NXP Semiconductors PHD18NQ10T,118

Overview

PHD18NQ10T from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS power transistor in SOT428 (DPAK) surface-mount package, rated for 100 V drain-source voltage, 18 A continuous drain current at 25 °C, and ≤90 mΩ on-state resistance at V_GS = 10 V. It serves as a high-efficiency switching element in d.c.-to-d.c. converters and switched-mode power supplies.

For engineers reviewing the PHD18NQ10T datasheet, PHD18NQ10T pinout, PHD18NQ10T application, or PHD18NQ10T equivalent, key selection criteria include its low R_DS(ON), fast switching performance (t_d(on) = 6 ns, t_f = 12 ns), avalanche energy rating (70 mJ), thermal resistance (R_{th j-mb} = 1.9 K/W), and DPAK footprint compatibility with board-level thermal management.

Technical Context

This device employs trench-gate MOSFET technology to achieve low conduction loss and high switching speed. Its gate threshold voltage (V_GS(TO)) ranges from 2 V to 4 V at 25 °C, enabling robust drive with standard 10 V logic-level gate signals. The integrated body diode supports synchronous rectification and freewheeling operation.

The PHD18NQ10T features low internal inductances (L_d = 4.5 nH, L_s = 7.5 nH in SOT78; values scaled for SOT428), minimized Miller charge (Q_gd = 8 nC), and optimized capacitance profile (C_iss = 633 pF, C_oss = 103 pF) - all critical for high-frequency hard-switched topologies up to several hundred kHz.

Key Specifications

Pinout & Package

SOT428 (DPAK) surface-mount plastic package with isolated tab connected to drain; 3-terminal configuration optimized for thermal and electrical performance in power conversion layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP18NF10 and IRF540NPBF, the PHD18NQ10T delivers superior power density via its DPAK package, lower switching losses from reduced Q_g and Q_gd, and guaranteed avalanche ruggedness - making it the preferred choice for modern compact, high-efficiency, high-reliability SMPS designs.

Availability

PHD18NQ10T is available at Aetrix Electronics and suitable for d.c.-to-d.c. converters, switched-mode power supplies, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHD18NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance analog, logic, and power devices, with roots in Philips' semiconductor division and deep expertise in automotive, industrial, and power management solutions.

The PHD18NQ10T belongs to NXP's TrenchMOS power transistor family, engineered specifically for high-efficiency, high-reliability switching applications in industrial power supplies, motor controls, and LED drivers where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for PHD18NQ10T at 100 °C mounting base temperature?

The PHD18NQ10T supports 13 A continuous drain current at T_mb = 100 °C with V_GS = 10 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT428 package and must be applied in thermal design calculations to ensure junction temperature remains below 175 °C. The PHD18NQ10T's R_{th j-mb} of 1.9 K/W enables this current level with appropriate PCB copper area or heatsink attachment.

Does PHD18NQ10T have avalanche capability, and what is its rated energy?

Yes, the PHD18NQ10T is fully avalanche-rated per IEC 134 standards, with a non-repetitive avalanche energy (E_AS) of 70 mJ under specified test conditions (unclamped inductive load, I_AS = 11 A, t_p = 100 µs). This capability allows the PHD18NQ10T to safely absorb inductive energy spikes without external protection, a key advantage over non-avalanche-rated MOSFETs like IRF540NPBF.

What is the gate threshold voltage range for PHD18NQ10T, and how does it vary with temperature?

The PHD18NQ10T has a gate threshold voltage (V_GS(TO)) of 2–4 V at T_j = 25 °C, narrowing to 1–6 V across the full operating range (−55 °C to 175 °C). This wide but well-characterized spread ensures reliable turn-on with standard 10 V gate drivers while maintaining immunity to false triggering at high temperature - a critical behavior confirmed in the Electrical Characteristics section of the datasheet.

Can PHD18NQ10T be used in synchronous rectification configurations?

Yes, the PHD18NQ10T supports synchronous rectification via its integrated body diode, which exhibits a forward voltage (V_SD) of 0.92–1.2 V at 18 A and low reverse recovery charge (Q_rr = 135 nC). When actively driven, the PHD18NQ10T achieves lower conduction loss than discrete Schottky diodes in 12–48 V output stages, especially above 5 A load current - verified in the Reverse Diode Characteristics section.

What is the thermal resistance from junction to mounting base (R_{th j-mb}) for PHD18NQ10T, and why is it important?

The PHD18NQ10T has a typical R_{th j-mb} of 1.9 K/W, measured from silicon junction to the metal tab (drain connection). This low value is essential because it directly determines how much power can be dissipated without exceeding the 175 °C maximum junction temperature - enabling >70 W continuous operation with a modest heatsink. Unlike R_{th j-a}, R_{th j-mb} is independent of PCB layout and forms the basis for accurate thermal modeling in power designs using the PHD18NQ10T.