Nexperia USA Inc. PHB45NQ15T,118
- Part No.:
- PHB45NQ15T,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB45NQ15T,118.pdf
- Description:
- MOSFET N-CH 150V 45.1A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,517
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Product details
Overview
PHB45NQ15T from Nexperia is a standard-level N-channel TrenchMOS power FET in D2PAK (SOT404) package, rated for 150 V VDS, 45.1 A continuous drain current at Tmb = 25 °C, and 34 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency switching element in secondary-side rectification and DC-DC converter power stages.
For engineers reviewing the PHB45NQ15T datasheet, PHB45NQ15T pinout, PHB45NQ15T application, or PHB45NQ15T equivalent, key selection criteria include its low gate charge (32 nC), fast switching (td(on) = 11.5 ns, tf = 31 ns), thermal resistance to mounting base (0.65 K/W), and avalanche ruggedness (180 mJ unclamped).
Technical Context
This device employs TrenchMOS technology to achieve low RDS(on) and high current density while maintaining robust safe operating area (SOA) up to 10 ms at 100 V. Its gate threshold voltage ranges from 2–4 V at 25 °C and drops to 1 V at 175 °C, enabling stable turn-on across industrial temperature range.
The integrated source-drain diode exhibits 0.88–1.2 V forward drop at 25 A and 115 ns reverse recovery time, supporting synchronous rectification and freewheeling functions without external diodes. Thermal design leverages the exposed mounting base (connected to drain) for direct heatsink coupling and 230 W Ptot at Tmb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage for primary-side switch replacement or 12 V/48 V bus DC-DC output stage |
| ID (continuous) | 45.1 A at Tmb = 25 °C - Supports >500 W power conversion with forced-air cooling |
| RDS(on) | 34 mΩ typ at VGS = 10 V, Tj = 25 °C - Enables <0.7 W conduction loss at 45 A |
| QG(tot) | 32 nC - Reduces gate drive power and enables operation with low-power controllers (e.g., UC384x) |
| tr/tf | 22 ns / 31 ns - Supports >500 kHz switching in hard-switched topologies with minimal overlap loss |
| EAS | 180 mJ unclamped avalanche energy - Withstands inductive turn-off transients in relay drivers or motor control H-bridges |
| Rth(j-mb) | 0.65 K/W - Allows junction-to-heatsink thermal path with <1 °C/W total resistance for 100 W dissipation |
Pinout & Package
PHB45NQ15T uses the SOT404 (D2PAK) plastic surface-mount package with an exposed metal mounting base electrically connected to the drain terminal. The package supports high-power thermal management via direct PCB copper pour or mechanical heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode requiring ≤20 V rating; low QG enables simple RC or driver IC interface |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path |
| 3 (S) | Source | Power return and reference node; used for current sensing and gate drive referencing in low-side configurations |
| Mounting Base (mb) | Drain (electrically tied) | Thermal and electrical interface to heatsink; must be isolated from other system potentials unless drain-referenced |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) × QG figure-of-merit | 1.09 Ω·nC - Optimized for high-frequency, high-efficiency SMPS where switching + conduction losses dominate |
| Fast intrinsic body diode | trr = 115 ns, Qr = 360 nC - Enables use in quasi-resonant or synchronous rectifier designs without external Schottky |
| High avalanche energy rating | 180 mJ (unclamped) - Eliminates need for snubbers in inductive load switching applications like solenoid drivers |
| Industrial temperature range | Tj = −55 to +175 °C - Qualified for under-hood automotive auxiliary supplies and industrial motor drives |
| Low thermal resistance to mounting base | Rth(j-mb) = 0.65 K/W - Delivers 230 W power dissipation capability with minimal heatsink mass |
Applications
| AC-to-DC Secondary Rectification | Isolated DC-DC Converter |
|---|---|
Use Scenario: High-current output rectification in 12 V/24 V telecom and server PSUs using active clamp or LLC topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%. Use Value: 34 mΩ RDS(on) cuts rectifier loss by >60% vs. 40 V/45 A Schottky, enabling >95% full-load efficiency at 100 kHz. |
Use Scenario: Primary-side switch in 300–500 W isolated flyback or forward converters for industrial PLC power modules. IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlled by UC3845 or similar PWM controller. Use Value: 150 V rating and 90.2 A pulsed current support enable reliable operation with 100 V reflected transients and peak loads. |
| Motor Drive Half-Bridge | Solenoid / Relay Driver |
