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Nexperia USA Inc. PHD101NQ03LT,118
- Part No.:
- PHD101NQ03LT,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
PHD101NQ03LT,118.pdf
- Description:
- MOSFET N-CH 30V 75A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,039
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Product details
Overview
PHD101NQ03LT,118 from Nexperia is a logic-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 30 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 4.5 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C. It delivers low conduction loss and simplified gate drive in high-current DC-DC converter power stages.
For engineers reviewing the PHD101NQ03LT,118 datasheet, PHD101NQ03LT,118 pinout, PHD101NQ03LT,118 application, or PHD101NQ03LT,118 equivalent, key selection criteria include logic-compatible gate threshold (1–2.5 V), avalanche ruggedness (185 mJ unclamped), thermal resistance to mounting base (0.9 K/W), and suitability for high-efficiency synchronous rectification and primary-side switching in industrial and computing power supplies.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) and fast switching with QGD = 8 nC and QG(tot) = 23 nC at VGS = 5 V, enabling efficient operation in hard-switched topologies up to several hundred kHz. Its gate threshold voltage (VGS(th)) ranges from 0.6 V at Tj = 175 °C to 2.9 V at Tj = −55 °C, ensuring reliable turn-on across temperature extremes.
The integrated source-drain diode exhibits VSD = 0.85–1.2 V at IS = 25 A and Tj = 25 °C, with trr = 37 ns and Qr = 33 nC - characteristics critical for minimizing body-diode conduction loss and reverse recovery stress in synchronous buck converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V input rail systems with margin against transients and ringing. |
| RDS(on) | 4.5 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 25 A, reducing heatsink requirements. |
| QGD | 8 nC - limits Miller-induced switching delay and improves controllability in high-dV/dt environments. |
| tr/tf | 90 ns / 33 ns - supports fast switching with low overlap loss in PWM-controlled power stages. |
| Rth(j-mb) | 0.9 K/W - allows direct thermal coupling to PCB copper pour or heatsink, enabling >100 W power handling with proper layout. |
| EAS | 185 mJ unclamped avalanche energy - provides robustness against inductive switching faults without external snubbers. |
| VGS(th) | 1.0–2.5 V @ Tj = 25 °C - ensures full enhancement with 3.3 V or 5 V logic-level drivers without level-shifting. |
Pinout & Package
PHD101NQ03LT,118 is housed in a plastic DPAK (SOT428) surface-mount package with three leads: Gate (pin 1), Drain (pin 2, internally connected to mounting base), and Source (pin 3). The metal mounting base (mb) is electrically tied to the drain terminal and serves as the primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting logic-level voltage (≥2.5 V) to fully enhance the channel; low QG enables fast, low-power driving. |
| 2 (D) + mb | Drain & Mounting Base | Main high-side current path and primary thermal interface; must be soldered to large copper area for thermal performance. |
| 3 (S) | Source | Power return node and reference for gate drive; connects to low-side switch or ground plane in buck topology. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Operates fully enhanced with 3.3 V or 5 V microcontroller GPIO, eliminating need for gate driver ICs in many applications. |
| TrenchMOS low RDS(on) | 4.5 mΩ typical reduces I²R losses by >30% vs. comparable planar MOSFETs, improving efficiency in high-current DC-DC stages. |
| Low QGD/QG(tot) | 8 nC gate-drain charge and 23 nC total gate charge minimize switching energy and enable stable operation at >500 kHz. |
| Integrated avalanche-rated structure | 185 mJ unclamped EAS withstands inductive energy during overcurrent events, enhancing system reliability without added protection components. |
| Thermally optimized DPAK package | 0.9 K/W junction-to-mounting-base resistance enables >100 W continuous dissipation when mounted on ≥25 cm² 2-oz copper with thermal vias. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Primary-side high-side switch in multiphase buck converters supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: High-current synchronous rectifier switch operating at 300–600 kHz with precise dead-time control. Use Value: Low RDS(on) and fast switching reduce conduction and switching losses, directly improving VRM efficiency by 1.2–1.8% at full load. |
Use Scenario: Output rectification in isolated 48 V-to-12 V telecom DC-DC modules used in base station power distribution. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier controlled by transformer-coupled gate drive signals. Use Value: Logic-level threshold and low QGD ensure clean turn-on/turn-off timing even with marginal gate drive amplitude, reducing cross-conduction risk. |
| Computing PSU Main Switch | Consumer Laptop Adapter |
|
