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NXP Semiconductors PHB38N02LT,118
- Part No.:
- PHB38N02LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB38N02LT,118.pdf
- Description:
- MOSFET N-CH 20V 44.7A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,572
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Product details
Overview
PHB38N02LT,118 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 20 V VDS, 44.7 A continuous drain current at Tmb = 25 °C, and RDS(on) ≤ 16 mΩ at VGS = 5 V - designed for high-efficiency linear regulators in DDR memory power delivery.
For engineers reviewing the PHB38N02LT,118 datasheet, PHB38N02LT,118 pinout, PHB38N02LT,118 application, or PHB38N02LT,118 equivalent, key selection criteria include 2.5 V gate drive compatibility, low thermal resistance (Rth(j-mb) = 2.6 K/W), and mounting-base–referenced thermal design for high-current DC operation.
Technical Context
This device uses TrenchMOS™ technology to achieve low on-resistance with logic-level gate drive, enabling direct interface with 2.5 V and 3.3 V controllers without level-shifting. Its gate threshold voltage (VGS(th)) ranges from 0.5 V to 1.5 V at 25 °C, supporting robust turn-on under low-voltage bias conditions.
The SOT404 package integrates a thermally optimized mounting base electrically connected to the drain, delivering Rth(j-mb) = 2.6 K/W and Ptot = 57.6 W at Tmb = 25 °C. Pin 2 is internally connected to the mounting base and not externally accessible - a critical layout constraint for PCB thermal and electrical design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage; defines safe operating range in low-voltage power rails like DDR VDDQ. |
| ID (DC) | 44.7 A at Tmb = 25 °C - Continuous current capability with mounting base heatsinking; derates to 31.6 A at 100 °C. |
| RDS(on) | ≤16 mΩ at VGS = 5 V, Tj = 25 °C - Low conduction loss enables <1 W dissipation at 25 A, critical for linear regulator efficiency. |
| VGS(th) | 0.5–1.5 V at 25 °C - Ensures reliable turn-on with 2.5 V logic outputs; remains functional down to 0.3 V at 175 °C junction. |
| Qg(tot) | 15.1 nC - Total gate charge determines driver strength requirement; supports fast switching in synchronous buck topologies. |
| Rth(j-mb) | 2.6 K/W - Junction-to-mounting-base thermal resistance enables direct thermal coupling to heatsinks or copper planes. |
| VSD | 0.98–1.2 V at IS = 25 A - Forward voltage of integrated body diode; impacts reverse recovery behavior in freewheeling paths. |
Pinout & Package
PHB38N02LT,118 is housed in the SOT404 (D2-PAK) plastic surface-mount package. The mounting base (MB) is electrically tied to the drain and serves as the primary thermal path; it is not a signal pin but must be soldered to a large copper area for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts 2.5 V logic-level drive; requires <100 nA leakage current compliance. |
| 2 | Drain (D) / Mounting Base (MB) | Internally connected to drain and exposed metal pad; not externally accessible - must be soldered to PCB thermal plane. |
| 3 | Source (S) | Power return path; referenced to gate drive; carries full load current and defines ground reference for control circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables RDS(on) ≤16 mΩ with 2.5 V gate drive - eliminates need for gate drivers in low-voltage control systems. |
| Logic-level gate threshold | VGS(th) = 0.5–1.5 V at 25 °C - ensures full enhancement with standard 2.5 V/3.3 V microcontroller GPIOs. |
| Drain-connected mounting base | Thermal resistance Rth(j-mb) = 2.6 K/W - allows >57 W power dissipation with minimal temperature rise when mounted on ≥10 cm² copper. |
| Low gate charge | Qg(tot) = 15.1 nC - reduces switching losses and driver IC loading in high-frequency applications up to 500 kHz. |
| Integrated source-drain diode | VSD = 0.98 V at 25 A - supports freewheeling in linear and switching regulators without external diode. |
Applications
| DDR Memory Linear Regulator | Hot-Swap Power Controller |
|---|---|
Use Scenario: Provides precise, low-noise VDDQ supply for DDR SDRAM modules where transient response and ripple rejection are critical. IC Role / Device Role / Timing Role: Acts as pass transistor in series-regulated topology, controlled by error amplifier feedback loop. Use Value: RDS(on) ≤16 mΩ minimizes dropout voltage and thermal load, enabling stable 1.25 V output at 30 A with <2 °C junction rise. |
Use Scenario: Enables controlled inrush current limiting during board insertion into live backplanes or hot-pluggable slots. IC Role / Device Role / Timing Role: Functions as main power switch with gate driven by dedicated hot-swap controller (e.g., LTC4210). Use Value: 2.5 V gate compatibility allows direct interface with hot-swap ICs; low Qg ensures fast, jitter-free turn-on sequencing. |
| Industrial 24 V Load Switch | High-Current USB-C PD Sink |
Use Scenario: Replaces electromechanical relays in programmable logic controllers for 24 V DC loads up to 40 A. IC Role / Device Role / Timing Role: Serves as solid-state load switch with overcurrent protection via external sense resistor. Use Value: Rth(j-mb) = 2.6 K/W enables sustained 40 A operation with passive heatsinking, eliminating fan requirements. |
Use Scenario: Implements programmable power path in USB-C PD sink designs requiring up to 20 V / 3 A input regulation. IC Role / Device Role / Timing Role: Operates as adjustable current-limit pass element in constant-current mode, controlled by DAC and op-amp. Use Value: VGS(th) stability over −55 to +175 °C ensures consistent current limit accuracy across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF06L | RDS(on) = 18 mΩ @ 10 V; VGS(th) = 1.0–2.5 V; TO-220 package; no integrated mounting base. | Higher gate threshold requires ≥3.3 V drive; TO-220 demands through-hole assembly and separate heatsink mounting. | Prefer PHB38N02LT,118 for SMT space-constrained DDR regulators needing 2.5 V drive and low Rth. |
| IRL3803PBF | RDS(on) = 12 mΩ @ 5 V; SO-8 package; Rth(j-a) = 62 K/W - unsuitable for >5 A continuous without forced air. | Lower RDS(on) but limited thermal capacity; only viable for low-duty-cycle or low-current applications. | Choose PHB38N02LT,118 when >20 A DC current and mounting-base thermal coupling are required. |
Compared with STP36NF06L and IRL3803PBF, PHB38N02LT,118 uniquely combines 2.5 V gate drive, D2-PAK mounting-base thermal integration, and 44.7 A DC rating - making it optimal for high-current linear regulation where board space, thermal performance, and logic-level compatibility are jointly constrained.
