NXP Semiconductors PHB23NQ10LT,118

Overview

PHB23NQ10LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel enhancement-mode power MOSFET using TrenchMOS technology, designed for high-efficiency switching in DC-to-DC converters and switched-mode power supplies. It delivers V_DS = 100 V, I_D = 23 A at T_mb = 25 °C, R_DS(on) ≤ 72 mΩ at V_GS = 10 V, Q_GD = 9.3 nC (typ), and features an integrated source-drain diode with V_SD = 0.85 V at I_S = 10 A.

For engineers reviewing the PHB23NQ10LT datasheet, PHB23NQ10LT pinout, PHB23NQ10LT application, or PHB23NQ10LT equivalent, this device is selected for high-current, medium-voltage switching where low gate drive voltage (logic-level threshold), fast switching, and robust avalanche energy (100 mJ) are critical in industrial and power-conversion designs.

Technical Context

This MOSFET employs TrenchMOS architecture to achieve low R_DS(on) and optimized charge characteristics: Q_G(tot) = 49 nC, Q_GD = 9.3 nC, and C_iss = 1278–1704 pF at V_DS = 25 V. Its gate-source threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V at T_j = 25 °C, enabling direct drive from 3.3 V or 5 V logic controllers.

Thermal design centers on the mounting base (mb), with R_th(j-mb) = 1.5 K/W max and P_tot = 98 W at T_mb = 25 °C. The drain-connected mounting base serves as both thermal path and high-current return node, requiring careful PCB copper area planning per Figure 1 and Figure 4.

Key Specifications

Pinout & Package

PHB23NQ10LT uses the SOT404 (D2PAK) plastic surface-mount package with three leads (one lead cropped) and an exposed mounting base electrically connected to the drain. The mounting base must be soldered to a large copper pour for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP24N10F7 and IRF3205PBF, PHB23NQ10LT offers verified logic-level operation, documented 100 mJ avalanche capability, and D2PAK thermal performance-making it uniquely suited for space-constrained, 3.3 V–driven, high-reliability power conversion.

Availability

PHB23NQ10LT is available at Aetrix Electronics and suitable for DC-to-DC converters, switched-mode power supplies, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHB23NQ10LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.

The PHB23NQ10LT belongs to NXP's TrenchMOS logic-level power MOSFET family, engineered specifically for efficient, compact, and reliable switching in industrial power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for PHB23NQ10LT at 100 °C mounting base temperature?

The PHB23NQ10LT supports 16 A continuous drain current at T_mb = 100 °C with V_GS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits of the D2PAK package and mounting base interface; operation above this requires active cooling or reduced duty cycle. PHB23NQ10LT must be mounted on ≥250 mm² of 2-oz copper to achieve this rating.

Does PHB23NQ10LT have an integrated body diode, and what are its key parameters?

Yes, PHB23NQ10LT includes an integrated source-drain diode with V_SD = 0.85 V (typ) at I_S = 10 A and reverse recovery time t_rr = 6.3 ns (typ) at dI_S/dt = −100 A/µs. This diode supports freewheeling and synchronous rectification roles. PHB23NQ10LT's diode is optimized for fast recovery and low forward drop, reducing losses in buck and flyback topologies.

Can PHB23NQ10LT be driven directly from a 3.3 V microcontroller GPIO?

Yes, PHB23NQ10LT has a logic-level gate threshold (V_GS(th) = 1.0–2.0 V at T_j = 25 °C), ensuring full enhancement with 3.3 V drive. However, gate charge Q_G(tot) = 49 nC requires a driver capable of ≥1 A peak current to achieve fast switching; a dedicated gate driver IC is recommended for >100 kHz operation. PHB23NQ10LT's low V_GS(th) eliminates need for level shifters in most embedded control applications.

What is the thermal resistance from junction to mounting base for PHB23NQ10LT?

The maximum thermal resistance from junction to mounting base (R_th(j-mb)) for PHB23NQ10LT is 1.5 K/W, as stated in Table 4. This value assumes optimal soldering of the mounting base to a large copper area; actual performance depends on PCB layout and heatsink interface. PHB23NQ10LT's thermal path is engineered for direct conduction into the board, making R_th(j-mb) the dominant thermal metric-not R_th(j-a).

Is PHB23NQ10LT avalanche-rated, and what is its rated energy?

Yes, PHB23NQ10LT is fully avalanche-rated with a non-repetitive drain-source avalanche energy (E_DS(AL)S) of 100 mJ under unclamped inductive load conditions (I_D = 14.2 A, V_DS ≤ 25 V, R_GS = 50 Ω, V_GS = 5 V, T_j = 25 °C). This rating is tested and guaranteed per datasheet specifications, confirming PHB23NQ10LT's suitability for inductive switching applications without external snubbers.