Use Scenario: Primary-side switch in LLC resonant converter of 500 W ATX power supply for desktop PCs. IC Role / Device Role / Timing Role: Hard-switched main transistor handling peak currents >60 A during startup and transient load steps. Use Value: 240 A pulsed drain current rating and 185 mJ avalanche capability prevent failure during output short-circuit or overload conditions. |
Use Scenario: High-side switch in compact 65 W GaN-assisted flyback adapter for ultrabooks, where space and thermal density are constrained. IC Role / Device Role / Timing Role: Auxiliary switch managing auxiliary winding regulation and synchronous rectification timing. Use Value: DPAK footprint and 0.9 K/W Rth(j-mb) allow direct thermal attachment to adapter PCB, eliminating discrete heatsinks and saving >120 mm³ volume. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PbF | RDS(on) = 6.0 mΩ @ 10 V; higher QG = 32 nC; TO-220 package with higher Rth(j-a). | Larger footprint and inferior thermal performance limit usable current density in space-constrained PCBs. | Prefer PHD101NQ03LT,118 for SMT-based designs requiring >60 A continuous current in DPAK footprint. |
| STL110N3LLH6 | RDS(on) = 3.3 mΩ @ 10 V but requires 4.5 V min VGS; higher Ciss = 2900 pF increases gate drive loss. | Better conduction loss but slower switching and higher drive power demand in high-frequency (>400 kHz) designs. | Choose PHD101NQ03LT,118 when gate drive voltage headroom is limited or switching frequency exceeds 500 kHz. |
Compared with IRL3803PbF and STL110N3LLH6, PHD101NQ03LT,118 offers optimal balance of logic-level compatibility, thermal efficiency, and switching speed in DPAK - making it preferred for high-density, high-reliability industrial and computing power stages where board space and thermal management are critical constraints.
Availability
PHD101NQ03LT,118 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and consumer laptop adapters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for PHD101NQ03LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, diodes, and ESD protection.
PHD101NQ03LT,118 belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in computing, communications, and industrial power conversion systems.
FAQ
Is PHD101NQ03LT,118 suitable for 3.3 V microcontroller gate drive?
Yes. With VGS(th) ranging from 1.0 V to 2.5 V at 25 °C and guaranteed enhancement at VGS ≥ 4.5 V, PHD101NQ03LT,118 achieves full conduction using standard 3.3 V GPIO outputs. Its RDS(on) remains ≤7.5 mΩ at VGS = 5 V and Tj = 25 °C, supporting robust operation without external level shifters.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the normalized continuous drain current derates to ~65% at Tmb = 100 °C. Since rated ID = 75 A at Tmb = 25 °C, the practical continuous current is approximately 49 A under those thermal conditions - confirmed by the limiting value table specifying 75 A max at Tmb = 100 °C with VGS = 10 V.
Can PHD101NQ03LT,118 replace a standard 30 V MOSFET in an existing design?
Yes, provided the original part is in DPAK (SOT428) and shares identical pinout (G-D-S). PHD101NQ03LT,118 offers lower RDS(on) and faster switching than legacy planar MOSFETs like IRF3710, but gate drive timing may require minor adjustment due to reduced QGD and higher dV/dt immunity.
Does PHD101NQ03LT,118 have avalanche capability, and how is it specified?
Yes. It is rated for 185 mJ non-repetitive drain-source avalanche energy (EAS) under defined test conditions: VGS = 10 V, Tj(init) = 25 °C, ID = 43 A, Vsup ≤ 15 V, unclamped, tp = 0.19 ms, and RGS = 50 Ω - enabling reliable operation during inductive switching faults without external clamping.
PHD101NQ03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
PHD101NQ03LT,118 FAQ
1.How can I place an order for PHD101NQ03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHD101NQ03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHD101NQ03LT,118 reliable?
The price and inventory of PHD101NQ03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD101NQ03LT,118 is usually 5 days.
3.What payment methods are accepted for PHD101NQ03LT,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD101NQ03LT,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHD101NQ03LT,118?
PHD101NQ03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHD101NQ03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHD101NQ03LT,118?
For technical support, including PHD101NQ03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD101NQ03LT,118 requirements.
6.How does Aetrix verify that PHD101NQ03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHD101NQ03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD101NQ03LT,118 meets industry standards.
7.What is the process for return or replacement of PHD101NQ03LT,118?
All PHD101NQ03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD101NQ03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHD101NQ03LT,118 part is unused and in its original packaging.
Return procedure for PHD101NQ03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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