NXP Semiconductors PHD21N06LT,118

Overview

PHD21N06LT,118 from Nexperia is an N-channel TrenchMOS™ logic-level power MOSFET in SOT428 (DPAK) package, rated for 55 V V_DSS, 19 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 75 mΩ at V_GS = 5 V. It serves as a high-efficiency switching element in DC-DC converters and switched-mode power supplies.

For engineers reviewing the PHD21N06LT,118 datasheet, PHD21N06LT,118 pinout, PHD21N06LT,118 application, or PHD21N06LT,118 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low thermal resistance (R_{th j-mb} = 2.7 K/W), avalanche energy rating (E_AS = 34 mJ), and surface-mount DPAK footprint suitability for high-power density board layouts.

Technical Context

This device employs trench-gate technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g(tot) = 9.4 nC). Its gate threshold voltage (V_GS(TO)) remains stable across temperature (0.5–2.3 V), enabling robust turn-on control under varying thermal conditions.

The integrated body diode supports synchronous rectification with V_SD = 1.2–1.5 V at I_F = 20 A and t_rr = 43 ns, while internal inductances (L_d = 3.5–4.5 nH, L_s = 7.5 nH) are specified for accurate switching loss modeling in hard-switched topologies.

Key Specifications

Pinout & Package

SOT428 (DPAK) surface-mount package with isolated tab (drain-connected), 3-terminal configuration optimized for thermal performance and automated assembly. Mounting base contact area supports direct PCB copper thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP20NM50FP and IRF3708PBF, PHD21N06LT,118 uniquely combines logic-level drive, DPAK surface-mount form factor, 34 mJ avalanche rating, and 9.4 nC gate charge-making it optimal for compact, high-frequency, thermally constrained DC-DC and motor drive applications requiring gate simplicity and reliability.

Availability

PHD21N06LT,118 is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor control circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PHD21N06LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PHD21N06LT,118 belongs to Nexperia's TrenchMOS™ logic-level PowerMOS family, engineered specifically for high-efficiency, space-constrained power conversion where low gate drive voltage, fast switching, and rugged avalanche operation are essential.

FAQ

What is the maximum gate-source voltage rating for PHD21N06LT,118?

The absolute maximum gate-source voltage (V_GS) for PHD21N06LT,118 is ±15 V under continuous conditions, with a pulsed rating of ±20 V (V_GSM) at T_j ≤ 150 °C. Exceeding these limits risks permanent gate oxide damage. PHD21N06LT,118 must be driven within this window even during transient events, especially when used with bootstrap gate drivers in half-bridge configurations.

Does PHD21N06LT,118 have a specified avalanche energy rating?

Yes, PHD21N06LT,118 has a non-repetitive avalanche energy rating (E_AS) of 34 mJ under defined test conditions: unclamped inductive load, I_AS = 9.7 A, t_p = 100 µs, V_DD ≤ 25 V, R_GS = 50 Ω, and V_GS = 5 V. This rating is confirmed in the official Nexperia datasheet and validates its use in inductive switching applications without external snubbers.

What is the thermal resistance junction-to-mounting-base for PHD21N06LT,118?

The maximum thermal resistance from junction to mounting base (R_{th j-mb}) for PHD21N06LT,118 is 2.7 K/W. This value is measured with the device mounted to a heatsink or large copper area on the PCB and is critical for calculating junction temperature rise in high-current operation. PHD21N06LT,118 achieves this performance using its SOT428 (DPAK) package with drain-connected metal tab.

Is PHD21N06LT,118 compatible with 3.3 V microcontroller GPIO outputs?

Yes, PHD21N06LT,118 is fully compatible with 3.3 V logic-level drive due to its guaranteed gate threshold voltage (V_GS(TO)) range of 1.0–2.0 V at T_j = 25 °C and R_DS(ON) ≤ 75 mΩ at V_GS = 5 V. At 3.3 V, it delivers usable conduction (though slightly higher R_DS(ON) than at 5 V), making PHD21N06LT,118 suitable for direct MCU-controlled switching in battery-powered and low-voltage systems.

What is the reverse recovery time of the body diode in PHD21N06LT,118?

The reverse recovery time (t_rr) of the intrinsic body diode in PHD21N06LT,118 is 43 ns, measured at I_F = 20 A, -dI_F/dt = 100 A/µs, V_R = 30 V, and V_GS = 0 V. This fast recovery characteristic reduces switching losses in synchronous rectification and freewheeling applications, distinguishing PHD21N06LT,118 from standard MOSFETs with slower diodes.