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Nexperia USA Inc. PHB45NQ10T,118
- Part No.:
- PHB45NQ10T,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB45NQ10T,118.pdf
- Description:
- MOSFET N-CH 100V 47A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,378
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Product details
Overview
PHB45NQ10T from Nexperia is a standard-level N-channel TrenchMOS power FET in D2PAK (SOT404) package, rated for 100 V VDS, 47 A continuous drain current at Tmb = 25 °C, and 150 W total power dissipation. It delivers low RDS(on) of 22 mΩ (typ.) at VGS = 10 V and ID = 25 A, Tj = 25 °C, enabling high-efficiency switching in DC-DC converters and SMPS primary-side power stages.
For engineers reviewing the PHB45NQ10T datasheet, PHB45NQ10T pinout, PHB45NQ10T application, or PHB45NQ10T equivalent, key selection criteria include its 1 K/W junction-to-mounting-base thermal resistance, fast switching with 25 nC QGD, avalanche ruggedness (260 mJ unclamped), and compatibility with standard-level gate drive (10 V).
Technical Context
This device employs TrenchMOS technology to achieve low conduction losses and high thermal efficiency. Its gate threshold voltage ranges from 1 V (Tj = 175 °C) to 4 V (Tj = 25 °C), ensuring robust turn-on margin across temperature. The internal source inductance is 7.5 nH and drain inductance is 3.5 nH - critical for minimizing switching oscillation in hard-switched topologies.
It features an integrated body diode with 0.87 V forward voltage at 25 A and 82 ns reverse recovery time, supporting synchronous rectification and freewheeling roles. Avalanche energy rating of 260 mJ (unclamped, 100 µs pulse) enables reliable operation under inductive load switching stress without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 48 V input bus designs with 2× safety margin. |
| ID (continuous) | 47 A at Tmb = 25 °C - Supports >500 W output in TO-220-equivalent surface-mount footprint. |
| RDS(on) | 22 mΩ (typ.) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1.2 W conduction loss at 25 A. |
| QGD | 25 nC - Low gate-drain charge reduces Miller-induced switching delay and improves dV/dt immunity. |
| Rth(j-mb) | 1 K/W - Enables direct heatsink mounting for high-power density thermal management. |
| EAS | 260 mJ (unclamped) - Sustains single-pulse inductive energy without failure in flyback or buck-boost topologies. |
| tr/tf | 72 ns / 58 ns - Fast edge rates support >500 kHz switching frequency with minimal dead-time overhead. |
Pinout & Package
PHB45NQ10T uses the SOT404 (D2PAK) plastic surface-mount package with isolated mounting base connected to drain. Pin 2 is non-functional and not internally connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V nominal drive for full enhancement; gate leakage <100 nA at ±10 V. |
| 2 (D) | Drain (non-connected) | Not electrically connected per datasheet note [1]; mechanical stub only. |
| 3 (S) | Source | Power return path and reference for gate drive; bonded to internal die source metallization. |
| Mounting Base (mb) | Drain (thermal & electrical) | Exposed copper pad tied to drain; provides primary thermal path and must be soldered to PCB copper pour or heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 22 mΩ typ. at 10 V drive - Reduces conduction loss by >30% vs. comparable 100 V MOSFETs in same package. |
| TrenchMOS architecture | Enables higher cell density and lower gate charge - achieves 61 nC total gate charge while maintaining 25 nC QGD. |
| Avalanche-rated | 260 mJ unclamped EAS - Eliminates need for external clamping in non-isolated DC-DC converters with inductive loads. |
| Fast body diode | 82 ns trr, 0.26 µC Qr - Minimizes reverse recovery loss during synchronous rectification or freewheeling. |
| Thermal performance | 1 K/W Rth(j-mb) - Allows 150 W dissipation with ≤150 K rise above heatsink temperature. |
Applications
| Server VRMs | Industrial SMPS |
|---|---|
Use Scenario: High-current, high-efficiency 12 V input → 1 V/100 A output buck converter in AI accelerator server power delivery. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 400–600 kHz with synchronous rectification. Use Value: 22 mΩ RDS(on) limits conduction loss to <2.2 W at 100 A, while 1 K/W thermal resistance enables direct heatsink attachment on compact PCB layout. |
Use Scenario: 48 V input offline SMPS delivering 24 V/20 A for PLC I/O modules and motor drives. IC Role / Device Role / Timing Role: Main switch in active-clamp forward or LLC resonant converter primary side. Use Value: 100 V rating accommodates 48 V bus transients up to 80 V; 260 mJ avalanche energy handles leakage inductance spikes without snubber. |
| Telecom DC-DC | Renewable Energy Inverters |
