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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHB27NQ10T,118

Name: PHB27NQ10T,118
Brand: Nexperia USA Inc.
SKU: PHB27NQ10T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHB27NQ10T,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PHB27NQ10T,118.pdf

Description:: MOSFET N-CH 100V 28A D2PAK

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Product details

Overview

PHB27NQ10T,118 from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 100 V V_DS, 28 A continuous drain current at T_mb = 25 °C, and 40–50 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and switched-mode power supplies in industrial and computing systems.

For engineers reviewing the PHB27NQ10T,118 datasheet, PHB27NQ10T,118 pinout, PHB27NQ10T,118 application, or PHB27NQ10T,118 equivalent, key selection criteria include thermal resistance (R_th(j-mb) = 1.4 K/W), avalanche ruggedness (E_AS = 128 mJ), gate charge profile (Q_GD = 12 nC), and mounting-base–referenced power dissipation capability.

Technical Context

This device employs TrenchMOS technology to achieve low R_DS(on) and high current density in a surface-mount D2PAK package with integrated mounting base connected to drain. Its gate threshold voltage (V_GS(th)) ranges from 1 V at T_j = 175 °C to 6 V at T_j = −55 °C, enabling robust turn-on control across wide temperature extremes.

The MOSFET supports unclamped inductive switching with non-repetitive avalanche energy rating of 128 mJ and peak avalanche current of 28 A. Dynamic parameters-including Q_G(tot) = 30 nC, C_iss = 1240 pF, and t_r/t_f = 43/24 ns-confirm suitability for high-frequency hard-switching topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; supports 48 V input bus designs with 2× safety margin.
I_D (continuous)	28 A at T_mb = 25 °C - Continuous current capability defined at mounting base temperature, not ambient.
R_DS(on)	40–50 mΩ @ V_GS = 10 V, I_D = 14 A, T_j = 25 °C - Low on-resistance enables <1.4 W conduction loss at 14 A.
Q_GD	12 nC - Gate-drain charge directly impacts Miller plateau duration and switching loss in hard-switched converters.
R_th(j-mb)	1.4 K/W - Junction-to-mounting-base thermal resistance enables high-power operation when soldered to copper heatsink area.
E_AS	128 mJ - Non-repetitive avalanche energy rating allows reliable operation under inductive load fault conditions.
C_iss	1240 pF - Input capacitance determines gate drive strength requirement and influences switching speed vs. EMI trade-off.

Pinout & Package

PHB27NQ10T,118 uses the SOT404 (D2PAK) plastic single-ended surface-mount package with three leads (one cropped) and an exposed metal mounting base electrically connected to the drain terminal. The package provides low thermal resistance and high power handling in compact footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≥10 V drive for full enhancement; threshold range 1–6 V across temperature.
2 (D)	Drain	Main high-side current path; internally bonded to mounting base for direct thermal coupling to PCB heatsink.
3 (S)	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.
Mounting base (mb)	Drain (tie)	Electrically and thermally tied to drain; must be soldered to large copper area for thermal performance and electrical integrity.

Key Features

Feature	Design Value
Low R_DS(on)	40–50 mΩ at 10 V drive enables <1.4 W conduction loss at 14 A, reducing thermal stress in high-current SMPS stages.
Fast switching	t_r = 43 ns / t_f = 24 ns supports >300 kHz switching frequencies while maintaining manageable gate drive losses.
Avalanche ruggedness	128 mJ E_AS and 28 A I_AS allow safe operation during transient overcurrent or inductive kick events without external snubbers.
Thermal efficiency	R_th(j-mb) = 1.4 K/W enables >100 W power dissipation with modest heatsinking-critical for space-constrained DC-DC modules.
TrenchMOS architecture	Optimized cell layout improves current density and reduces gate charge versus planar MOSFETs, enhancing overall figure-of-merit (R_DS(on) × Q_G).

Applications

Server VRMs

Industrial AC-DC Adapters

Use Scenario: High-current, multi-phase buck converters delivering 12 V/100+ A to CPU/GPU cores in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–500 kHz with tight duty-cycle control and low R_DS(on) critical for efficiency.

Use Value: 40 mΩ R_DS(on) and 1.4 K/W thermal resistance reduce conduction loss and junction temperature rise, extending reliability under sustained load.

Use Scenario: Primary-side switching in 300–500 W industrial AC-DC power supplies with universal input (90–264 VAC).

IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched MOSFET in flyback or LLC resonant converter primary stage.

