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NXP Semiconductors PHD14NQ20T,118
- Part No.:
- PHD14NQ20T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
PHD14NQ20T,118.pdf
- Description:
- MOSFET N-CH 200V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,640
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Product details
Overview
PHD14NQ20T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT428 (D-PAK) package, rated for 200 V drain-source voltage, 14 A continuous drain current at Tmb = 25 °C, and on-state resistance ≤230 mΩ at VGS = 10 V and Tj = 25 °C. It delivers fast switching and low conduction loss in DC-DC converters and general-purpose switching circuits.
For engineers reviewing the PHD14NQ20T datasheet, PHD14NQ20T pinout, PHD14NQ20T application, or PHD14NQ20T equivalent, this page provides verified pin configuration, thermal resistance (Rth(j-mb) = 1.2 K/W), avalanche ruggedness (70 mJ), gate charge (38 nC), and diode recovery characteristics (trr = 135 ns, Qr = 690 nC) critical for hard-switching and inductive load designs.
Technical Context
This device uses TrenchMOS™ technology to achieve low RDS(on) and high transconductance (gfs = 12.1 S typical). Its gate threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, supporting robust gate drive across temperature.
The integrated source-drain diode exhibits VSD = 1.0–1.5 V at IS = 14 A and trr = 135 ns under dIS/dt = −100 A/µs, enabling use in freewheeling paths without external diodes in many mid-power topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 170 V DC in offline or industrial SMPS with margin. |
| ID (continuous) | 14 A at Tmb = 25 °C - enables 200–300 W non-isolated DC-DC stages with appropriate heatsinking. |
| RDS(on) | ≤230 mΩ at VGS = 10 V, Tj = 25 °C - limits conduction loss to <1.1 W at 10 A, reducing thermal burden. |
| Qg(tot) | 38 nC - determines gate driver power requirement (~380 µC total charge per full cycle at 10 kHz). |
| tr/tf | 40 ns / 31 ns - enables switching frequencies up to ~500 kHz before significant switching loss dominates. |
| EAS | 70 mJ - allows safe operation under unclamped inductive switching events with ID = 14 A and VDD ≤25 V. |
| Rth(j-mb) | 1.2 K/W - enables direct mounting to heatsink; junction-to-base thermal drop is only 1.2 °C per watt. |
Pinout & Package
SOT428 (D-PAK) surface-mount plastic package with isolated mounting base electrically connected to drain (pin 2); pin 2 is not accessible for external connection in SOT428 per datasheet note [1].
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≥10 V drive for full enhancement; gate leakage <100 nA ensures low standby current. |
| 2 | Drain (D) | Main high-side power path; internally bonded to mounting base - must be thermally and electrically connected to heatsink. |
| 3 | Source (S) | Power return and reference node; forms common node for gate drive and current sensing in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ process | Enables lower RDS(on) vs planar MOSFETs of same die size - improves power density in space-constrained designs. |
| Fast switching (tr/tf ≤40/31 ns) | Reduces transition losses in high-frequency converters; complements synchronous rectification timing requirements. |
| Integrated source-drain diode | Eliminates need for external freewheeling diode in buck, flyback, and half-bridge topologies with moderate dI/dt. |
| Avalanche-rated (EAS = 70 mJ) | Supports reliable operation in inductive load switching without snubbers - critical for motor drive and relay control. |
| Wide VGS range (±20 V) | Allows robust gate drive design with margin against transients; compatible with standard 12–15 V logic-level drivers. |
Applications
| DC-DC Converters | Motor Drive Stages |
|---|---|
Use Scenario: Step-down (buck) converter in industrial PLC power supplies delivering 24 V/10 A from 48 V bus. IC Role / Device Role / Timing Role: Low-side synchronous switch handling high-current, high-duty-cycle conduction. Use Value: RDS(on) ≤230 mΩ minimizes I²R loss; 125 W Ptot rating supports sustained operation with PCB copper heatsinking. |
Use Scenario: Half-bridge leg driving 120 V, 5 A brushed DC motor in automated valve actuator. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge with PWM frequency up to 20 kHz. Use Value: Avalanche ruggedness (70 mJ) absorbs inductive kickback during commutation; trr = 135 ns prevents shoot-through in complementary drive. |
| AC-DC Auxiliary Supplies | General-Purpose Power Switching |
Use Scenario: Auxiliary 12 V/2 A supply in 3 kW server PSU, powered from main DC bus via flyback topology. IC Role / Device Role / Timing Role: Primary-side switch operating at 65–100 kHz with discontinuous conduction mode. Use Value: Low Qg (38 nC) reduces gate driver losses; Ciss = 1500 pF enables stable operation with standard RC snubbers. |