Use Scenario: Intermediate bus converter (48 V → 12 V) in 5G base station power shelf with strict thermal constraints. IC Role / Device Role / Timing Role: High-frequency (500 kHz) hard-switched buck controller FET with low-QGD for reduced Miller plateau time. Use Value: 25 nC QGD enables clean turn-off with minimal gate driver current demand and reduced shoot-through risk. |
Use Scenario: MPPT boost stage in solar microinverter handling 60–100 V PV string input. IC Role / Device Role / Timing Role: Boost switch subjected to repetitive inductive turn-off stress and partial-load avalanche conditions. Use Value: Rated for 175 °C junction temperature and qualified for industrial ambient; 260 mJ EAS ensures reliability under partial shading-induced transient overvoltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP45NF10 | TO-220 package; RDS(on) = 28 mΩ; Rth(j-c) = 1.25 K/W; no avalanche rating specified. | Requires through-hole assembly and larger heatsink; unsuitable for high-density SMT layouts. | Select when legacy through-hole design or lower-cost procurement outweighs thermal and space advantages. |
| IRF540NPBF | TO-220; RDS(on) = 44 mΩ; Ptot = 82 W; QGD = 34 nC; no documented avalanche rating. | Limited to ≤300 W applications; higher conduction loss increases thermal burden in compact enclosures. | Acceptable only for cost-sensitive, low-frequency (<100 kHz), low-power designs where thermal margin is ample. |
Compared with STP45NF10 and IRF540NPBF, PHB45NQ10T offers superior power density (SMT D2PAK), lower RDS(on), better thermal resistance, and verified avalanche ruggedness - making it the preferred choice for modern high-frequency, high-reliability industrial and telecom power stages.
Availability
PHB45NQ10T is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, and telecom DC-DC convertors requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.
Supply support for PHB45NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process control and automotive-grade quality systems.
PHB45NQ10T belongs to Nexperia's TrenchMOS power MOSFET product line, engineered for high-efficiency, high-power-density switching in computing, communications, and industrial power conversion - not automotive or safety-critical use.
FAQ
Is PHB45NQ10T suitable for gate drive with 5 V logic?
No. PHB45NQ10T is a standard-level MOSFET requiring ≥10 V gate-source voltage for full enhancement. At VGS = 5 V, RDS(on) exceeds 100 mΩ, causing excessive conduction loss and thermal runaway risk. It must be driven by a dedicated 10–15 V gate driver, not 5 V microcontroller GPIO.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 2 in the datasheet, the normalized continuous drain current drops to ~65% at Tmb = 100 °C. With ID = 47 A at 25 °C, the derated value is approximately 30.5 A. This aligns with the limiting value table specifying 33 A at Tmb = 100 °C, VGS = 10 V.
Can PHB45NQ10T replace a TO-220 MOSFET in an existing design?
Yes, but only with PCB layout revision. The D2PAK (SOT404) footprint differs significantly from TO-220: it has three leads (one cropped), a large exposed drain pad, and requires thermal via pattern under the mounting base. Direct socket replacement is not possible without rework.
Does PHB45NQ10T have a guaranteed avalanche rating?
Yes. The datasheet specifies 260 mJ non-repetitive drain-source avalanche energy (EDS(AL)S) under defined test conditions (VGS = 10 V, ID = 40 A, Vsup ≤25 V, tp = 100 µs, RGS = 50 Ω). This is a measured, production-tested parameter - not a theoretical estimate.
PHB45NQ10T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB45NQ10T,118 FAQ
1.How can I place an order for PHB45NQ10T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB45NQ10T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB45NQ10T,118 reliable?
The price and inventory of PHB45NQ10T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB45NQ10T,118 is usually 5 days.
3.What payment methods are accepted for PHB45NQ10T,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB45NQ10T,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHB45NQ10T,118?
PHB45NQ10T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB45NQ10T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB45NQ10T,118?
For technical support, including PHB45NQ10T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB45NQ10T,118 requirements.
6.How does Aetrix verify that PHB45NQ10T,118 is sourced from the original manufacturer or authorized distributors?
All PHB45NQ10T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB45NQ10T,118 meets industry standards.
7.What is the process for return or replacement of PHB45NQ10T,118?
All PHB45NQ10T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB45NQ10T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB45NQ10T,118 part is unused and in its original packaging.
Return procedure for PHB45NQ10T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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