Use Value: 100 V V_DS rating and 128 mJ avalanche energy ensure robustness against line surges and transformer leakage spikes.

Telecom DC-DC Modules

Motor Drive Half-Bridge Stages

Use Scenario: Intermediate bus converters (48 V → 12 V/5 V) in telecom base station power distribution units.

IC Role / Device Role / Timing Role: High-frequency synchronous FET in isolated or non-isolated buck topology, driven by dedicated gate driver IC.

Use Value: Low Q_GD (12 nC) and fast t_r/t_f minimize switching loss and improve light-load efficiency in burst-mode operation.

Use Scenario: Low-side switch in 24–48 V brushed DC motor drives for factory automation equipment.

IC Role / Device Role / Timing Role: PWM-controlled power switch handling bidirectional current during regenerative braking via internal body diode.

Use Value: V_SD = 0.9–1.2 V and Q_r = 160 nC enable efficient freewheeling with low reverse recovery loss and minimal voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP28NF10	100 V, 28 A, R_DS(on) = 45 mΩ, R_th(j-mb) = 1.6 K/W, Q_GD = 14 nC	Slightly higher thermal resistance and gate charge; less optimized for high-frequency SMPS	Preferred where legacy ST design compatibility or dual-sourcing is required; verify thermal margin at 28 A.
IRF3205	55 V, 110 A, R_DS(on) = 8 mΩ, R_th(j-mb) = 1.5 K/W, Q_GD = 45 nC	Lower voltage rating limits use to ≤24 V systems; higher Q_GD increases switching loss above 100 kHz	Only suitable for low-voltage, high-current applications (e.g., battery-powered motor drives); not a drop-in replacement for 100 V designs.

Compared with STP28NF10 and IRF3205, PHB27NQ10T,118 offers superior high-frequency efficiency due to lower Q_GD and better thermal coupling, making it optimal for 100 V-class SMPS above 200 kHz where switching loss dominates.

Availability

PHB27NQ10T,118 is available at Aetrix Electronics and suitable for server VRMs, industrial AC-DC adapters, and telecom DC-DC modules requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for PHB27NQ10T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, serving automotive, industrial, computing, and consumer markets with scalable manufacturing and rigorous quality standards.

PHB27NQ10T,118 belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for cost-sensitive, high-efficiency power conversion in non-automotive industrial and computing applications.

FAQ

What is the maximum continuous drain current for PHB27NQ10T,118?

The maximum continuous drain current is 28 A at mounting base temperature (T_mb) = 25 °C and V_GS = 10 V. At T_mb = 100 °C, it derates to 20 A. This rating assumes proper PCB copper area for thermal conduction to the mounting base, not ambient air cooling.

Is PHB27NQ10T,118 suitable for avalanche operation?

Yes-PHB27NQ10T,118 is specified for non-repetitive avalanche with E_AS = 128 mJ and I_AS = 28 A under defined test conditions (V_GS = 10 V, T_j(init) = 25 °C, unclamped inductive load). It is qualified for such operation but not intended for repetitive avalanche duty.

What is the gate threshold voltage range across temperature?

V_GS(th) ranges from 1 V (minimum) at T_j = 175 °C to 6 V (maximum) at T_j = −55 °C, with typical value 2–4 V at 25 °C. This wide variation necessitates gate drive design that ensures full enhancement across the full operating junction temperature range.

Does the mounting base require electrical isolation from the PCB?

No-the mounting base is electrically connected to the drain (pin 2) and must be soldered directly to a copper pour tied to the drain net. Isolation would compromise both thermal performance (R_th(j-mb) degrades >3× if insulated) and electrical integrity in high-current paths.

PHB27NQ10T,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PHB27NQ10T,118 FAQ

1.How can I place an order for PHB27NQ10T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB27NQ10T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB27NQ10T,118 reliable?

The price and inventory of PHB27NQ10T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB27NQ10T,118 is usually 5 days.

3.What payment methods are accepted for PHB27NQ10T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB27NQ10T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHB27NQ10T,118?

PHB27NQ10T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB27NQ10T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB27NQ10T,118?

For technical support, including PHB27NQ10T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB27NQ10T,118 requirements.

6.How does Aetrix verify that PHB27NQ10T,118 is sourced from the original manufacturer or authorized distributors?

All PHB27NQ10T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB27NQ10T,118 meets industry standards.

7.What is the process for return or replacement of PHB27NQ10T,118?

All PHB27NQ10T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB27NQ10T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB27NQ10T,118 part is unused and in its original packaging.

Return procedure for PHB27NQ10T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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