My Inquiry
My Account
Nexperia USA Inc. PHC2300,118
- Part No.:
- PHC2300,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHC2300,118.pdf
- Description:
- MOSFET N/P-CH 300V 0.34A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,145
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHC2300,118 from Nexperia is a complementary dual MOSFET in a single SO8 (SOT96-1) package, integrating one N-channel and one P-channel enhancement-mode transistor. It delivers 300 V drain-source voltage rating (N- and P-channel), 340 mA / −235 mA continuous drain current, and 6 Ω / 17 Ω RDS(on) at VGS = ±10 V - enabling high-voltage line interface and bidirectional switching in telecom terminal equipment.
For engineers reviewing the PHC2300,118 datasheet, PHC2300,118 pinout, PHC2300,118 application, or PHC2300,118 equivalent, key selection criteria include complementary high-voltage capability, fast switching (ton = 7 ns, toff = 53 ns for N-channel), SO8 thermal performance (Rth(j-sp) = 43 K/W), and suitability for relay/line driver designs requiring matched N/P pairs in one footprint.
Technical Context
This dual MOSFET implements independent N- and P-channel enhancement-mode structures with separate gate, source, and drain terminals - no internal connection between channels. Each device features VGS(th) of 0.8–2 V (N) and −0.8 to −2 V (P), enabling TTL/CMOS-compatible drive without level-shifting.
Static and dynamic parameters are characterized across temperature (Tj = 25 °C to 150 °C) and pulsed conditions: QG(tot) = 6240 pC (N) / 2137 pC (P), Ciss = 102 pF / 45 pF, and SOAR-limited safe operating area up to 300 V and 1.4 A (N) / −0.9 A (P) peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | ±300 V - supports telecom line interfaces operating up to 240 V DC or AC peak without breakdown. |
| ID (continuous) | 340 mA (N), −235 mA (P) at Tsp = 80 °C - defines steady-state current capability per channel under PCB tie-point thermal constraint. |
| RDS(on) | 6 Ω (N), 17 Ω (P) at VGS = ±10 V, Tj = 25 °C - determines conduction loss and thermal rise in linear or switching operation. |
| ton/toff | 7/53 ns (N), 4/25 ns (P) - enables >10 MHz switching in line driver and transformer driver topologies. |
| QG(tot) | 6240 pC (N), 2137 pC (P) - sets gate drive power requirement and influences switching loss in PWM applications. |
| Ciss | 102 pF (N), 45 pF (P) - impacts high-frequency gain stability and EMI filtering design in amplifier/driver stages. |
| Ptot | 1.6 W total (0.8 W per device) at Tsp = 80 °C - establishes maximum combined dissipation before thermal derating applies. |
Pinout & Package
PHC2300,118 uses the SOT96-1 (SO8) plastic small outline package: 8-lead, 3.9 mm body width, standard JEDEC MS-012 outline with gull-wing leads. Thermal resistance from junction to solder point is 43 K/W.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of N-channel MOSFET - connects to low-side return path in half-bridge or push-pull configurations. |
| 2 | G1 | Gate terminal of N-channel MOSFET - requires ≥10 V drive for full enhancement; referenced to S1. |
| 3 | S2 | Source terminal of P-channel MOSFET - serves as high-side reference in complementary output stages. |
| 4 | G2 | Gate terminal of P-channel MOSFET - driven negative relative to S2 for turn-on; compatible with inverted logic control. |
| 5, 6 | D2 | Drain terminal of P-channel MOSFET - shared pins (5 & 6) reduce inductance and improve current sharing in high-speed switching. |
| 7, 8 | D1 | Drain terminal of N-channel MOSFET - shared pins (7 & 8) provide low-inductance, high-current path to load or bus. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pair in single SO8 | Eliminates layout mismatch and timing skew between channels - critical for balanced line driving and relay coil control. |
| 300 V blocking capability (both channels) | Enables direct interface with telephone line voltages (−48 V nominal, up to ±170 V ring) without external clamping. |
| Fast switching with low QGD/QG ratio | N-channel QGD/QG(tot) = 1385/6240 ≈ 22 % - reduces Miller-induced shoot-through risk in bridge configurations. |
| Matched thermal resistance per die | Identical Rth(j-sp) = 43 K/W for both transistors - ensures symmetrical junction temperature rise under balanced loading. |
| Low gate leakage (≤100 nA) | Permits high-impedance gate biasing and stable DC operation in analog switch or sample-hold circuits. |
Applications
| High-Speed Line Drivers | Line Transformer Drivers |
|---|---|
|
Use Scenario: Driving twisted-pair telecom lines in DSL modems or ISDN terminal adapters with differential signaling up to 2 MHz. IC Role / Device Role / Timing Role: N- and P-channel operate in push-pull mode to source/sink current into line impedance, delivering clean edge transitions. Use Value: 7 ns ton and 53 ns toff minimize pulse distortion; ±300 V VDS withstands line surges without protection circuitry. |
Use Scenario: Driving primary windings of isolation transformers in VoIP phones and PBX interface cards. IC Role / Device Role / Timing Role: Complementary pair switches transformer current bidirectionally, generating AC excitation without center-tapped windings. Use Value: Matched RDS(on) (6 Ω / 17 Ω) and symmetric SOAR ensure balanced saturation and minimal core remanence. |
| Relay Drivers | Universal Line Interface in Telephone Sets |
|
