Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PHB73N06T,118

Name: PHB73N06T,118
Brand: NXP Semiconductors
SKU: PHB73N06T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PHB73N06T,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PHB73N06T,118.pdf

Description:: MOSFET N-CH 60V 73A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,686

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PHB73N06T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 60 V V_DS, 73 A continuous drain current at T_mb = 25 °C, and 12 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-current, low-loss switching element in DC-DC converters and SMPS primary-side power stages.

For engineers reviewing the PHB73N06T datasheet, PHB73N06T pinout, PHB73N06T application, or PHB73N06T equivalent, key selection criteria include its 60 V blocking voltage, 73 A thermal-limited current capability, 12 mΩ on-resistance, fast switching performance (t_d(on) ≤ 26 ns, t_f ≤ 71 ns), and avalanche ruggedness (E_AS = 125 mJ).

Technical Context

This device employs TrenchMOS™ technology to achieve low R_DS(on) while maintaining robust gate oxide integrity and stable threshold voltage (V_GS(th) = 2–4 V at 25 °C). Its gate charge profile-Q_g(tot) = 54 nC, Q_gd = 19 nC-supports efficient high-frequency hard-switching operation with moderate drive requirements.

The SOT404 package features a mounting base electrically connected to the drain, enabling direct heatsink attachment and low thermal resistance (R_th(j-mb) = 0.9 K/W). Pin 2 is internally inaccessible per datasheet, confirming a 2-terminal drain-source configuration with gate on pin 1 and source on pin 3.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum DC drain-source blocking voltage; defines safe operating range in 48 V bus and offline SMPS applications.
I_D (DC)	73 A at T_mb = 25 °C - Continuous current rating under ideal heatsinking; derates to 52 A at T_mb = 100 °C.
R_DS(on)	12 mΩ typ at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Low conduction loss enabling <1 W dissipation at 25 A, critical for high-efficiency power stages.
E_AS	125 mJ - Non-repetitive avalanche energy rating; supports unclamped inductive switching stress without failure.
Q_g(tot)	54 nC - Total gate charge determines driver strength requirement; enables ~1 MHz switching with standard gate drivers.
t_f	51–71 ns - Fast fall time minimizes switching transition losses during turn-off in hard-switched topologies.
V_GS(th)	2–4 V at T_j = 25 °C - Standard-level gate threshold compatible with 5 V and 10 V logic-driven gate drivers.

Pinout & Package

SOT404 (D2-PAK) plastic surface-mount package with isolated gate lead, drain-connected mounting base, and source terminal on lead 3. Pin 2 is not connected and must remain unattached per datasheet.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires 10 V drive for full enhancement; Q_g(tot) = 54 nC dictates driver slew rate and power loss.
2	Not connected	Internally inaccessible per datasheet; no PCB trace or pad connection permitted.
3	Source (S)	Power return path; referenced to gate drive ground; carries full load current and diode reverse recovery charge.
Mounting base	Drain (D)	Electrically tied to drain; provides primary thermal path to heatsink; R_th(j-mb) = 0.9 K/W enables high-power operation.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 12 mΩ R_DS(on) at 60 V rating-lower conduction loss than planar MOSFETs of comparable voltage class.
Low Q_gd/Q_g ratio	19/54 ≈ 0.35 - Reduces Miller effect, improving switching controllability and reducing risk of spurious turn-on in high-dv/dt environments.
Avalanche-rated	125 mJ E_AS - Allows reliable operation in circuits with inductive energy storage (e.g., motor drives, flyback snubbers) without external clamping.
Fast body diode	t_rr = 54 ns, Q_r = 0.12 µC - Minimizes reverse recovery loss and EMI in synchronous rectification and freewheeling paths.
Drain-connected mounting base	Direct thermal interface to heatsink with R_th(j-mb) = 0.9 K/W - Eliminates thermal interface resistance from separate drain pad, simplifying thermal design.

Applications

Server VRM Power Stage	Industrial DC-DC Converter
Use Scenario: High-current, high-efficiency 12 V input to 1 V output conversion in CPU voltage regulator modules. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter; operates at 300–600 kHz with forced PWM control. Use Value: 12 mΩ R_DS(on) reduces conduction loss below 0.75 W at 25 A, directly improving VRM efficiency and thermal margin.	Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for factory automation controllers. IC Role / Device Role / Timing Role: Main power switch driving transformer primary; handles 73 A peak currents during duty-cycle transitions. Use Value: 125 mJ avalanche energy rating absorbs leakage inductance spikes without snubber redesign, enhancing reliability in variable-load conditions.
Telecom Rectifier Module	UPS Inverter Stage
Use Scenario: Output rectification in 48 V telecom rectifier modules delivering up to 100 A to battery backup systems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in LLC resonant topology; commutated by precise gate timing relative to resonant current zero-crossing. Use Value: 54 ns t_f and 54 ns t_rr minimize dead-time losses and reduce output ripple, supporting >96% system efficiency.	Use Scenario: Half-bridge leg in online UPS inverters converting 380 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: High-current switching device handling 50–60 Hz fundamental plus harmonic content; subjected to repetitive inductive turn-off stress. Use Value: Robust 60 V V_DS rating and 73 A I_D support 3 kVA output with margin; mounting base-to-drain connection simplifies heatsink isolation.

