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NXP Semiconductors PHB225NQ04T,118
- Part No.:
- PHB225NQ04T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB225NQ04T,118.pdf
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,189
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Product details
Overview
PHB225NQ04T,118 from NXP Semiconductors (formerly Philips) is an N-channel TrenchMOS™ standard-level power MOSFET in D2-PAK (SOT404) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 3.1 mΩ typical RDS(on) at VGS = 10 V - deployed in high-current DC-DC converters and motor drive stages.
For engineers reviewing the PHB225NQ04T,118 datasheet, PHB225NQ04T,118 pinout, PHB225NQ04T,118 application, or PHB225NQ04T,118 equivalent, key selection criteria include low RDS(on) at 10 V gate drive, avalanche ruggedness (560 mJ), thermal resistance to mounting base (0.5 K/W), and compatibility with standard-level gate drivers in industrial power switching.
Technical Context
This MOSFET uses TrenchMOS™ technology to achieve low on-resistance and fast switching with standard gate drive (VGS(th) = 2–4 V). Its gate charge profile (Qg(tot) = 94 nC, Qgd = 29 nC) supports efficient hard-switching in synchronous rectification and half-bridge topologies.
The device integrates a robust body diode (VSD = 0.8–1.2 V at IS = 25 A, trr = 65 ns) and is rated for unclamped inductive switching up to 560 mJ, enabling reliable operation in flyback and buck-boost converters without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 48 V telecom/industrial rails. |
| ID (continuous) | 75 A at Tmb = 25 °C - Supports high-current output stages without forced air cooling when mounted on heatsink. |
| RDS(on) | 2.6–3.1 mΩ at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 50 A, critical for efficiency in 12–48 V power supplies. |
| Qg(tot) | 94 nC - Determines gate driver power requirement; enables ~100 kHz switching with moderate gate resistance. |
| Rth(j-mb) | 0.5 K/W - Junction-to-mounting-base thermal resistance allows direct heatsink attachment with minimal thermal interface resistance. |
| EAS | 560 mJ - Non-repetitive avalanche energy rating supports robustness against inductive turn-off transients in motor control. |
Pinout & Package
PHB225NQ04T,118 is housed in a surface-mount D2-PAK (SOT404) package with three leads: Gate (pin 1), Drain (pin 2 - internally connected to mounting base, not externally accessible), and Source (pin 3). The mounting base (MB) is electrically tied to the drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal requiring 10 V for full enhancement; threshold voltage 2–4 V enables standard logic-level drive. |
| 2 | Drain (D) | High-side power node; internally bonded to mounting base - no external connection possible per datasheet note [1]. |
| 3 | Source (S) | Power return path and reference for gate drive; forms common node with body diode cathode. |
| Mounting Base (MB) | Drain (D) | Primary thermal interface and electrical connection to drain; must be soldered to copper pour or heatsink for rated performance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 3.1 mΩ RDS(on) in D2-PAK, reducing conduction losses vs planar MOSFETs of same footprint. |
| Standard-level gate drive | VGS(th) = 2–4 V ensures compatibility with 5 V or 10 V microcontroller outputs and dedicated gate drivers. |
| Avalanche-rated | 560 mJ EAS permits safe operation under inductive load switching without external clamping components. |
| Low Qgd/Qg ratio | 29 nC / 94 nC = 31% - Improves hard-switching efficiency and reduces Miller-induced shoot-through risk in bridge circuits. |
| Body diode with fast recovery | trr = 65 ns and Qr = 100 nC enable use in synchronous rectifier or freewheeling roles with minimal reverse recovery loss. |
Applications
| Motor Drive Stages | DC-DC Converters |
|---|---|
Use Scenario: High-current H-bridge or half-bridge driver for 24–48 V brushed DC motors in industrial automation. IC Role / Device Role / Timing Role: Power switch controlling motor direction/speed via PWM; operates at 10–20 kHz with gate-driven timing. Use Value: Low RDS(on) minimizes I²R heating during stall conditions; avalanche rating protects against back-EMF spikes. |
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or active-clamp forward converter. IC Role / Device Role / Timing Role: Main power switch synchronized to controller's PWM signal; handles peak currents up to 75 A. Use Value: 0.5 K/W Rth(j-mb) enables stable thermal operation at full load without fan cooling; fast body diode aids snubberless design. |
| Uninterruptible Power Supplies | Industrial Load Switching |
Use Scenario: Inverter stage in line-interactive UPS delivering 1–3 kVA output with battery backup. IC Role / Device Role / Timing Role: Bridge leg switch in full-bridge inverter; commutated at 20–50 kHz with dead-time control. Use Value: 560 mJ avalanche energy withstands short-circuit events during transfer switching; low Qg reduces gate driver losses. |
