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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PHD16N03LT,118

Name: PHD16N03LT,118
Brand: NXP Semiconductors
SKU: PHD16N03LT,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHD16N03LT,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PHD16N03LT,118.pdf

Description:: MOSFET N-CH 30V 16A DPAK

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Product details

Overview

PHD16N03LT from NXP Semiconductors (formerly Philips) is a logic-level N-channel TrenchMOS™ power MOSFET in SOT428 (D-PAK) package, rated for 30 V V_DS, 16 A I_D (T_mb = 25 °C), 67 mΩ R_DS(on) at V_GS = 10 V, and 32.6 W P_tot. It serves as a low-side switching element in DC-to-DC converters and general-purpose load control circuits where gate drive compatibility with 3.3 V/5 V logic is required.

For engineers reviewing the PHD16N03LT datasheet, PHD16N03LT pinout, PHD16N03LT application, or PHD16N03LT equivalent, key selection criteria include its logic-level V_GS(th) (1–2 V), fast switching performance (t_d(on) = 8 ns, t_f = 5 ns), thermal resistance to mounting base (R_th(j-mb) = 4.6 K/W), and robust SOA for pulsed operation up to 32 A.

Technical Context

This device employs TrenchMOS™ technology to achieve low R_DS(on) while maintaining stable threshold voltage across temperature (V_GS(th) = 0.5–2.2 V from −55 °C to +175 °C). Its gate charge profile (Q_g(tot) = 8.5 nC, Q_gd = 2 nC) supports efficient high-frequency switching in synchronous buck stages.

The integrated source-drain diode exhibits V_SD = 0.98–1.2 V at I_S = 10 A and is rated for 16 A continuous forward current. Thermal design centers on the mounting base (MB), which is electrically connected to the drain and provides the primary heat path with R_th(j-mb) = 4.6 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines upper limit of input/output rail voltage in switch-mode applications.
I_D (DC)	16 A at T_mb = 25 °C - Continuous current capability when mounted on heatsink; derates to 11.3 A at T_mb = 100 °C.
R_DS(on)	50–67 mΩ at V_GS = 10 V, T_j = 25 °C - On-resistance directly determines conduction loss and junction temperature rise under load.
V_GS(th)	1–2 V at T_j = 25 °C - Logic-level threshold enables full enhancement with 3.3 V or 5 V gate drive without level-shifting.
Q_g(tot)	8.5 nC - Total gate charge dictates driver strength requirement and switching energy loss in hard-switched topologies.
R_th(j-mb)	4.6 K/W - Thermal resistance from junction to mounting base; enables direct heatsink attachment for high-power dissipation.
t_f	5 ns - Fall time at V_DD = 15 V, R_G = 5.6 Ω; critical for minimizing turn-off losses in high-frequency converters.

Pinout & Package

SOT428 (D-PAK) plastic surface-mount package with three leads (one lead cropped); mounting base (MB) is integral to the package and electrically connected to the drain terminal. The package measures 10.4 × 6.73 × 2.55 mm (L × W × H) and is optimized for PCB heatsinking via the exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control electrode; requires ≤±15 V gate-source voltage; low input capacitance (C_iss = 210 pF) eases driver design.
2	Drain (D)	Main current-carrying terminal; internally bonded to mounting base (MB); not accessible externally per datasheet note [1].
3	Source (S)	Reference node for gate drive and current return path; forms common connection point with driver ground in low-side configurations.
MB	Mounting Base (Drain)	Exposed copper pad on underside; electrically tied to drain; primary thermal interface to heatsink or copper pour.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1–2 V enables direct drive from microcontrollers and PWM controllers operating at 3.3 V or 5 V.
Low R_DS(on) at 4.5 V	76–100 mΩ at V_GS = 4.5 V ensures usable on-state performance even with marginal gate drive headroom.
Fast switching speed	8 ns turn-on delay and 5 ns fall time reduce switching losses in DC-DC converters operating above 100 kHz.
Robust safe operating area	Supports 32 A peak drain current (t_p ≤ 10 µs) and withstands avalanche energy in inductive load switching.
Integrated source-drain diode	Rated for 16 A continuous forward current with V_SD = 0.98–1.2 V; suitable for freewheeling in non-synchronous topologies.

Applications

DC-DC Buck Converter	Motor Drive Half-Bridge
Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output step-down converter in embedded power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET controlled by PWM controller's phase-output signal. Use Value: 67 mΩ R_DS(on) minimizes conduction loss at 10–15 A loads; logic-level gate allows direct interface with controller's 5 V gate driver output.	Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM-based speed regulation. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20–50 kHz. Use Value: Fast t_f = 5 ns and low Q_gd = 2 nC reduce cross-conduction losses; 32 A peak rating handles motor stall currents.
LED Constant-Current Driver	Hot-Swap Load Switch
Use Scenario: Dimmable LED string driver using constant-current buck topology with analog/PWM dimming. IC Role / Device Role / Timing Role: Power switch modulating average current through high-brightness LEDs. Use Value: Stable R_DS(on) over temperature ensures consistent current regulation; low V_GS(th) simplifies gate bias network.	Use Scenario: Inrush-limited 12 V board-level power distribution with fault protection and soft-start. IC Role / Device Role / Timing Role: Main pass element in discrete hot-swap circuit with external current-sense and gate control. Use Value: 30 V V_DS rating accommodates 12 V rail plus transients; MB-connected drain simplifies Kelvin sensing of load current.