Use Scenario: Low-side switch in 24 V/48 V brushed DC motor H-bridge for HVAC actuators and robotic joints. IC Role / Device Role / Timing Role: Fast-turning, low-loss power switch handling bidirectional current and regenerative braking. Use Value: 115 ns trr and 360 nC Qr minimize shoot-through risk and reduce freewheeling loss during PWM commutation. |
Use Scenario: High-energy inductive load switch in automotive body control modules (BCM) controlling fuel injectors or door locks. IC Role / Device Role / Timing Role: Avalanche-rated power switch absorbing L·di/dt energy during turn-off without external clamping. Use Value: 180 mJ EAS withstands repeated 24 V/5 A solenoid turn-off events, eliminating need for TVS or Zener snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP45NF15 | Higher RDS(on) (45 mΩ), higher QG (65 nC), TO-220 package | Limited to lower-frequency (<200 kHz) designs due to slower switching and poorer thermal coupling | Prefer when through-hole mounting and legacy board layout compatibility are required |
| IRF1405 | Same VDS (150 V), higher RDS(on) (31 mΩ @ VGS = 10 V), TO-220AB package | Lower SOA and no avalanche rating - requires external protection in inductive switching | Choose only for cost-sensitive, non-avalanche-critical linear or low-duty-cycle switching |
Compared with STP45NF15 and IRF1405, PHB45NQ15T delivers superior high-frequency efficiency via lower QG and RDS(on) × QG, better thermal performance via D2PAK mounting base, and guaranteed avalanche ruggedness - making it optimal for compact, high-reliability DC-DC and motor drive designs.
Availability
PHB45NQ15T is available at Aetrix Electronics and suitable for AC-to-DC secondary rectification, isolated DC-DC converters, and motor drive half-bridge circuits requiring stable component supply and long-term industrial lifecycle support.
Supply support for PHB45NQ15T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with roots in NXP's standard products division and headquartered in Nijmegen, Netherlands.
PHB45NQ15T belongs to Nexperia's TrenchMOS power MOSFET product line, engineered for high-efficiency, high-power-density switching in computing, communications, consumer, and industrial power conversion systems.
FAQ
What is the maximum continuous drain current at elevated mounting base temperature?
At Tmb = 100 °C, the maximum continuous drain current is 31.9 A per Figure 1 and Table 4. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the SOA boundary at elevated ambient conditions typical in enclosed industrial enclosures.
Does PHB45NQ15T require a gate resistor for stability in high-speed switching?
Yes - a 5.6 Ω external gate resistor is specified in the datasheet for switching characterization (Figure 11). This value damps gate oscillation, controls dv/dt, and prevents unintended turn-on due to Miller capacitance coupling, especially critical in high-side or paralleled configurations.
Can PHB45NQ15T be used in avalanche mode repeatedly?
No - the 180 mJ EAS rating is for non-repetitive, unclamped inductive switching events only. Repetitive avalanche operation is not characterized or guaranteed and may cause cumulative degradation; proper snubbing or clamp circuits are required for cyclic inductive loads.
Is the mounting base electrically isolated from the PCB in standard layout?
No - the mounting base is electrically connected to the drain (Pin 2) and must be either insulated from the PCB ground plane using thermal pads or intentionally tied to drain potential. Direct soldering to a large copper pour is permitted only if that pour is at drain potential and thermally optimized.
PHB45NQ15T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 45.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1770 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB45NQ15T,118 FAQ
1.How can I place an order for PHB45NQ15T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB45NQ15T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of PHB45NQ15T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB45NQ15T,118 is usually 5 days.
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6.How does Aetrix verify that PHB45NQ15T,118 is sourced from the original manufacturer or authorized distributors?
All PHB45NQ15T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB45NQ15T,118 meets industry standards.
7.What is the process for return or replacement of PHB45NQ15T,118?
All PHB45NQ15T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB45NQ15T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB45NQ15T,118 part is unused and in its original packaging.
Return procedure for PHB45NQ15T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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