My Inquiry
My Account
NXP Semiconductors PHB78NQ03LT,118
- Part No.:
- PHB78NQ03LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB78NQ03LT,118.pdf
- Description:
- MOSFET N-CH 25V 40A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,862
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHB78NQ03LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS FET in D2PAK (SOT404) package, rated for 25 V VDS, 40 A continuous drain current at Tmb = 25 °C, and RDS(on) ≤ 9 mΩ at VGS = 10 V - optimized for high-efficiency DC-to-DC converters and computer motherboard power stages.
For engineers reviewing the PHB78NQ03LT datasheet, PHB78NQ03LT pinout, PHB78NQ03LT application, or PHB78NQ03LT equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low QGD = 4 nC for fast switching, avalanche ruggedness (EDS(AL)S = 100 mJ), and thermal resistance Rth(j-mb) = 1.4 K/W to mounting base.
Technical Context
This device uses TrenchMOS technology to achieve low on-resistance and fast switching with logic-level gate drive capability. Its gate-source threshold voltage (1–2 V at Tj = 25 °C) enables direct interfacing with 3.3 V and 5 V controllers without level-shifting circuitry.
The integrated source-drain diode supports synchronous rectification and freewheeling operation, with VSD = 0.78–1.2 V at IS = 25 A and trr = 35 ns. Avalanche energy rating of 100 mJ ensures robustness under inductive load transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V bus applications. |
| RDS(on) | 7.65–9 mΩ @ VGS = 10 V - enables <1 W conduction loss at 40 A, critical for high-current power stages. |
| QGD | 4 nC - low Miller charge reduces switching losses and improves controllability in hard-switched topologies. |
| ID | 40 A continuous @ Tmb = 25 °C - specifies maximum steady-state current with heatsink mounting. |
| Rth(j-mb) | 1.4 K/W - thermal resistance from junction to mounting base; enables efficient heat transfer to PCB copper or heatsink. |
| EDS(AL)S | 100 mJ - non-repetitive avalanche energy rating; supports reliable operation during unclamped inductive turn-off events. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; logic-level compatible (VGS(th) = 1–2 V); requires <12 nC total gate charge for full enhancement. |
| 2 | Drain (D) | Main power output terminal; internally connected to mounting base; not externally accessible (lead cropped). |
| 3 | Source (S) | Power return path and reference for gate drive; forms low-impedance connection to ground plane in high-current layouts. |
| Mounting base | Drain (D) | Thermally and electrically tied to drain; serves as primary heat dissipation path and high-current current return node. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without gate drivers. |
| TrenchMOS technology | Delivers RDS(on) ≤ 9 mΩ at 10 V and low QG/QGD, reducing both conduction and switching losses simultaneously. |
| Avalanche-rated | 100 mJ unclamped inductive avalanche energy allows operation in non-synchronous buck or flyback topologies without external snubbers. |
| Low thermal resistance | Rth(j-mb) = 1.4 K/W enables >100 W power handling with proper board copper area, supporting compact thermal design. |
Applications
| Computer Motherboards | DC-to-DC Converters |
|---|---|
Use Scenario: High-current CPU/GPU core voltage regulation using multiphase buck converters. IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-side or low-side position, driven by dedicated PWM controller. Use Value: Low RDS(on) and fast switching minimize conduction and transition losses, improving efficiency above 90% at 40 A loads. |
Use Scenario: Point-of-load (POL) converter in telecom or server power supplies delivering 3.3 V/5 V/12 V at up to 40 A. IC Role / Device Role / Timing Role: Primary power switch in non-isolated buck topology with fixed-frequency or adaptive control. Use Value: Logic-level gate threshold and low QGD ensure clean turn-on/turn-off timing with standard controller outputs, reducing EMI. |
| Motor Drive Half-Bridges | Hot-Swap Controllers |
Use Scenario: Low-voltage BLDC motor drive stage in industrial actuators or fans, operating from 12–24 V bus. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20–100 kHz. Use Value: Avalanche ruggedness (100 mJ) tolerates back-EMF transients during abrupt current interruption without clamping diodes. |
Use Scenario: Inrush current limiting and fault protection in 12 V/24 V hot-swap modules for modular power systems. IC Role / Device Role / Timing Role: Main pass element controlled by dedicated hot-swap IC to limit dI/dt and respond to overcurrent events. Use Value: Low RDS(on) minimizes forward voltage drop and self-heating during normal operation, while fast turn-off supports precise current limiting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 6.0 mΩ @ 10 V; higher ID rating (140 A); TO-220 package; no mounting base thermal path. | Requires through-hole PCB layout and external heatsink; less suitable for surface-mount high-density designs. | Select when higher peak current and lower RDS(on) are prioritized over thermal integration and board space. |
| STP75NF75 | RDS(on) = 10.5 mΩ @ 10 V; 75 V VDS; TO-220; higher VGS(th) (2–4 V) limits 3.3 V drive reliability. | Better suited for 48 V systems; marginal gate drive margin with 3.3 V controllers due to higher threshold. | Choose only if 75 V blocking voltage is required and gate drive voltage ≥ 4.5 V is guaranteed. |
Compared with IRL3803PBF and STP75NF75, PHB78NQ03LT offers superior thermal integration via its D2PAK mounting base, tighter logic-level threshold control (1–2 V), and optimized QGD/RDS(on) trade-off for high-frequency synchronous buck stages - making it preferred for space-constrained, thermally demanding 12–24 V applications.