DC-DC Buck Converter

Motor Drive Half-Bridge

Use Scenario: High-efficiency 12 V input to 3.3 V/5 V output step-down converter in embedded power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET controlled by PWM controller's phase-output signal.

Use Value: 67 mΩ R_DS(on) minimizes conduction loss at 10–15 A loads; logic-level gate allows direct interface with controller's 5 V gate driver output.

Use Scenario: 24 V brushed DC motor control in industrial actuators with PWM-based speed regulation.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at 20–50 kHz.

Use Value: Fast t_f = 5 ns and low Q_gd = 2 nC reduce cross-conduction losses; 32 A peak rating handles motor stall currents.

LED Constant-Current Driver

Hot-Swap Load Switch

Use Scenario: Dimmable LED string driver using constant-current buck topology with analog/PWM dimming.

IC Role / Device Role / Timing Role: Power switch modulating average current through high-brightness LEDs.

Use Value: Stable R_DS(on) over temperature ensures consistent current regulation; low V_GS(th) simplifies gate bias network.

Use Scenario: Inrush-limited 12 V board-level power distribution with fault protection and soft-start.

IC Role / Device Role / Timing Role: Main pass element in discrete hot-swap circuit with external current-sense and gate control.

Use Value: 30 V V_DS rating accommodates 12 V rail plus transients; MB-connected drain simplifies Kelvin sensing of load current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF03L	Same V_DS (30 V), higher R_DS(on) (80 mΩ typ), TO-220 package, no mounting-base thermal path.	Requires external heatsink; less suitable for space-constrained SMT designs needing low-profile thermal management.	Select when through-hole assembly is preferred and PCB heatsinking is impractical.
IRLZ34NPBF	Same V_DS (30 V), slightly higher R_DS(on) (55 mΩ typ at V_GS = 10 V), TO-220AB package, higher R_th(j-a).	Lacks integrated mounting base; thermal performance relies on case-to-heatsink interface rather than direct PCB copper coupling.	Choose when legacy TO-220 footprint compatibility is required and thermal budget permits higher junction rise.

Compared with STP16NF03L and IRLZ34NPBF, PHD16N03LT offers superior thermal coupling via its D-PAK mounting base and lower R_DS(on), enabling higher power density in compact SMT power stages without external heatsinks.

Availability

PHD16N03LT is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and hot-swap load switches requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and embedded programs.

Supply support for PHD16N03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.

The PHD16N03LT belongs to NXP's TrenchMOS™ logic-level power MOSFET family, engineered for high-efficiency, low-voltage switching in space- and thermally constrained power conversion systems.

FAQ

What is the maximum gate-source voltage rating for PHD16N03LT?

The PHD16N03LT has a maximum gate-source voltage (V_GS) rating of ±15 V, as specified in the Absolute Maximum Ratings table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive circuits should be clamped to stay within this range, especially during transient conditions or when using bootstrap gate drivers in high-side configurations.

Can PHD16N03LT be used in a high-side switch configuration?

No - PHD16N03LT is an N-channel MOSFET with its mounting base tied to the drain, making it unsuitable for standard high-side switching without a floating gate driver. Its logic-level threshold and low R_DS(on) are optimized for low-side use, such as synchronous rectification or ground-referenced load control. For high-side applications, a P-channel device or N-channel with isolated gate drive is required.

What is the thermal resistance from junction to mounting base for PHD16N03LT?

The PHD16N03LT has a maximum thermal resistance from junction to mounting base (R_th(j-mb)) of 4.6 K/W, as stated in Table 4. This value assumes proper soldering of the mounting base to a sufficiently sized copper area or heatsink. Effective thermal design must account for solder voiding, interface material, and PCB copper thickness to approach this spec.

Does PHD16N03LT have avalanche capability?

The PHD16N03LT datasheet does not specify rated single-pulse avalanche energy (E_AS) or repetitive avalanche characteristics. While the device can withstand limited unclamped inductive switching events due to its SOA, it is not characterized or guaranteed for avalanche operation. Designers should implement snubbers or clamp circuits to avoid relying on untested avalanche behavior in PHD16N03LT.

Is PHD16N03LT RoHS compliant?

Yes - PHD16N03LT was manufactured under Philips' RoHS-compliant processes prior to the 2004 datasheet release, and NXP maintains compliance for legacy parts through controlled material declarations. Aetrix Electronics supplies only RoHS-compliant versions of PHD16N03LT, verified via lot-level material documentation and supplier certification.

PHD16N03LT,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 67mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 10 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 210 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 32.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PHD16N03LT,118 FAQ

1.How can I place an order for PHD16N03LT,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHD16N03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHD16N03LT,118 reliable?

The price and inventory of PHD16N03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD16N03LT,118 is usually 5 days.

3.What payment methods are accepted for PHD16N03LT,118?

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PHD16N03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHD16N03LT,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHD16N03LT,118?

For technical support, including PHD16N03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD16N03LT,118 requirements.

6.How does Aetrix verify that PHD16N03LT,118 is sourced from the original manufacturer or authorized distributors?

All PHD16N03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD16N03LT,118 meets industry standards.

7.What is the process for return or replacement of PHD16N03LT,118?

All PHD16N03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD16N03LT,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHD16N03LT,118 part is unused and in its original packaging.

Return procedure for PHD16N03LT,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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