NXP Semiconductors PHD108NQ03LT,118

Overview

PHD108NQ03LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET in DPAK (SOT428) package, rated for 25 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 6.7 mΩ typical R_DS(on) at V_GS = 5 V. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC-DC converters and switch-mode power supplies.

For engineers reviewing the PHD108NQ03LT datasheet, PHD108NQ03LT pinout, PHD108NQ03LT application, or PHD108NQ03LT equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.5 V typ), low Q_gd (5.6 nC), avalanche ruggedness (180 mJ), and thermal resistance R_th(j-mb) = 0.8 K/W - critical for high-current, thermally constrained board designs.

Technical Context

This device employs TrenchMOS™ technology to achieve very low on-state resistance and low gate charge. Its gate-source threshold voltage of 1.5 V (typ) enables direct drive from 3.3 V or 5 V logic without level shifting, while its 25 V drain-source rating targets 12 V and 24 V input systems.

The mounting base is internally connected to the drain terminal, enabling low-inductance thermal and electrical connection to heatsinks or PCB copper planes. Its safe operating area supports peak drain currents up to 240 A with pulse width ≤10 µs, and it features an integrated source-drain diode with 34 ns reverse recovery time and 21 nC recovered charge.

Key Specifications

Pinout & Package

PHD108NQ03LT uses the DPAK (SOT428) plastic surface-mount package with three leads (one lead cropped). The mounting base is electrically connected to the drain and serves as the primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL110N3LLH6 and IRL3803PBF, PHD108NQ03LT offers optimal balance of logic-level drive, DPAK surface-mount compatibility, and 25 V rating for cost-sensitive 12 V DC-DC and PSU designs - delivering lowest gate drive complexity without sacrificing thermal performance or avalanche robustness.

Availability

PHD108NQ03LT is available at Aetrix Electronics and suitable for DC-DC converters, switch-mode power supplies, and automotive body electronics requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHD108NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in high-performance analog, logic, and power devices for automotive, industrial, and consumer markets.

PHD108NQ03LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, designed specifically for high-efficiency, low-voltage switching applications where gate drive simplicity, thermal performance, and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PHD108NQ03LT at 100 °C mounting base temperature?

The PHD108NQ03LT supports 75 A continuous drain current at T_mb = 100 °C with V_GS = 5 V, as specified in Table 3 of the datasheet. This rating assumes proper thermal management via the mounting base and accounts for R_DS(on) increase at elevated temperature - no derating is required between 25 °C and 100 °C mounting base conditions.

Is PHD108NQ03LT suitable for 3.3 V microcontroller gate drive without a level shifter?

Yes, PHD108NQ03LT is explicitly designed for logic-level operation: its typical gate-source threshold voltage is 1.5 V, and it achieves full enhancement with 3.3 V gate drive, delivering 6.7 mΩ R_DS(on) at 25 A. This eliminates the need for external level shifters or gate driver ICs in 3.3 V control architectures.

Does PHD108NQ03LT have an integrated body diode, and what are its key parameters?

Yes, PHD108NQ03LT includes an integrated source-drain diode. Key parameters include 75 A DC forward current rating, 240 A peak forward current, 0.86 V typical forward voltage at 25 A, 34 ns reverse recovery time, and 21 nC recovered charge - making it suitable for synchronous rectification and freewheeling in hard-switched topologies.

What is the thermal resistance from junction to mounting base for PHD108NQ03LT?

The PHD108NQ03LT has a maximum thermal resistance of R_th(j-mb) = 0.8 K/W from junction to mounting base, as stated in Table 4. This value enables efficient heat transfer to external heatsinks or PCB copper planes, supporting up to 187 W total power dissipation at T_mb = 25 °C.

Can PHD108NQ03LT be used in avalanche-mode switching applications?

Yes, PHD108NQ03LT is rated for non-repetitive drain-source avalanche energy of 180 mJ under defined test conditions (ID = 43 A, tp = 0.25 ms, VDD ≤25 V). This ruggedness supports reliable operation in inductive switching applications such as motor drives and flyback converters without external avalanche clamping.