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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHB20NQ20T,118

Name: PHB20NQ20T,118
Brand: Nexperia USA Inc.
SKU: PHB20NQ20T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHB20NQ20T,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PHB20NQ20T,118.pdf

Description:: MOSFET N-CH 200V 20A D2PAK

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Product details

Overview

PHB20NQ20T,118 from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 200 V V_DS, 20 A continuous drain current at T_mb = 25 °C, and 150 W total power dissipation. It delivers low R_DS(on) of 120 mΩ (typ.) at V_GS = 10 V and T_j = 25 °C, fast switching with Q_GD = 22 nC, and robust avalanche energy rating of 252 mJ - deployed in DC-DC converter primary-side switching stages.

For engineers reviewing the PHB20NQ20T,118 datasheet, PHB20NQ20T,118 pinout, PHB20NQ20T,118 application, or PHB20NQ20T,118 equivalent, key selection criteria include thermal resistance to mounting base (R_th(j-mb) = 1 K/W), gate charge profile (Q_G(tot) = 65 nC), safe operating area under pulsed inductive loads, and compatibility with high-frequency synchronous rectification topologies.

Technical Context

This device uses TrenchMOS technology to achieve low conduction losses and high switching efficiency in hard-switched topologies. Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at 25 °C and remains functional up to 175 °C junction temperature, enabling stable operation across industrial ambient conditions.

The integrated source-drain diode exhibits V_SD = 0.95–1.2 V at I_S = 20 A and T_j = 25 °C, with t_rr = 124 ns and Q_r = 0.74 µC - supporting moderate-frequency freewheeling in non-synchronous converters without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V AC rectified bus designs with 15% margin; suitable for 100–240 VAC input SMPS front ends.
I_D (continuous)	20 A at T_mb = 25 °C - enables 200–300 W isolated DC-DC stages with copper-clad PCB heatsinking.
R_DS(on)	120 mΩ (typ.) at V_GS = 10 V, T_j = 25 °C - yields ≤2.4 W conduction loss at 10 A, critical for thermal budget control.
Q_GD	22 nC - determines Miller plateau duration during turn-on/turn-off; enables <100 kHz hard-switched operation with <5.6 Ω gate drive.
R_th(j-mb)	1 K/W - allows direct mounting to heatsink via metal tab; achieves T_j ≤125 °C at 150 W P_tot with 100 °C heatsink.
E_AS	252 mJ (unclamped) - withstands single-pulse inductive energy spikes in flyback or forward converter primary switches.

Pinout & Package

Package: D2PAK (SOT404), plastic surface-mounted package with isolated mounting base connected internally to drain. Metal tab serves as both mechanical anchor and thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; gate leakage <100 nA ensures low bias current in high-impedance drive circuits.
2 (D)	Drain	Main high-side current path; electrically tied to mounting base; not externally accessible - used solely for thermal conduction.
3 (S)	Source	Reference node for gate drive and current sensing; internal source bond wire inductance (L_S = 7.5 nH) affects high-di/dt ringing in fast-switching layouts.

Key Features

Feature	Design Value
Low thermal resistance	R_th(j-mb) = 1 K/W enables direct heatsink coupling - reduces junction-to-heatsink ΔT by >50% vs. TO-220 equivalents.
TrenchMOS architecture	Delivers 120 mΩ R_DS(on) at 200 V rating - outperforms planar MOSFETs in specific on-resistance per voltage class.
Fast switching capability	t_d(on) = 15 ns, t_r = 46 ns, t_d(off) = 50 ns - supports >200 kHz PWM in LLC resonant converters with minimal dead-time penalty.
Avalanche ruggedness	E_AS = 252 mJ at T_j = 25 °C - eliminates need for snubbers in cost-sensitive flyback designs with unregulated input transients.

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–240 VAC input with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side main switch handling 12–18 A peak drain current at 100–150 kHz switching frequency.

Use Value: Low R_DS(on) and 1 K/W thermal resistance reduce conduction and thermal derating losses, enabling compact heatsink design without forced air.

Use Scenario: 3-phase inverter stage in HVAC blower drive with 400 V DC bus and 10–15 kHz PWM modulation.

IC Role / Device Role / Timing Role: Upper-leg N-channel switch in half-bridge configuration, driven by isolated gate driver with bootstrap supply.

Use Value: Fast turn-off (t_f = 38 ns) and low Q_GD minimize shoot-through risk during commutation, improving system reliability at elevated temperatures.