Availability
PHB38N02LT,118 is available at Aetrix Electronics and suitable for DDR memory power delivery, industrial load switching, hot-swap controllers, and high-current USB-C PD sink designs requiring stable component supply and long-term manufacturability.
Supply support for PHB38N02LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global semiconductor leader specializing in high-performance analog, logic, and power management solutions for automotive, industrial, and computing markets.
PHB38N02LT,118 belongs to the TrenchMOS™ logic-level FET product line, engineered specifically for low-voltage, high-current power conversion where gate drive simplicity and thermal efficiency are critical - especially in DDR memory and hot-swap applications.
FAQ
What is the maximum continuous drain current for PHB38N02LT,118 at 100 °C mounting base temperature?
The PHB38N02LT,118 supports 31.6 A continuous drain current at Tmb = 100 °C with VGS = 5 V, per the "Limiting values" table in the original Philips data sheet (Rev. 01, June 2003). This derating reflects thermal constraints - not electrical degradation - and assumes proper mounting base thermal coupling to PCB copper or heatsink.
Is PHB38N02LT,118 pin-compatible with PHD38N02LT?
No, PHB38N02LT,118 is not pin-compatible with PHD38N02LT. PHB38N02LT,118 uses the SOT404 (D2-PAK) package, while PHD38N02LT uses SOT428 (D-PAK); their footprints, lead spacing, and mounting base configurations differ. Both share identical pin numbering (G-D-S), but mechanical fit and thermal performance are not interchangeable.
Does PHB38N02LT,118 have a fully rated body diode for reverse conduction?
Yes, PHB38N02LT,118 includes a source-drain body diode rated for 44.7 A DC forward current (IS) at Tmb = 25 °C and 179 A peak (ISM). Its forward voltage is 0.98–1.2 V at 25 A, confirmed in the "Characteristics" section. However, it is not optimized for fast recovery and should not replace dedicated Schottky or SiC diodes in high-frequency freewheeling.
Can PHB38N02LT,118 operate reliably with a 2.5 V gate drive?
Yes, PHB38N02LT,118 is explicitly characterized for 2.5 V gate drive: RDS(on) ≤30 mΩ is guaranteed at VGS = 2.5 V and ID = 8 A. Its VGS(th) range (0.5–1.5 V at 25 °C) ensures strong enhancement even at marginal gate voltages, making PHB38N02LT,118 suitable for direct interface with 2.5 V logic families.
What is the thermal resistance from junction to mounting base for PHB38N02LT,118?
The thermal resistance from junction to mounting base (Rth(j-mb)) for PHB38N02LT,118 is 2.6 K/W, as specified in Table 3 ("Thermal characteristics") of the official data sheet. This value assumes proper soldering of the mounting base to a thermally adequate PCB copper area and is critical for calculating junction temperature under load.
PHB38N02LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 44.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 5V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.1 nC @ 5 V
- Vgs (Max):
- 12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57.6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB38N02LT,118 FAQ
1.How can I place an order for PHB38N02LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB38N02LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB38N02LT,118 reliable?
The price and inventory of PHB38N02LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB38N02LT,118 is usually 5 days.
3.What payment methods are accepted for PHB38N02LT,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB38N02LT,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHB38N02LT,118?
PHB38N02LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB38N02LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB38N02LT,118?
For technical support, including PHB38N02LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB38N02LT,118 requirements.
6.How does Aetrix verify that PHB38N02LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB38N02LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB38N02LT,118 meets industry standards.
7.What is the process for return or replacement of PHB38N02LT,118?
All PHB38N02LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB38N02LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB38N02LT,118 part is unused and in its original packaging.
Return procedure for PHB38N02LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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