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V input to 1 V output conversion in CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter; operates at 300–600 kHz with forced PWM control.

Use Value: 12 mΩ R_DS(on) reduces conduction loss below 0.75 W at 25 A, directly improving VRM efficiency and thermal margin.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for factory automation controllers.

IC Role / Device Role / Timing Role: Main power switch driving transformer primary; handles 73 A peak currents during duty-cycle transitions.

Use Value: 125 mJ avalanche energy rating absorbs leakage inductance spikes without snubber redesign, enhancing reliability in variable-load conditions.

Telecom Rectifier Module

UPS Inverter Stage

Use Scenario: Output rectification in 48 V telecom rectifier modules delivering up to 100 A to battery backup systems.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in LLC resonant topology; commutated by precise gate timing relative to resonant current zero-crossing.

Use Value: 54 ns t_f and 54 ns t_rr minimize dead-time losses and reduce output ripple, supporting >96% system efficiency.

Use Scenario: Half-bridge leg in online UPS inverters converting 380 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-current switching device handling 50–60 Hz fundamental plus harmonic content; subjected to repetitive inductive turn-off stress.

Use Value: Robust 60 V V_DS rating and 73 A I_D support 3 kVA output with margin; mounting base-to-drain connection simplifies heatsink isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	75 A/75 V, R_DS(on) = 10.5 mΩ, TO-220 package, higher Q_g (120 nC)	Requires larger gate driver due to higher Q_g; better suited for lower-frequency, higher-voltage designs where 75 V margin is needed.	Select when 75 V rating and TO-220 mechanical compatibility outweigh SOT404 thermal advantages.
IRF1404Z	200 A/40 V, R_DS(on) = 4.7 mΩ, TO-220, lower V_DS rating	Insufficient 40 V rating for 48 V bus applications; unsuitable for SMPS primary side but viable for low-voltage synchronous rectification.	Choose only for sub-40 V systems where ultra-low R_DS(on) justifies reduced voltage margin and different package footprint.

Compared with STP75NF75 and IRF1404Z, the PHB73N06T offers optimal balance of 60 V rating, 12 mΩ on-resistance, and SOT404 thermal performance-making it uniquely suitable for compact, high-efficiency 48 V industrial and telecom power stages where board space and thermal management are constrained.

Availability

PHB73N06T is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for PHB73N06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global semiconductor leader specializing in high-performance analog, logic, and power devices for automotive, industrial, and communications markets.

The PHB73N06T belongs to the TrenchMOS™ standard-level power MOSFET family, engineered for high-current, high-efficiency switching in 48 V and offline power supplies where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for PHB73N06T?

The PHB73N06T has a maximum continuous drain current (I_D) of 73 A at mounting base temperature (T_mb) = 25 °C and V_GS = 10 V. This rating decreases to 52 A at T_mb = 100 °C per the normalized derating curve in Figure 2 of the datasheet. The actual usable current depends on heatsink performance and ambient conditions.

Is PHB73N06T pin-compatible with PHP73N06T?

No-PHB73N06T uses the SOT404 (D2-PAK) package with drain-connected mounting base, while PHP73N06T is in SOT78 (TO-220AB) with identical pin 1–3 assignment but different mechanical form factor and thermal interface. They share electrical specifications but require distinct PCB footprints and heatsink mounting solutions.

What is the gate threshold voltage range for PHB73N06T?

The PHB73N06T gate-source threshold voltage (V_GS(th)) is specified from 2 V to 4 V at T_j = 25 °C and ID = 1 mA. At elevated junction temperature (175 °C), V_GS(th) drops to a minimum of 1 V, which must be considered for gate drive margin in high-temperature operation.

Does PHB73N06T have avalanche capability, and how is it rated?

Yes, the PHB73N06T is rated for non-repetitive avalanche energy (E_AS) of 125 mJ under defined test conditions: unclamped inductive load, I_AS = 50 A, t_p = 0.1 ms, V_DD ≤ 25 V, R_GS = 50 Ω, and V_GS = 5 V, starting from T_j = 25 °C. This rating supports robustness against inductive switching transients.

What is the thermal resistance from junction to mounting base for PHB73N06T?

The PHB73N06T has a maximum thermal resistance from junction to mounting base (R_th(j-mb)) of 0.9 K/W, as specified in Table 4. This low value reflects the direct metal-to-heatsink path via the drain-connected mounting base, enabling high-power dissipation with minimal temperature rise under proper heatsinking.

PHB73N06T,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2464 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 166W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PHB73N06T,118 FAQ

1.How can I place an order for PHB73N06T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHB73N06T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHB73N06T,118 reliable?

The price and inventory of PHB73N06T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB73N06T,118 is usually 5 days.

3.What payment methods are accepted for PHB73N06T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB73N06T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHB73N06T,118?

PHB73N06T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHB73N06T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHB73N06T,118?

For technical support, including PHB73N06T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB73N06T,118 requirements.

6.How does Aetrix verify that PHB73N06T,118 is sourced from the original manufacturer or authorized distributors?

All PHB73N06T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB73N06T,118 meets industry standards.

7.What is the process for return or replacement of PHB73N06T,118?

All PHB73N06T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB73N06T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHB73N06T,118 part is unused and in its original packaging.

Return procedure for PHB73N06T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…