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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHB29N08T,118

Name: PHB29N08T,118
Brand: Nexperia USA Inc.
SKU: PHB29N08T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHB29N08T,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PHB29N08T,118.pdf

Description:: MOSFET N-CH 75V 27A D2PAK

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Product details

Overview

PHB29N08T from Nexperia is a standard-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 75 V V_DS, 27 A continuous drain current at T_mb = 25 °C, and 40–50 mΩ R_DS(on) at 11 V V_GS and 25 °C junction temperature. It delivers low conduction loss and high noise immunity via elevated gate threshold voltage, and is qualified for industrial motor control systems requiring robust switching under thermal stress.

For engineers reviewing the PHB29N08T datasheet, PHB29N08T pinout, PHB29N08T application, or PHB29N08T equivalent, this page provides verified electrical parameters, validated thermal resistance (R_th(j-mb) = 1.7 K/W), confirmed D2PAK mounting base connection, and real-world substitution guidance for high-current DC-DC and motor drive designs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining high V_GS(th) (3–5 V typ), enabling reliable turn-on with standard logic-level gate drivers. Its 1.7 K/W junction-to-mounting-base thermal resistance supports high-power dissipation up to 88 W at T_mb = 25 °C without forced cooling.

The device features fast switching dynamics (t_d(on) = 9.5 ns, t_f = 9 ns) and low gate charge (Q_G(tot) = 19 nC, Q_GD = 9 nC), optimized for hard-switched SMPS and PWM motor control where efficiency and EMI are critical. The integrated source-drain diode exhibits 0.95–1.2 V forward drop and 50 ns reverse recovery time at 14 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage before avalanche; suitable for 48 V bus and 60 V transient clamping in industrial power stages.
R_DS(on) @ 25 °C	40–50 mΩ - Confirmed at V_GS = 11 V, I_D = 14 A; enables ≤0.7 W conduction loss at 14 A DC.
R_DS(on) @ 175 °C	96–120 mΩ - Verified hot-resistance drift; ensures predictable thermal derating in enclosed motor drives.
Q_GD	9 nC - Gate-drain charge measured at V_DS = 60 V, I_D = 29 A; directly impacts Miller-induced switching delay and dv/dt immunity.
R_th(j-mb)	1.7 K/W - Junction-to-mounting-base thermal resistance; allows direct heatsink mounting for >80 W power handling with minimal interface resistance.
I_D (peak)	108 A - Pulsed drain current limit (t_p ≤10 µs); supports short-circuit withstand in overcurrent protection schemes.
V_GS(th)	3–5 V - Gate threshold voltage range at 25 °C; ensures noise margin >2 V against system-level transients in noisy industrial environments.

Pinout & Package

PHB29N08T uses the SOT404 (D2PAK) plastic surface-mount package with isolated leads and an exposed metal mounting base electrically connected to the drain terminal. The package supports high-current PCB routing and direct thermal coupling to heatsinks via the base.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control input; requires ≥11 V drive for full enhancement; high V_GS(th) prevents accidental turn-on during power-up.
2	Drain (D)	Main high-side power path; internally bonded to mounting base; must be thermally and electrically connected to heatsink.
3	Source (S)	Power return node; referenced to gate drive ground; carries full load current and source-diode reverse recovery charge.
Mounting base (mb)	Drain (D)	Electrically tied to pin 2; primary thermal path; requires insulated mounting hardware if drain is not at chassis potential.

Key Features

Feature	Design Value
High gate threshold voltage	V_GS(th) = 3–5 V at 25 °C - Reduces susceptibility to false triggering from EMI or supply rail bounce in motor control PCB layouts.
Low on-state resistance	40–50 mΩ at 25 °C - Minimizes I²R losses in high-duty-cycle applications such as BLDC phase-leg switching.
TrenchMOS architecture	Optimized cell density and trench depth - Delivers superior R_DS(on) × Q_G figure-of-merit versus planar MOSFETs of same voltage class.
Robust source-drain diode	V_SD = 0.95–1.2 V, t_rr = 50 ns - Enables efficient synchronous rectification and freewheeling in half-bridge topologies without external Schottky.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side and low-side power switch; handles 27 A continuous phase current with 100 kHz PWM switching.

Use Value: Low R_DS(on) and 1.7 K/W R_th(j-mb) enable compact heatsink design and <1.5 °C/W thermal budget at full load.

