NXP Semiconductors PHB95NQ04LT,118

Overview

PHB95NQ04LT from NXP Semiconductors (formerly Philips) is a logic-level N-channel TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 40 V V_DS, 75 A continuous drain current at T_mb = 25 °C, 7 mΩ typical R_DS(on) at V_GS = 10 V, and 157 W total power dissipation - designed for high-current DC switching in motor drives and UPS systems.

For engineers reviewing the PHB95NQ04LT datasheet, PHB95NQ04LT pinout, PHB95NQ04LT application, or PHB95NQ04LT equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2 V), low on-resistance under 4.5 V gate bias, avalanche energy rating (200 mJ), thermal resistance to mounting base (0.95 K/W), and SOT404 package mounting base connection to drain.

Technical Context

This device uses TrenchMOS™ technology to achieve enhanced conduction efficiency and fast switching performance. Its gate threshold voltage (1–2 V at 25 °C) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.

The SOT404 package integrates a large copper mounting base electrically tied to the drain, supporting high-current PCB heatsinking while maintaining low thermal resistance (R_th(j-mb) ≤ 0.95 K/W). The device exhibits specified dynamic parameters including Q_g(tot) = 32.7 nC, t_d(on) = 29 ns, and t_f = 89 ns under standard test conditions.

Key Specifications

Pinout & Package

SOT404 (D2-PAK) package with isolated lead frame and integral mounting base electrically connected to drain. Pin 2 is internally inaccessible per datasheet note [1]. Mounting base must be thermally and electrically connected to system ground plane or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP95NF04L and IRF1404ZLPBF, the PHB95NQ04LT offers optimal balance of logic-level drivability, SOT404 surface-mount compatibility, and 75 A/40 V capability - making it preferred for space-constrained, MCU-driven industrial power stages where gate simplicity and thermal performance are prioritized over absolute minimum R_DS(on).

Availability

PHB95NQ04LT is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and DC-to-DC converters requiring stable component supply and long-term industrial availability.

Supply support for PHB95NQ04LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, formed from the spin-off of Philips Semiconductors in 2006.

The PHB95NQ04LT belongs to NXP's legacy TrenchMOS™ logic-level power MOSFET family, engineered for high-current, low-voltage switching in industrial control, power conversion, and solid-state relay replacement applications.

FAQ

What is the maximum continuous drain current rating for PHB95NQ04LT?

The PHB95NQ04LT is rated for 75 A continuous drain current at mounting base temperature (T_mb) = 25 °C with V_GS = 10 V. Derating applies above 25 °C - at T_mb = 100 °C, the device still supports 75 A due to its thermal design, as confirmed in Table 3 of the datasheet. Actual usable current depends on PCB heatsinking and ambient conditions.

Is PHB95NQ04LT compatible with 3.3 V microcontroller GPIO outputs?

Yes, PHB95NQ04LT has a gate-source threshold voltage (V_GS(th)) of 1–2 V at 25 °C, and delivers R_DS(on) ≤ 9 mΩ at V_GS = 4.5 V - ensuring full enhancement with 3.3 V logic. Its low threshold and low on-resistance at low gate voltages make PHB95NQ04LT suitable for direct drive from most 3.3 V MCUs without external level shifters or gate drivers.

What is the thermal resistance from junction to mounting base for PHB95NQ04LT?

The PHB95NQ04LT has a maximum thermal resistance from junction to mounting base (R_th(j-mb)) of 0.95 K/W, as specified in Table 4. This low value reflects the highly conductive copper mounting base directly bonded to the die drain - enabling efficient heat transfer to an external heatsink or PCB copper pour, which is essential for sustaining its 157 W power dissipation rating.

Does PHB95NQ04LT have avalanche energy rating, and what is its value?

Yes, PHB95NQ04LT is rated for non-repetitive drain-source avalanche energy (E_DS(AL)S) of 200 mJ under defined test conditions: unclamped inductive load, I_D = 45 A, t_p = 0.17 ms, V_DD ≤ 40 V, R_GS = 50 Ω, V_GS = 10 V, and starting junction temperature of 25 °C. This rating confirms PHB95NQ04LT's ability to withstand transient inductive kickback without failure.

What is the package type and pin configuration of PHB95NQ04LT?

The PHB95NQ04LT uses the SOT404 (D2-PAK) plastic surface-mount package with three terminals: Pin 1 = Gate, Pin 3 = Source, and the mounting base = Drain. Pin 2 is internally connected to drain but not accessible externally, as explicitly noted in the datasheet pinning section. The mounting base must be soldered to a thermal pad for both electrical and thermal performance.