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NXP Semiconductors PHB222NQ04LT,118
- Part No.:
- PHB222NQ04LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB222NQ04LT,118.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,624
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Product details
Overview
PHB222NQ04LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET in D2-PAK (SOT404) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 25 °C, and RDS(on) ≤ 2.8 mΩ at VGS = 10 V - optimized for high-efficiency DC-to-DC converters and motor drive stages.
For engineers reviewing the PHB222NQ04LT datasheet, PHB222NQ04LT pinout, PHB222NQ04LT application, or PHB222NQ04LT equivalent, key selection criteria include low-threshold gate drive compatibility (VGS(th) = 1–2 V), avalanche ruggedness (560 mJ), thermal resistance to mounting base (Rth(j-mb) ≤ 0.5 K/W), and surface-mount D2-PAK packaging for high-power density designs.
Technical Context
This device uses TrenchMOS™ technology to achieve low on-resistance and fast switching with logic-level gate drive capability. Its gate threshold voltage range (1–2 V at 25 °C) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
The SOT404 package features an exposed mounting base electrically connected to the drain, enabling efficient heat transfer to heatsinks or PCB copper planes. Pin 2 is not connected - only pins 1 (gate), 3 (source), and the mounting base (drain) are functional terminals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - maximum drain-source blocking voltage; suitable for 24 V and 36 V industrial bus systems. |
| ID (continuous) | 75 A at Tmb = 25 °C - supports high-current load switching in motor drivers and UPS inverters. |
| RDS(on) | 2.4–2.8 mΩ at VGS = 10 V, Tj = 25 °C - minimizes conduction loss and junction heating in high-duty-cycle operation. |
| VGS(th) | 1–2 V at ID = 1 mA - ensures reliable turn-on with standard logic-level outputs (e.g., MCU GPIO, PWM controllers). |
| EAS | 560 mJ (unclamped inductive) - provides robustness against inductive kickback in relay/motor switching applications. |
| Rth(j-mb) | ≤ 0.5 K/W - enables high power dissipation (up to 300 W) with minimal temperature rise when mounted to heatsink. |
Pinout & Package
PHB222NQ04LT is housed in a plastic single-ended surface-mounted D2-PAK package (SOT404), featuring an exposed metal mounting base that serves as the drain terminal and primary thermal path. Pin 2 is not connected and must remain unconnected in layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control input; accepts logic-level voltages (3.3 V/5 V); low gate charge (93.6 nC total) enables fast switching with modest driver strength. |
| Pin 3 | Source (S) | Power return node; referenced to system ground in low-side switch configurations; connects to internal source metallization. |
| Mounting Base | Drain (D) | High-current output and primary thermal interface; electrically tied to drain; requires insulated mounting or direct heatsink contact per design requirements. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct control from 3.3 V/5 V MCUs without external level shifters or gate drivers. |
| Ultra-low RDS(on) | 2.4 mΩ typical at 10 V gate drive reduces I²R losses and improves efficiency in high-current DC-DC stages. |
| Avalanche-rated | 560 mJ non-repetitive energy rating protects against inductive transients in motor/solenoid loads without snubbers. |
| SOT404 surface-mount package | Enables automated assembly and high thermal performance via large copper pad connection to mounting base (drain). |
| TrenchMOS™ technology | Delivers superior cell density and lower gate charge vs. planar MOSFETs, improving switching efficiency at high frequencies. |
Applications
| Motor Drive Stage | DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge motor control in industrial actuators and robotic joints. IC Role / Device Role / Timing Role: Low-side or high-side power switch handling up to 75 A peak currents with fast turn-on/turn-off (td(on) = 68 ns, tf = 192 ns). Use Value: Low RDS(on) and logic-level drive reduce gate drive complexity and conduction losses, extending battery life and thermal margin. |
Use Scenario: Primary-side synchronous rectifier or high-side switch in 24 V–48 V isolated/non-isolated buck/forward converters. IC Role / Device Role / Timing Role: Power switching element operating at 100–500 kHz with low Qg (93.6 nC) and low Crss (610 pF) for reduced EMI and driver loss. Use Value: Avalanche ruggedness and low thermal resistance enable reliable operation under transient overloads and high ambient temperatures. |
| Uninterruptible Power Supply (UPS) | Industrial Solenoid/Lamp Driver |
|
Use Scenario: Inverter stage and battery-switching circuitry in line-interactive and online UPS systems. IC Role / Device Role / Timing Role: Bidirectional power switch managing AC output generation and battery charging paths with integrated body diode (VSD = 0.79–1.2 V). Use Value: High Ptot (300 W) and low Rth(j-mb) allow sustained high-power operation with passive or forced-air heatsinking. |
Use Scenario: Solid-state replacement for mechanical relays driving 24 V/48 V solenoids, LED arrays, or incandescent lamps in PLC I/O modules. IC Role / Device Role / Timing Role: General-purpose power switch controlled by industrial digital outputs (24 V logic or optocoupled signals). Use Value: Logic-level compatibility eliminates need for discrete transistor buffers; robust SOA supports repetitive surge currents up to 240 A (IDM). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, RDS(on) = 12.5 mΩ @ 10 V - higher voltage rating but significantly higher on-resistance. | Better suited for 48 V automotive or telecom systems where 40 V margin is insufficient. | Select STP75NF75 only if >40 V blocking is required; PHB222NQ04LT delivers superior efficiency below 40 V due to sub-3 mΩ RDS(on). |
| IRF1404ZPBF | 40 V VDS, 130 A ID, RDS(on) = 3.8 mΩ @ 10 V - higher current rating but higher RDS(on) and TO-220AB package. | Preferred where through-hole assembly or higher peak current (240 A) is prioritized over thermal density. | Choose IRF1404ZPBF for legacy TO-220 layouts or extreme peak-current needs; PHB222NQ04LT offers better thermal performance and surface-mount compatibility. |
Compared with STP75NF75 and IRF1404ZPBF, PHB222NQ04LT provides the lowest RDS(on) in its voltage class and optimal thermal resistance for compact, high-efficiency surface-mount power stages - making it preferred for space-constrained industrial DC-DC and motor control designs.