Telecom DC-DC Brick

Consumer Audio Amplifier PSU

Use Scenario: 48 V input to ±15 V/±5 V isolated DC-DC module for telecom line card power management.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped forward converter, operating at 250 kHz.

Use Value: Integrated body diode with t_rr = 124 ns and Q_r = 0.74 µC enables efficient self-driven synchronous rectification without external Schottky diodes.

Use Scenario: Class-D amplifier auxiliary SMPS supplying gate drivers and logic rails from 310 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck converter delivering 12 V @ 3 A with 500 kHz switching.

Use Value: Low C_iss = 2470 pF and C_rss = 90 pF reduce gate drive power consumption and EMI generation in audio-critical environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	R_DS(on) = 130 mΩ (typ.), R_th(j-mb) = 1.2 K/W, Q_GD = 25 nC - slightly higher conduction and switching losses.	Same D2PAK footprint but lower avalanche rating (E_AS = 190 mJ); less tolerant of unclamped inductive spikes.	Acceptable where board space and thermal margin allow minor efficiency trade-off; not recommended for flyback primary without snubber.
IRF640NPBF	R_DS(on) = 180 mΩ (typ.), R_th(j-mb) = 1.5 K/W, Q_GD = 39 nC - significantly higher switching and conduction losses.	TO-220 package limits thermal performance; lacks integrated avalanche rating documentation for repetitive stress.	Only suitable for low-frequency (<50 kHz), low-power (<100 W) legacy designs where D2PAK mounting is unavailable.

Compared with STP20NM20 and IRF640NPBF, PHB20NQ20T,118 provides superior thermal coupling, tighter R_DS(on) distribution, and documented single-pulse avalanche capability - making it the preferred choice for thermally constrained, high-reliability 200 V switching applications above 100 W.

Availability

PHB20NQ20T,118 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom DC-DC bricks requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for PHB20NQ20T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, computing, and consumer markets with ISO/TS 16949-certified manufacturing.

PHB20NQ20T,118 belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered for cost-effective, thermally efficient switching in non-automotive industrial and computing power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C, the maximum continuous drain current is 14 A, as specified in Table 4 (Limiting values). This derating reflects thermal constraints of the D2PAK package and must be applied when heatsink temperature exceeds 25 °C - verified by normalized ID curve in Figure 2 of the datasheet.

Is PHB20NQ20T,118 suitable for use in automotive applications?

No. The datasheet explicitly states this device is "designed and qualified for use in computing, communications, consumer and industrial applications only" and carries no AEC-Q101 qualification. Nexperia's legal disclaimers prohibit its use in safety-critical or automotive systems due to lack of automotive-grade testing and reliability validation.

How is the mounting base (drain tab) electrically isolated from other pins?

The mounting base is internally connected to the drain (pin 2) and is not electrically isolated - it forms part of the drain terminal. Pin 2 itself is inaccessible externally; the metal tab serves exclusively as a thermal interface and must be mounted to a grounded or drain-potential heatsink with appropriate insulation if required by system topology.

What gate resistor value is recommended for 100 kHz hard-switched operation?

A 5.6 Ω external gate resistor is validated in the datasheet (Table 6, td(on)/td(off) test condition) for stable 100 kHz operation with minimal ringing. This value balances switching speed (t_d(off) = 50 ns) against gate drive current demand and layout-induced oscillation - confirmed by measurement conditions in Figure 14's gate charge curve.

PHB20NQ20T,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PHB20NQ20T,118 FAQ

1.How can I place an order for PHB20NQ20T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB20NQ20T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB20NQ20T,118 reliable?

The price and inventory of PHB20NQ20T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB20NQ20T,118 is usually 5 days.

3.What payment methods are accepted for PHB20NQ20T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB20NQ20T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHB20NQ20T,118?

PHB20NQ20T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB20NQ20T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB20NQ20T,118?

For technical support, including PHB20NQ20T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB20NQ20T,118 requirements.

6.How does Aetrix verify that PHB20NQ20T,118 is sourced from the original manufacturer or authorized distributors?

All PHB20NQ20T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB20NQ20T,118 meets industry standards.

7.What is the process for return or replacement of PHB20NQ20T,118?

All PHB20NQ20T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB20NQ20T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB20NQ20T,118 part is unused and in its original packaging.

Return procedure for PHB20NQ20T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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