Use Scenario: Solid-state replacement for electromechanical contactors controlling 40 A resistive/heating loads in factory equipment. IC Role / Device Role / Timing Role: High-side load switch activated by PLC output; operated in linear or saturated mode. Use Value: 75 A DC rating supports surge currents during cold-start; mounting base connection simplifies heatsinking in panel-mounted enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF40 | 40 V VDS, 75 A ID, RDS(on) = 5.5 mΩ @ 10 V - higher on-resistance, TO-220 package. | Requires larger PCB footprint and less efficient thermal path than SOT404; suitable where through-hole assembly is mandated. | Select when legacy TO-220 layout exists and 2.5 mΩ RDS(on) margin is acceptable. |
| IRF1404ZPBF | 40 V VDS, 200 A ID (pulsed), RDS(on) = 3.8 mΩ @ 10 V - higher Qg (133 nC), TO-220AB package. | Higher gate charge increases driver complexity; thermal resistance to ambient is 60 K/W vs PHB225NQ04T,118's 0.5 K/W to base. | Prefer when pulsed current capability >200 A is required and heatsink mounting is not feasible. |
Compared with STP75NF40 and IRF1404ZPBF, PHB225NQ04T,118 delivers superior thermal performance via its low Rth(j-mb) and optimized D2-PAK footprint, making it ideal for space-constrained, high-efficiency industrial power stages where mounting base thermal coupling is available.
Availability
PHB225NQ04T,118 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply across long-lifecycle industrial programs.
Supply support for PHB225NQ04T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, designs high-performance analog and power semiconductors for automotive, industrial, and consumer applications.
The PHB225NQ04T,118 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for high-current, medium-voltage switching in industrial power conversion and motor control where low RDS(on) and avalanche robustness are essential.
FAQ
What is the maximum continuous drain current rating for PHB225NQ04T,118?
The PHB225NQ04T,118 is rated for 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C with VGS = 10 V. Derating applies above 25 °C - e.g., 75 A remains valid up to Tmb = 100 °C per Figure 2 in the datasheet. This rating assumes proper heatsinking via the mounting base.
Does PHB225NQ04T,118 support gate drive from a 5 V microcontroller?
Yes - PHB225NQ04T,118 has a standard-level gate threshold voltage (VGS(th)) of 2–4 V at Tj = 25 °C, enabling partial enhancement with 5 V logic. However, full RDS(on) specification (≤3.1 mΩ) requires VGS = 10 V; for optimal efficiency, a 10 V gate driver is recommended.
What is the thermal resistance from junction to mounting base for PHB225NQ04T,118?
The PHB225NQ04T,118 has a maximum thermal resistance of Rth(j-mb) = 0.5 K/W from junction to mounting base, as specified in Table 4. This value assumes direct metal-to-metal contact between the device's mounting base and an adequately sized heatsink or PCB copper pour.
Is PHB225NQ04T,118 avalanche-rated, and what is its energy rating?
Yes - PHB225NQ04T,118 is fully avalanche-rated with a non-repetitive drain-source avalanche energy (EAS) of 560 mJ under specified test conditions (ID = 75 A, VDD ≤ 40 V, RGS = 50 Ω, starting at Tj = 25 °C). This rating supports reliability in inductive switching applications like motor drives and DC-DC converters.
What package type is used for PHB225NQ04T,118, and how are its pins configured?
PHB225NQ04T,118 uses the SOT404 (D2-PAK) surface-mount package. Pin 1 is Gate (G), Pin 2 is Drain (D) - internally connected to the mounting base and not externally accessible per datasheet note [1], and Pin 3 is Source (S). The mounting base is electrically and thermally tied to the drain.
PHB225NQ04T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 94 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB225NQ04T,118 FAQ
1.How can I place an order for PHB225NQ04T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB225NQ04T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB225NQ04T,118 reliable?
The price and inventory of PHB225NQ04T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB225NQ04T,118 is usually 5 days.
3.What payment methods are accepted for PHB225NQ04T,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB225NQ04T,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHB225NQ04T,118?
PHB225NQ04T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB225NQ04T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB225NQ04T,118?
For technical support, including PHB225NQ04T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB225NQ04T,118 requirements.
6.How does Aetrix verify that PHB225NQ04T,118 is sourced from the original manufacturer or authorized distributors?
All PHB225NQ04T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB225NQ04T,118 meets industry standards.
7.What is the process for return or replacement of PHB225NQ04T,118?
All PHB225NQ04T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB225NQ04T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB225NQ04T,118 part is unused and in its original packaging.
Return procedure for PHB225NQ04T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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