Use Scenario: Solid-state replacement for electromechanical relays controlling AC/DC loads in industrial control panels. IC Role / Device Role / Timing Role: N-channel switches ground return while P-channel controls high-side supply - enabling true H-bridge latching. Use Value: 1.4 A peak ID (N) and −0.9 A (P) support relay coils up to 120 Ω at 48 V; SO8 footprint simplifies PCB routing. |
Use Scenario: Implementing hybrid circuits in analog telephone handsets for 2-wire to 4-wire conversion and sidetone management. IC Role / Device Role / Timing Role: Dual FET acts as programmable impedance element and polarity-switching switch in SLIC-like functions. Use Value: VGS(th) range (±0.8–2 V) allows direct microcontroller GPIO control; low IDSS (<100 nA) preserves battery life in cordless base stations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PHD2300,118 | Same SO8 package and complementary topology, but rated for 200 V VDS (N/P) and higher ID (500 mA/−350 mA). | Better suited for lower-voltage industrial I/O modules where surge immunity <200 V suffices and higher current is needed. | Select when system voltage is ≤200 V and thermal margin for 0.5 A loads is required over PHC2300's 0.34 A limit. |
| BUK9M12-60E | Single N-channel 60 V TrenchMOS in LFPAK56; no integrated P-channel; RDS(on) = 12 mΩ at 10 V. | Designed for high-efficiency DC-DC and motor control - not a drop-in replacement due to topology and voltage mismatch. | Choose only for new designs targeting <60 V operation with ultra-low conduction loss; not suitable for telecom line interface. |
Compared with PHD2300,118, PHC2300,118 trades current capacity for higher voltage robustness (300 V vs. 200 V), making it irreplaceable in legacy telecom infrastructure. Unlike BUK9M12-60E, it provides true complementary symmetry essential for analog line interface - eliminating need for discrete P-channel matching.
Availability
PHC2300,118 is available at Aetrix Electronics and suitable for telecom line interface, relay control, and high-speed transformer driver applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for PHC2300,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.
The PHC2300,118 belongs to Nexperia's high-voltage complementary MOSFET product line, engineered specifically for telecom and industrial line interface applications demanding matched N/P characteristics and surge resilience.
FAQ
What is the maximum allowable gate-source voltage for PHC2300,118?
The absolute maximum VGS is ±20 V per channel, as specified in Table 4 (Limiting Values). Operation beyond this risks irreversible gate oxide damage. Recommended drive is ±10 V for full enhancement with margin; gate resistors should limit dV/dt to avoid ringing-induced overshoot.
Can PHC2300,118 be used in avalanche mode?
No - PHC2300,118 is not rated for repetitive avalanche operation. Its SOAR curves (Fig 2 and Fig 3) define safe non-avalanche switching boundaries only. Sustained operation near VDS = 300 V with significant current must remain within the DC and pulsed SOAR limits to prevent thermal runaway.
How are the dual drain pins (pins 5&6, 7&8) internally connected?
Pins 5 and 6 are shorted together internally as the single D2 terminal for the P-channel MOSFET; pins 7 and 8 are shorted as the single D1 terminal for the N-channel MOSFET. This dual-pin configuration lowers parasitic inductance and improves current sharing during fast switching transitions.
Is PHC2300,118 qualified for automotive applications?
No - the datasheet explicitly states qualification only for computing, communications, consumer, and industrial applications. It lacks AEC-Q101 stress testing, automotive temperature grade (−40 °C to 125 °C), and PPAP documentation. Automotive use requires explicit Nexperia automotive-grade variants such as the PHD2300AQ series.
PHC2300,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 300V
- Current - Continuous Drain (Id) @ 25°C:
- 340mA, 235mA
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 102pF @ 50V
- Power - Max:
- 1.6W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHC2300,118 FAQ
1.How can I place an order for PHC2300,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHC2300,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHC2300,118 reliable?
The price and inventory of PHC2300,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHC2300,118 is usually 5 days.
3.What payment methods are accepted for PHC2300,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHC2300,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHC2300,118?
PHC2300,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHC2300,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHC2300,118?
For technical support, including PHC2300,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHC2300,118 requirements.
6.How does Aetrix verify that PHC2300,118 is sourced from the original manufacturer or authorized distributors?
All PHC2300,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHC2300,118 meets industry standards.
7.What is the process for return or replacement of PHC2300,118?
All PHC2300,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHC2300,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHC2300,118 part is unused and in its original packaging.
Return procedure for PHC2300,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHC2300,118 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