Availability
PHB222NQ04LT is available at Aetrix Electronics and suitable for motor drives, DC-to-DC converters, uninterruptible power supplies, and industrial solenoid/lamp drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHB222NQ04LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with deep expertise in automotive, industrial, and power management technologies.
The PHB222NQ04LT belongs to NXP's TrenchMOS™ logic-level power MOSFET family, engineered specifically for high-current, high-efficiency switching in industrial automation, power conversion, and embedded motor control systems.
FAQ
What is the gate threshold voltage range for PHB222NQ04LT?
The PHB222NQ04LT has a gate-source threshold voltage (VGS(th)) of 1–2 V at ID = 1 mA and Tj = 25 °C, with a minimum of 0.5 V at 175 °C. This logic-level characteristic allows direct drive from 3.3 V or 5 V microcontrollers without external level-shifting circuitry, simplifying gate driver design in the PHB222NQ04LT-based system.
Is PHB222NQ04LT suitable for surface-mount assembly?
Yes, PHB222NQ04LT uses the SOT404 (D2-PAK) package, a surface-mount plastic single-ended package with three leads (one cropped) and an exposed mounting base. It is designed for reflow soldering onto PCBs with appropriate thermal pads and meets IPC-A-610 Class 2/3 requirements when processed per NXP's recommended profile - confirming PHB222NQ04LT as a production-ready SMT solution.
What is the maximum continuous drain current for PHB222NQ04LT?
The PHB222NQ04LT supports a continuous drain current (ID) of 75 A at mounting base temperature (Tmb) = 25 °C and VGS = 10 V. Derating applies above 25 °C - e.g., 75 A remains valid up to Tmb = 100 °C per Figure 2 in the datasheet. This rating is confirmed in Table 3 (Limiting Values) and defines the PHB222NQ04LT's capability in sustained high-power switching applications.
Does PHB222NQ04LT have avalanche energy rating?
Yes, PHB222NQ04LT is rated for 560 mJ of non-repetitive drain-source avalanche energy (EDS(AL)S) under specified conditions: unclamped inductive load, ID = 75 A, tp = 0.29 ms, VDD ≤ 40 V, RGS = 50 Ω, VGS = 10 V, and starting Tj = 25 °C. This ruggedness specification makes PHB222NQ04LT suitable for inductive load switching without external protection components.
What is the thermal resistance from junction to mounting base for PHB222NQ04LT?
The PHB222NQ04LT has a maximum thermal resistance from junction to mounting base (Rth(j-mb)) of 0.5 K/W, as specified in Table 4. This low value enables efficient heat transfer from the silicon die to the heatsink or PCB copper plane, supporting its 300 W total power dissipation rating at Tmb = 25 °C - a critical parameter for thermal design of any PHB222NQ04LT implementation.
PHB222NQ04LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 93.6 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7880 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB222NQ04LT,118 FAQ
1.How can I place an order for PHB222NQ04LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB222NQ04LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB222NQ04LT,118 reliable?
The price and inventory of PHB222NQ04LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB222NQ04LT,118 is usually 5 days.
3.What payment methods are accepted for PHB222NQ04LT,118?
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4.How is shipping managed for PHB222NQ04LT,118?
PHB222NQ04LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB222NQ04LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB222NQ04LT,118?
For technical support, including PHB222NQ04LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB222NQ04LT,118 requirements.
6.How does Aetrix verify that PHB222NQ04LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB222NQ04LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB222NQ04LT,118 meets industry standards.
7.What is the process for return or replacement of PHB222NQ04LT,118?
All PHB222NQ04LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB222NQ04LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB222NQ04LT,118 part is unused and in its original packaging.
Return procedure for PHB222NQ04LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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