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NXP Semiconductors PHB96NQ03LT,118
- Part No.:
- PHB96NQ03LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PHB96NQ03LT,118.pdf
- Description:
- MOSFET N-CH 25V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,415
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Product details
Overview
PHB96NQ03LT from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 25 V drain-source voltage, 75 A DC drain current at 5 V gate drive, and 4.2 mΩ typical RDS(on) at VGS = 10 V/ID = 25 A. It serves as a high-current synchronous rectifier or main switch in low-voltage DC-DC converters.
For engineers reviewing the PHB96NQ03LT datasheet, PHB96NQ03LT pinout, PHB96NQ03LT application, or PHB96NQ03LT equivalent, this page delivers verified electrical specs, thermal resistance (Rth(j-mb) = 1.3 K/W), avalanche energy rating (185 mJ), gate charge (26.7 nC), and diode recovery characteristics - all critical for high-efficiency, high-density power stage design.
Technical Context
This device uses TrenchMOS™ technology to achieve low gate charge (26.7 nC) and ultra-low on-resistance (4.2–7.5 mΩ depending on VGS and temperature), enabling fast switching with minimal conduction loss in 3.3 V–5 V control environments. Its mounting base is internally connected to the drain, supporting direct heatsink attachment.
The PHB96NQ03LT integrates a robust body diode with 43 ns reverse recovery time and 40 nC recovered charge, suitable for freewheeling in synchronous buck topologies. Avalanche ruggedness is specified at 185 mJ under unclamped inductive conditions, confirming reliability in transient overvoltage events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum continuous drain-source blocking voltage; defines use in ≤24 V systems. |
| ID (DC) | 75 A at Tmb = 25 °C, VGS = 5 V - Supports high-current output stages without external gate drivers. |
| RDS(on) | 4.2 mΩ typ @ VGS = 10 V, ID = 25 A - Enables <1 W conduction loss at 50 A, critical for thermal management. |
| Qg(tot) | 26.7 nC - Low total gate charge reduces driver power and switching transition time. |
| Rth(j-mb) | 1.3 K/W - Junction-to-mounting-base thermal resistance enables efficient heatsinking without thermal interface layers. |
| EAS | 185 mJ - Non-repetitive avalanche energy rating validates robustness against inductive kickback in hard-switched converters. |
| VSD | 0.9 V typ @ IS = 25 A - Low forward voltage of integrated body diode minimizes freewheeling loss. |
Pinout & Package
SOT404 (D2-PAK) plastic surface-mount package with isolated leads and integral mounting base electrically connected to the drain terminal. Mounting base provides low-inductance, low-thermal-resistance path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; logic-level compatible (VGS(th) = 1.0–2.0 V); requires no level-shifting for 3.3 V/5 V microcontrollers. |
| 2 | Drain (D) | High-side or low-side power node; internally bonded to mounting base - must be electrically isolated from PCB ground plane if used in high-side configuration. |
| 3 | Source (S) | Power return path; referenced to gate drive; forms common node for gate driver supply and current sensing. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V, enabling direct interfacing with 3.3 V and 5 V controllers without gate drivers. |
| Ultra-low RDS(on) | 4.2 mΩ typical at 10 V gate drive ensures <0.5 W conduction loss at 30 A, reducing thermal stress in compact converters. |
| Low Qg and Qgd | 26.7 nC total gate charge and 8.4 nC Miller charge minimize switching losses and improve EMI behavior in high-frequency designs. |
| Robust body diode | 43 ns trr and 40 nC Qr support efficient synchronous rectification and reduce snubber requirements in buck converters. |
| Avalanche-rated | 185 mJ single-pulse EAS allows safe operation under inductive load transients without external clamping circuits. |
Applications
| Server VRMs | Industrial DC-DC Modules |
|---|---|
Use Scenario: High-current, multi-phase voltage regulator modules supplying CPUs and FPGAs in data center servers. IC Role / Device Role / Timing Role: Primary synchronous rectifier in 12 V → 1.2 V buck stages, operating at 300–600 kHz with tight duty-cycle control. Use Value: 4.2 mΩ RDS(on) and 26.7 nC Qg enable >92% efficiency at 100 A output while maintaining junction temperature below 125 °C with standard heatsinking. |
Use Scenario: Isolated or non-isolated 24 V input to 5 V/12 V output DC-DC converters in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Main switch in high-side or low-side configuration, driven by dedicated gate drivers or integrated controller ICs. Use Value: 75 A DC rating and 1.3 K/W Rth(j-mb) allow sustained full-load operation in convection-cooled enclosures without forced airflow. |
| Telecom Power Supplies | Automotive Body Control Modules |
Use Scenario: Intermediate bus converters (48 V → 12 V) in 48 V telecom rectifiers and distributed power architectures. IC Role / Device Role / Timing Role: High-efficiency power switch handling continuous 50–60 A loads with fast transient response. Use Value: Low VGS(th) (1.5 V typ) and stable RDS(on) up to 175 °C ensure reliable startup and operation across wide ambient temperature ranges (−40 °C to +85 °C). |
Use Scenario: Load switching for high-power solenoids, pumps, and lighting in 12 V automotive body electronics. IC Role / Device Role / Timing Role: High-side smart power switch replacing mechanical relays, controlled via CAN or LIN-compatible microcontrollers. Use Value: Integrated avalanche ruggedness (185 mJ) and −55 °C to +175 °C Tj rating eliminate need for external flyback protection in inductive load switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N3LLH6 | Higher RDS(on) (5.2 mΩ @ 4.5 V), lower ID (60 A), same SOT404 package and 25 V rating. | Marginally lower current capability and higher conduction loss at low gate drive; suited for cost-sensitive, lower-power variants. | Select when gate drive is limited to 4.5 V and peak current remains ≤60 A; verify thermal margin with Rth(j-mb) = 1.5 K/W. |
| IRF1404ZPBF | Higher VDS (40 V), higher RDS(on) (4.7 mΩ @ 10 V), TO-220AB package (SOT78), no avalanche rating specified. | Wider voltage margin but larger footprint and no documented avalanche ruggedness; requires PCB layout revision. | Choose only if system requires ≥30 V blocking or existing TO-220 heatsink infrastructure is fixed; not drop-in for PHB96NQ03LT. |
Compared with STL110N3LLH6 and IRF1404ZPBF, the PHB96NQ03LT delivers superior current density (75 A), lowest RDS(on) at logic-level drive, and verified avalanche performance - making it optimal for space-constrained, high-efficiency 24 V DC-DC stages where thermal and transient robustness are critical.
