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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHD20N06T,118

Name: PHD20N06T,118
Brand: Nexperia USA Inc.
SKU: PHD20N06T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHD20N06T,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PHD20N06T,118.pdf

Description:: MOSFET N-CH 55V 18A DPAK

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Product details

Overview

PHD20N06T from Nexperia is a standard-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 55 V V_DS, 18 A continuous drain current at T_mb = 25 °C, and 65 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and SMPS primary-side switching.

For engineers reviewing the PHD20N06T datasheet, PHD20N06T pinout, PHD20N06T application, or PHD20N06T equivalent, this device is selected for its validated thermal resistance (R_th(j-mb) = 2.9 K/W), robust avalanche energy rating (36 mJ), and gate charge profile (Q_G(tot) = 11 nC, Q_GD = 6 nC) critical for synchronous rectification and hard-switched topologies.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) while maintaining stable threshold voltage (V_GS(th) = 2–4 V at 25 °C) across temperature. Its internal drain and source inductances (L_D = 2.5 nH, L_S = 7.5 nH) are specified for accurate switching waveform modeling in high-frequency designs.

The device features an integrated body diode with V_SD = 0.85–1.2 V at I_S = 10 A and t_rr = 32 ns under defined conditions, enabling use in freewheeling paths where reverse recovery behavior impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V input systems with margin
I_D (continuous)	18 A at T_mb = 25 °C - Supports ≥100 W power stages with standard heatsinking
R_DS(on)	65 mΩ typ at V_GS = 10 V, T_j = 25 °C - Enables <1.2 W conduction loss at 10 A
Q_GD	6 nC - Low gate-drain charge minimizes Miller-induced switching delay in hard-switched circuits
R_th(j-mb)	2.9 K/W - Direct thermal path to mounting base enables compact PCB thermal design
E_AS	36 mJ - Unclamped inductive avalanche rating supports reliable operation during transient overloads
C_iss	316–422 pF - Input capacitance defines gate drive strength requirement for 500 kHz+ operation

Pinout & Package

PHD20N06T uses the SOT428 (DPAK) plastic surface-mount package with exposed mounting base electrically connected to the drain terminal. The package supports high-power dissipation via direct PCB copper thermal pad contact.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires 10 V drive for full enhancement; gate leakage <100 nA at ±20 V
2 (D)	Drain	Main high-side current path; internally bonded to mounting base for thermal and electrical connection
3 (S)	Source	Reference node for gate drive; source inductance 7.5 nH affects switching ringing and dI/dt control
Mounting Base (mb)	Drain Thermal & Electrical Node	Exposed copper pad tied to drain; must be soldered to ≥200 mm² copper area for rated P_tot = 51 W

Key Features

Feature	Design Value
Low R_DS(on)	65 mΩ @ 10 V, 25 °C - Reduces conduction loss by >30% vs. comparable 60 V MOSFETs in same package
Fast switching	t_r = 50 ns, t_f = 40 ns - Enables efficient operation up to 1 MHz in resonant and hard-switched topologies
Avalanche ruggedness	36 mJ non-repetitive E_AS - Withstands single-pulse inductive transients without failure in unclamped flyback or LLC circuits
Thermal performance	R_th(j-mb) = 2.9 K/W - Allows junction temperature rise of only 148 °C at 51 W dissipation, supporting 175 °C T_j max

Applications

DC-DC Converters

Switched-Mode Power Supplies

Use Scenario: Step-down (buck) converter in telecom intermediate bus architecture with 36–57 V input.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with synchronous rectification.

Use Value: 65 mΩ R_DS(on) and 11 nC total gate charge enable >94% efficiency at 20 A output while minimizing gate driver losses.

Use Scenario: Main switch in 65 W AC-DC adapter using quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: High-voltage switching transistor handling 55 V clamp and 18 A peak currents.

Use Value: 36 mJ avalanche energy rating ensures reliability during output short-circuit events without snubber redesign.