Use Scenario: Solid-state relay replacement in HVAC control panel switching 200 V AC resistive loads up to 10 A. IC Role / Device Role / Timing Role: Direct load switch controlled by microcontroller GPIO with optocoupler isolation. Use Value: VDS = 200 V provides safety margin over 230 V RMS mains; 14 A ID rating covers peak surge currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NF20 | Same VDS (200 V), higher RDS(on) (280 mΩ typ), TO-220 package only - no SOT428 option. | Limited to through-hole assembly; higher conduction loss increases thermal demand in compact layouts. | Select when legacy TO-220 footprint is required and board space permits larger heatsink area. |
| IRF640NPBF | Lower VDS (200 V), higher RDS(on) (180 mΩ min but 220 mΩ typical), D-PAK (TO-252) package - pin-compatible with PHD14NQ20T. | Similar thermal interface but lacks specified avalanche energy rating; not qualified for unclamped inductive switching. | Acceptable for low-stress switching where avalanche stress is absent; verify layout compatibility with identical SOT428 footprint. |
Compared with STP14NF20 and IRF640NPBF, PHD14NQ20T offers lower RDS(on), guaranteed avalanche ruggedness, and native SOT428 surface-mount compatibility - making it preferable for space-constrained, high-reliability DC-DC and motor control applications requiring robust transient handling.
Availability
PHD14NQ20T is available at Aetrix Electronics and suitable for DC-DC converters, motor drive stages, and general-purpose power switching requiring stable component supply across industrial, automation, and embedded power system programs.
Supply support for PHD14NQ20T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog, logic, and power semiconductor solutions with deep heritage in automotive, industrial, and consumer power management.
The PHD14NQ20T belongs to the TrenchMOS™ standard-level power MOSFET family, engineered for cost-effective, high-efficiency switching in mid-power industrial and embedded power conversion systems.
FAQ
What is the maximum continuous drain current rating for PHD14NQ20T at 100 °C mounting base temperature?
The PHD14NQ20T supports 10 A continuous drain current (ID) at Tmb = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the SOT428 package and must be applied in thermal design calculations for sustained operation. The full 14 A rating applies only at Tmb = 25 °C.
Is PHD14NQ20T pin-compatible with other D-PAK MOSFETs like IRF640NPBF?
Yes, PHD14NQ20T uses the SOT428 (D-PAK / TO-252) package with standard 3-pin layout (G-D-S), matching the physical footprint and pin assignment of IRF640NPBF. However, electrical differences - including RDS(on), gate charge, and avalanche rating - require circuit validation before substitution.
Does PHD14NQ20T include an integrated body diode, and what are its key parameters?
Yes, PHD14NQ20T features an integrated source-drain diode with forward voltage VSD = 1.0–1.5 V at IS = 14 A and reverse recovery time trr = 135 ns under dIS/dt = −100 A/µs. These values enable use in freewheeling roles without external diodes in many buck and flyback designs.
What is the thermal resistance from junction to mounting base (Rth(j-mb)) for PHD14NQ20T?
The PHD14NQ20T has a maximum Rth(j-mb) of 1.2 K/W, as stated in Table 3. This value assumes proper thermal interface between the mounting base (pin 2/drain) and heatsink, and is critical for calculating junction temperature rise under load: Tj = Tmb + (Pdiss × 1.2).
Can PHD14NQ20T be used in avalanche mode, and what is its rated non-repetitive avalanche energy?
Yes, PHD14NQ20T is rated for non-repetitive avalanche operation with EAS = 70 mJ under specified conditions (unclamped inductive load, ID = 14 A, VDD ≤25 V, RGS = 50 Ω, VGS = 10 V, starting Tj = 25 °C). This rating supports reliable operation during inductive turn-off transients in motor and solenoid drivers.
PHD14NQ20T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 230mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
PHD14NQ20T,118 FAQ
1.How can I place an order for PHD14NQ20T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHD14NQ20T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHD14NQ20T,118 reliable?
The price and inventory of PHD14NQ20T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD14NQ20T,118 is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHD14NQ20T,118?
For technical support, including PHD14NQ20T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD14NQ20T,118 requirements.
6.How does Aetrix verify that PHD14NQ20T,118 is sourced from the original manufacturer or authorized distributors?
All PHD14NQ20T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD14NQ20T,118 meets industry standards.
7.What is the process for return or replacement of PHD14NQ20T,118?
All PHD14NQ20T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD14NQ20T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHD14NQ20T,118 part is unused and in its original packaging.
Return procedure for PHD14NQ20T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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