Availability
PHB96NQ03LT is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for PHB96NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with deep expertise in automotive, industrial, and computing power management.
The PHB96NQ03LT belongs to the TrenchMOS™ logic-level FET product line, engineered specifically for high-current, low-voltage switching in DC-DC conversion where gate drive simplicity, conduction efficiency, and thermal reliability are paramount.
FAQ
What is the maximum continuous drain current for PHB96NQ03LT at 100 °C mounting base temperature?
The PHB96NQ03LT supports 65 A DC drain current at Tmb = 100 °C and VGS = 5 V, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints of the SOT404 package and must be applied in thermally constrained layouts where heatsink performance limits junction temperature rise. The PHB96NQ03LT maintains full functionality across its rated range without parameter shift.
Is PHB96NQ03LT pin-compatible with PHD96NQ03LT or PHP96NQ03LT?
No - PHB96NQ03LT (SOT404/D2-PAK), PHD96NQ03LT (SOT428/D-PAK), and PHP96NQ03LT (SOT78/TO-220AB) share identical electrical specifications but differ in package outline, thermal resistance, and mechanical mounting. Pin numbering is consistent (G-D-S), but physical dimensions, lead pitch, and mounting base geometry are incompatible across packages. The PHB96NQ03LT requires SOT404-specific footprint and heatsink interface.
Does PHB96NQ03LT include an integrated Schottky diode?
No - the PHB96NQ03LT contains a parasitic body diode inherent to its vertical N-channel MOSFET structure, not an integrated Schottky. Its body diode has VSD = 0.9 V typ at 25 A and trr = 43 ns, as characterized in Table 5. While functional for freewheeling, it is not optimized for ultra-fast switching like discrete Schottky devices. The PHB96NQ03LT relies on synchronous rectification or external diodes for highest efficiency.
What is the gate-source threshold voltage range for PHB96NQ03LT across temperature?
The PHB96NQ03LT exhibits VGS(th) = 1.0–2.0 V at Tj = 25 °C, 0.5–? V at Tj = 175 °C (min only specified), and up to 2.3 V at Tj = −55 °C, per Table 5. This negative temperature coefficient ensures stable turn-on behavior across industrial temperature ranges. The PHB96NQ03LT remains fully enhanced above 4.5 V gate drive across its full operating junction temperature span.
Can PHB96NQ03LT be used in high-side switching configurations?
Yes - the PHB96NQ03LT supports high-side switching, but its mounting base is internally connected to the drain terminal. Therefore, when used in high-side topology, the heatsink must be electrically isolated from system ground, and the gate driver must provide floating or level-shifted output referenced to the drain potential. The PHB96NQ03LT's 20 V maximum VGS rating and logic-level threshold make it viable for such implementations with proper driver selection.
PHB96NQ03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.95mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 26.7 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 115W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PHB96NQ03LT,118 FAQ
1.How can I place an order for PHB96NQ03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHB96NQ03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHB96NQ03LT,118 reliable?
The price and inventory of PHB96NQ03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHB96NQ03LT,118 is usually 5 days.
3.What payment methods are accepted for PHB96NQ03LT,118?
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4.How is shipping managed for PHB96NQ03LT,118?
PHB96NQ03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHB96NQ03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHB96NQ03LT,118?
For technical support, including PHB96NQ03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHB96NQ03LT,118 requirements.
6.How does Aetrix verify that PHB96NQ03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHB96NQ03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHB96NQ03LT,118 meets industry standards.
7.What is the process for return or replacement of PHB96NQ03LT,118?
All PHB96NQ03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHB96NQ03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHB96NQ03LT,118 part is unused and in its original packaging.
Return procedure for PHB96NQ03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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