Industrial Motor Drives

LED Driver Circuits

Use Scenario: Half-bridge leg in 24 V BLDC gate driver module for HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 40 ns) to minimize shoot-through risk.

Use Value: 7.5 nH source inductance and 2.5 nH drain inductance support precise timing control in 20–100 kHz PWM commutation.

Use Scenario: Constant-current switch in high-bay LED driver with 48 V bus and 1.5 A load.

IC Role / Device Role / Timing Role: PWM-controlled current regulator with duty-cycle modulation up to 10 kHz.

Use Value: 154 mΩ R_DS(on) at 175 °C ensures stable current regulation across ambient temperatures up to 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60	600 V rating, higher R_DS(on) (180 mΩ), TO-220 package	Designed for offline SMPS; unsuitable for 48 V bus due to excessive conduction loss	Select only if higher voltage blocking is required; not drop-in for PHD20N06T footprint or thermal profile
IRFZ44NPBF	55 V rating, 28 mΩ R_DS(on), TO-220 package, no avalanche rating specified	Lacks documented E_AS; requires external clamping in inductive loads	Prefer for cost-sensitive low-temp applications; avoid in unclamped inductive switching without validation

Compared with STP20NM60 and IRFZ44NPBF, PHD20N06T offers optimal balance of low R_DS(on), verified avalanche capability, and DPAK thermal performance-making it uniquely suited for space-constrained, high-reliability 48 V power conversion where board area and transient robustness are critical.

Availability

PHD20N06T is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for PHD20N06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with manufacturing rooted in process control and automotive-grade quality standards.

PHD20N06T belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered for high-efficiency, high-frequency switching in computing, communications, consumer, and industrial power systems.

FAQ

What is the maximum continuous drain current for PHD20N06T at 100 °C mounting base temperature?

The maximum continuous drain current is 13 A at T_mb = 100 °C, per Figure 1 in the datasheet. This derating reflects thermal limits imposed by the DPAK package's ability to transfer heat from junction to mounting base, not silicon capability alone.

Does PHD20N06T have a specified avalanche energy rating, and under what test conditions?

Yes-non-repetitive drain-source avalanche energy E_AS is 36 mJ, measured at V_GS = 10 V, T_j = 25 °C, I_D = 6 A, R_GS = 50 Ω, and V_sup ≤55 V with unclamped inductive load, as defined in Table 4.

Can PHD20N06T be used with gate drive voltages below 10 V, and what is its threshold behavior?

Yes-V_GS(th) ranges from 1 V (min at T_j = 175 °C) to 4.4 V (max at T_j = −55 °C). At V_GS = 5 V, R_DS(on) rises significantly (>300 mΩ); full enhancement requires ≥8 V for reliable 18 A operation.

Is the mounting base electrically isolated, and how should it be handled in PCB layout?

No-the mounting base is internally connected to the drain terminal. In PCB layout, it must be routed as part of the high-voltage drain net and thermally connected to ≥200 mm² of copper pour; isolation from other nets is mandatory to prevent breakdown or thermal shorts.

PHD20N06T,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 77mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 422 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 51W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PHD20N06T,118 FAQ

1.How can I place an order for PHD20N06T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHD20N06T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHD20N06T,118 reliable?

The price and inventory of PHD20N06T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD20N06T,118 is usually 5 days.

3.What payment methods are accepted for PHD20N06T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD20N06T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHD20N06T,118?

PHD20N06T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHD20N06T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHD20N06T,118?

For technical support, including PHD20N06T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD20N06T,118 requirements.

6.How does Aetrix verify that PHD20N06T,118 is sourced from the original manufacturer or authorized distributors?

All PHD20N06T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD20N06T,118 meets industry standards.

7.What is the process for return or replacement of PHD20N06T,118?

All PHD20N06T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD20N06T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHD20N06T,118 part is unused and in its original packaging.

Return procedure for PHD20N06T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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