Use Scenario: Primary-side switch in isolated 48 V–12 V flyback converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Main switching transistor; operates at 100–200 kHz with 75 V breakdown margin above 48 V input.

Use Value: 9 nC Q_GD and 19 nC Q_G(tot) reduce gate driver power loss and improve light-load efficiency.

Solar Charge Controllers

UPS Inverters

Use Scenario: MPPT buck-stage switch in off-grid solar charge controllers handling 20–30 A battery charging current.

IC Role / Device Role / Timing Role: Unidirectional power switch; blocks reverse current during night-time panel isolation.

Use Value: 75 V V_DS rating accommodates 60 V PV open-circuit voltage with safety margin; 108 A peak rating supports surge startup.

Use Scenario: Output H-bridge switch in line-interactive UPS inverters delivering 1 kVA AC output.

IC Role / Device Role / Timing Role: Bidirectional power switch; conducts and blocks during 50/60 Hz AC synthesis with PWM modulation.

Use Value: Integrated source-drain diode with 50 ns t_rr eliminates need for external anti-parallel diodes, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP28NF50	500 V V_DS, 28 A I_D, 0.18 Ω R_DS(on) - Higher voltage rating but 3.6× higher on-resistance at 25 °C.	Designed for 400 V AC-DC front-end; less efficient in 48 V systems due to higher conduction loss.	Select when higher voltage margin is required; avoid for low-voltage, high-current motor drives.
IRFZ44NPBF	55 V V_DS, 49 A I_D, 28 mΩ R_DS(on) - Lower voltage rating but lower on-resistance and cost.	Rated only to 55 V; unsuitable for 48 V systems with >10 V transients or 60 V hold-up requirements.	Prefer for 24 V or ≤40 V applications where voltage headroom is sufficient and cost sensitivity is high.

Compared with STP28NF50 and IRFZ44NPBF, PHB29N08T offers optimal balance of 75 V rating, 40–50 mΩ R_DS(on), and 1.7 K/W thermal resistance-making it uniquely suited for 48 V industrial motor drives where both voltage margin and thermal performance are critical.

Availability

PHB29N08T is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and solar charge controllers requiring stable component supply across extended production lifecycles.

Supply support for PHB29N08T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with manufacturing rooted in process innovation and automotive-grade quality standards.

PHB29N08T belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered specifically for industrial and computing power conversion where ruggedness, thermal performance, and consistent parametric behavior across temperature are essential.

FAQ

What is the maximum continuous drain current for PHB29N08T at 100 °C mounting base temperature?

The maximum continuous drain current is 19.2 A at T_mb = 100 °C and V_GS = 11 V, as specified in Table 4 (Limiting Values). This reflects thermal derating from the 27 A rating at 25 °C, governed by the device's normalized current curve in Figure 1.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base is internally connected to pin 2 (drain) and forms part of the drain circuit. Electrical isolation must be implemented externally using insulating thermal pads or shoulder washers when mounting to grounded heatsinks.

Can PHB29N08T be driven directly by a 3.3 V microcontroller GPIO?

No-its minimum V_GS(th) is 2.1 V at 175 °C, but full enhancement requires ≥11 V V_GS to achieve 40–50 mΩ R_DS(on). A dedicated gate driver or level-shifting circuit is mandatory for reliable operation.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is bounded by R_DS(on)-limited conduction (V_DS = I_D × R_DS(on)) and thermal limits. From Figure 3, maximum DC current drops to ~12 A at V_DS = 30 V due to 88 W P_tot and thermal resistance constraints.

PHB29N08T,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 11V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 14A, 11V

Vgs(th) (Max) @ Id:: 5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PHB29N08T,118 FAQ

1.How can I place an order for PHB29N08T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB29N08T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB29N08T,118 reliable?

The price and inventory of PHB29N08T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB29N08T,118 is usually 5 days.

3.What payment methods are accepted for PHB29N08T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB29N08T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHB29N08T,118?

PHB29N08T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB29N08T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB29N08T,118?

For technical support, including PHB29N08T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB29N08T,118 requirements.

6.How does Aetrix verify that PHB29N08T,118 is sourced from the original manufacturer or authorized distributors?

All PHB29N08T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB29N08T,118 meets industry standards.

7.What is the process for return or replacement of PHB29N08T,118?

All PHB29N08T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB29N08T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB29N08T,118 part is unused and in its original packaging.

Return procedure for PHB29N08T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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