Availability
PHB78NQ03LT is available at Aetrix Electronics and suitable for computer motherboards, DC-to-DC converters, and motor drive half-bridges requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and embedded OEM programs.
Supply support for PHB78NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips Semiconductors' power management legacy.
The PHB78NQ03LT belongs to NXP's TrenchMOS logic-level power MOSFET family, designed specifically for high-efficiency, high-current switching in space-constrained, thermally demanding DC-DC and motor control applications.
FAQ
What is the gate-source threshold voltage range for PHB78NQ03LT?
The PHB78NQ03LT has a gate-source threshold voltage (VGS(th)) of 1.0–2.0 V at Tj = 25 °C, and 0.5–2.2 V across the full temperature range (−55 °C to +175 °C). This logic-level range ensures reliable turn-on with 3.3 V and 5 V gate drivers without level shifting. The PHB78NQ03LT maintains usable enhancement down to 0.5 V at high temperature, supporting robust operation in thermally stressed environments.
Can PHB78NQ03LT be used in synchronous rectification applications?
Yes, PHB78NQ03LT supports synchronous rectification due to its low RDS(on) (≤9 mΩ at VGS = 10 V), fast switching (td(on) = 13 ns, tf = 15 ns), and integrated source-drain diode with VSD = 0.78–1.2 V and trr = 35 ns. The PHB78NQ03LT's low QGD and tight VGS(th) tolerance enable precise timing control in synchronous buck or LLC secondary-side designs.
What is the maximum continuous drain current rating for PHB78NQ03LT?
The PHB78NQ03LT is rated for 40 A continuous drain current (ID) at mounting base temperature Tmb = 25 °C and VGS = 5 V or 10 V. This rating holds up to Tmb = 100 °C per datasheet Figure 2. Derating applies above 25 °C; the PHB78NQ03LT delivers full 40 A only with adequate PCB copper area or heatsinking to maintain Tmb ≤ 25 °C.
Does PHB78NQ03LT have avalanche capability, and how is it specified?
Yes, PHB78NQ03LT is fully avalanche-rated with EDS(AL)S = 100 mJ (non-repetitive, unclamped inductive load, ID = 32 A, VDD ≤ 25 V). This specification is measured under standardized conditions (RGS = 50 Ω, VGS = 10 V, starting Tj = 25 °C) and confirms ruggedness against inductive switching transients. The PHB78NQ03LT's avalanche performance is integral to its qualification for motor drive and non-synchronous SMPS use.
What is the thermal resistance from junction to mounting base for PHB78NQ03LT?
The PHB78NQ03LT has a maximum thermal resistance Rth(j-mb) of 1.4 K/W from junction to mounting base, as specified in Table 4. This value reflects direct conduction through the metal mounting base - the primary thermal path. The PHB78NQ03LT relies on this low-resistance path rather than junction-to-ambient (Rth(j-a) = 50 K/W) for high-power operation, requiring PCB copper or heatsink contact to the exposed drain pad.
PHB78NQ03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 970 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB78NQ03LT,118 FAQ
1.How can I place an order for PHB78NQ03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB78NQ03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB78NQ03LT,118 reliable?
The price and inventory of PHB78NQ03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB78NQ03LT,118 is usually 5 days.
3.What payment methods are accepted for PHB78NQ03LT,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHB78NQ03LT,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHB78NQ03LT,118?
PHB78NQ03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB78NQ03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB78NQ03LT,118?
For technical support, including PHB78NQ03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB78NQ03LT,118 requirements.
6.How does Aetrix verify that PHB78NQ03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB78NQ03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB78NQ03LT,118 meets industry standards.
7.What is the process for return or replacement of PHB78NQ03LT,118?
All PHB78NQ03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB78NQ03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB78NQ03LT,118 part is unused and in its original packaging.
Return procedure for PHB78NQ03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHB78NQ03LT,118 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
