20N06T application, or PHB20N06T equivalent, this device is selected for its fast switching (t_r = 50 ns, t_f = 40 ns), low gate charge (Q_G(tot) = 11 nC), and rugged avalanche energy rating (30.3 mJ), critical for reliable operation in hard-switched industrial power supplies.

Technical Context

This MOSFET employs TrenchMOS technology to achieve optimized conduction and switching trade-offs. Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at 25 °C, ensuring robust turn-on with standard 5 V or 10 V logic drivers while maintaining low leakage (I_DSS ≤ 10 µA at 25 °C).

Thermal design is supported by a low junction-to-mounting-base thermal resistance of 2.4 K/W, and its internal parasitic inductances (L_D = 2.5 nH, L_S = 7.5 nH) are specified for accurate layout modeling in high-frequency power circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V input systems with safety margin
I_D (continuous)	20.3 A at T_mb = 25 °C - Supports >100 W output in compact SMT power stages
R_DS(on)	64 mΩ (typ.) at V_GS = 10 V, T_j = 25 °C - Limits conduction loss to <0.13 W at 5 A load
Q_G(tot)	11 nC - Enables efficient 500 kHz switching with moderate gate driver strength
t_r/t_f	50 ns / 40 ns - Reduces switching transition losses in hard-switched topologies
E_AS	30.3 mJ - Withstands unclamped inductive switching events without failure
R_th(j-mb)	2.4 K/W - Allows direct heatsinking via mounting base for thermally constrained designs

Pinout & Package

PHB20N06T uses the SOT404 (D2PAK) plastic surface-mount package with isolated mounting base connected internally to the drain. Pin 2 is non-functional and cannot be connected.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; gate leakage <100 nA at ±20 V
2 (D)	Drain (non-connectable)	Internally tied to mounting base; no external connection possible per datasheet note [1]
3 (S)	Source	Power return path; referenced for gate drive; source inductance 7.5 nH impacts switching ring
Mounting Base (mb)	Drain (thermal & electrical)	Primary heat transfer path; electrically connected to drain; must be soldered to PCB copper pour

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	64 mΩ typ. enables use with standard logic-level gate drivers without level-shifting
TrenchMOS architecture	Delivers higher cell density and lower gate charge than planar MOSFETs of same voltage class
Avalanche-rated	30.3 mJ non-repetitive E_AS supports robustness in inductive load switching
Fast switching	10 ns t_d(on), 50 ns t_r, 70 ns t_d(off), 40 ns t_f reduce transition losses in high-frequency SMPS
Thermally optimized package	2.4 K/W R_th(j-mb) allows >40 W dissipation with minimal heatsink area on 2 oz copper

Applications

DC-DC Converters

Switched-Mode Power Supplies

Use Scenario: Step-down (buck) converter in telecom power modules delivering 12 V/10 A from 48 V input.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300 kHz with forced PWM control.

Use Value: 64 mΩ R_DS(on) limits I²R loss to 6.4 W at full load, reducing thermal stress on PCB copper.

Use Scenario: Secondary-side high-current OR-ing FET in redundant 24 V server PSUs.

IC Role / Device Role / Timing Role: Low-loss ideal diode replacement controlling forward conduction and reverse blocking.

Use Value: 0.85 V typical V_SD (body diode) and fast 32 ns t_rr minimize reverse recovery loss during current commutation.

Industrial Motor Drives

LED Driver Circuits

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 20 kHz PWM inverter stage.

Use Value: 81 A peak drain current (I_DM) supports 3× surge current during motor startup without derating.

Use Scenario: Constant-current buck controller for high-brightness LED arrays in street lighting.

IC Role / Device Role / Timing Role: Main power switch modulating average LED current at 1–5 kHz.

Use Value: 150 mΩ R_DS(on) at T_j = 175 °C ensures stable regulation across full ambient temperature range (-40 to +125 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 20 A I_D, TO-220FP package, R_DS(on) = 0.22 Ω - higher voltage, lower current, larger package	Designed for 400 V PFC stages, not optimized for 48 V DC-DC efficiency	Select only if higher breakdown voltage and through-hole mounting are required
IRFZ44NPBF	55 V V_DS, 49 A I_D, TO-220 package, R_DS(on) = 28 mΩ - lower R_DS(on), higher current, different thermal path	Lacks avalanche rating (E_AS not specified); unsuitable for unclamped inductive loads	Prefer for low-R_DS(on) needs in non-avalanche-critical linear or soft-switched designs

Compared with STP20NM50FP and IRFZ44NPBF, PHB20N06T offers superior thermal performance via D2PAK mounting base (2.4 K/W vs. ~3.5 K/W for TO-220), verified avalanche ruggedness, and tighter R_DS(on) tolerance-making it optimal for space-constrained, high-reliability 48 V industrial SMPS.

Availability

PHB20N06T is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for PHB20N06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

PHB20N06T belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and computing power conversion applications.

FAQ

Is PHB20N06T suitable for gate drive with 5 V microcontrollers?

No-its gate threshold voltage (V_GS(th)) is 2–4 V at 25 °C, but full enhancement requires ≥10 V to achieve 64 mΩ R_DS(on). At 5 V, R_DS(on) rises above 200 mΩ, increasing conduction loss significantly. A dedicated gate driver or level shifter is required for reliable operation.

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed 175 °C continuously. With R_th(j-mb) = 2.4 K/W and a mounting base temperature of 100 °C, the device can dissipate up to 29 W. Derating curves in Figure 2 confirm 14.3 A max current at T_mb = 100 °C, aligning with industrial thermal requirements.

Can PHB20N06T replace a TO-220 MOSFET in an existing design?

Yes, with PCB layout adaptation: the D2PAK (SOT404) footprint differs significantly from TO-220. The mounting base must be soldered to a large copper area for thermal performance, and pin 2 is non-functional-only pins 1 (G) and 3 (S) plus the base are used. Thermal simulation is recommended before substitution.

Does PHB20N06T include integrated ESD protection?

No-the datasheet specifies gate leakage (I_GSS) ≤100 nA at ±20 V but does not list human-body model (HBM) or charged-device model (CDM) ESD ratings. External gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp) is recommended for handling and board-level surge immunity.

PHB20N06T,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 20.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 483 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 62W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PHB20N06T,118 FAQ

1.How can I place an order for PHB20N06T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB20N06T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB20N06T,118 reliable?

The price and inventory of PHB20N06T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB20N06T,118 is usually 5 days.

3.What payment methods are accepted for PHB20N06T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB20N06T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHB20N06T,118?

PHB20N06T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB20N06T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB20N06T,118?

For technical support, including PHB20N06T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB20N06T,118 requirements.

6.How does Aetrix verify that PHB20N06T,118 is sourced from the original manufacturer or authorized distributors?

All PHB20N06T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB20N06T,118 meets industry standards.

7.What is the process for return or replacement of PHB20N06T,118?

All PHB20N06T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB20N06T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB20N06T,118 part is unused and in its original packaging.

Return procedure for PHB20N06T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…