NXP Semiconductors PHD23NQ10T,118

Overview

PHD23NQ10T from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT428 (DPAK) surface-mount package, rated for 100 V drain-source voltage, 23 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 70 mΩ at V_GS = 10 V. It serves as a high-efficiency switching element in d.c.-to-d.c. converters and switched-mode power supplies.

For engineers reviewing the PHD23NQ10T datasheet, PHD23NQ10T pinout, PHD23NQ10T application, or PHD23NQ10T equivalent, key selection criteria include its low thermal resistance (R_{th j-mb} = 1.5 K/W), fast switching performance (t_d(on) = 8 ns, t_f = 24 ns), avalanche ruggedness (E_AS = 93 mJ), and body diode characteristics (V_SD = 0.9–1.2 V at I_F = 11 A).

Technical Context

This device employs trench-gate MOSFET technology to achieve low on-state resistance and high current density. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling robust drive compatibility with standard logic-level controllers.

The integrated body diode supports synchronous rectification and freewheeling functions, with reverse recovery time (t_rr) of 64 ns and Q_rr of 120 nC under specified conditions. Thermal design is facilitated by direct die-to-mounting-base conduction path and low R_{th j-mb}.

Key Specifications

Pinout & Package

SOT428 (DPAK) surface-mount plastic package with exposed mounting base acting as drain terminal; compact footprint (10.4 × 6.73 mm) and low profile (1.5 mm height) suited for automated PCB assembly and thermal interface to copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP23N10F7 and IRF540NPBF, PHD23NQ10T delivers superior thermal management via R_{th j-mb} = 1.5 K/W, verified avalanche energy handling (93 mJ), and optimized gate charge for high-frequency operation-making it preferred for space-constrained, thermally demanding, or transient-resilient designs.

Availability

PHD23NQ10T is available at Aetrix Electronics and suitable for d.c.-to-d.c. converters, switched-mode power supplies, and TV/computer monitor power supplies requiring stable component supply and long-term industrial availability.

Supply support for PHD23NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.

The PHD23NQ10T belongs to NXP's legacy TrenchMOS™ power transistor family, engineered for high-efficiency, high-reliability switching in medium-power industrial and consumer power conversion systems.

FAQ

What is the maximum continuous drain current rating for PHD23NQ10T at 100 °C mounting base temperature?

The PHD23NQ10T supports 16 A continuous drain current at T_mb = 100 °C and V_GS = 10 V. This derated value reflects thermal limitations of the SOT428 package and must be used in thermal design calculations for sustained operation above ambient temperatures. The full 23 A rating applies only at T_mb = 25 °C.

Does PHD23NQ10T have a specified avalanche energy rating, and what test conditions apply?

Yes, PHD23NQ10T has a non-repetitive avalanche energy rating of 93 mJ. This value is measured under unclamped inductive load conditions: I_AS = 14 A, t_p = 100 µs, T_j prior to avalanche = 25 °C, V_DD ≤ 25 V, R_GS = 50 Ω, and V_GS = 10 V, per Figure 15 in the original Philips datasheet Rev 1.100.

Can PHD23NQ10T be used as a synchronous rectifier, and what body diode parameters support this function?

Yes, PHD23NQ10T is suitable for synchronous rectification due to its fast, low-loss body diode: V_SD = 0.9–1.2 V at I_F = 11 A and t_rr = 64 ns. These values enable efficient freewheeling in buck and flyback topologies without external diodes, especially in DCM operation where reverse recovery behavior critically impacts efficiency.

What is the gate threshold voltage range for PHD23NQ10T across its full operating temperature range?

The gate threshold voltage V_GS(TO) for PHD23NQ10T ranges from 1 V (minimum) at T_j = 175 °C to 6 V (maximum) at T_j = –55 °C, with a typical 2–4 V span at 25 °C. This wide operational window ensures reliable turn-on with standard 5 V or 10 V gate drivers across industrial temperature extremes.

Is PHD23NQ10T pin-compatible with other devices in the PHx23NQ10T family, and how do their packages differ?

No, PHD23NQ10T is not pin-compatible with PHP23NQ10T (SOT78/TO-220AB) or PHB23NQ10T (SOT404/D2PAK). While all share identical electrical specifications, PHD23NQ10T uses SOT428 (DPAK) with pin 2 as drain connected to the mounting base, whereas SOT78 exposes pin 2 externally and SOT404 omits pin 2 entirely. Layouts must be designed specifically for SOT428.