Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PHD34NQ10T,118

Name: PHD34NQ10T,118
Brand: NXP Semiconductors
SKU: PHD34NQ10T,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PHD34NQ10T,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PHD34NQ10T,118.pdf

Description:: MOSFET N-CH 100V 35A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,451

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PHD34NQ10T,118 from Nexperia is a standard-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 100 V V_DS, 35 A continuous drain current at T_mb = 25 °C, and 35 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 17 A. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and switched-mode power supplies.

For engineers reviewing the PHD34NQ10T,118 datasheet, PHD34NQ10T,118 pinout, PHD34NQ10T,118 application, or PHD34NQ10T,118 equivalent, this page provides verified thermal resistance (R_th(j-mb) = 1.1 K/W), gate charge (Q_G(tot) = 40 nC), avalanche energy (E_DS(AL)S = 170 mJ), diode forward voltage (V_SD = 0.85 V), and safe operating area (SOA) data critical for power stage design validation.

Technical Context

This device employs TrenchMOS technology to achieve low R_DS(on) and optimized dynamic characteristics: Q_GD = 18 nC and C_iss = 1704 pF enable efficient high-frequency operation up to several hundred kHz. Its unclamped inductive avalanche rating (I_AS = 35 A, E_DS(AL)S = 170 mJ) supports robustness in hard-switched topologies.

The mounting base (pin 2) is internally connected to the drain, providing low-inductance thermal and electrical path. Internal source inductance (L_S = 7.5 nH) and drain inductance (L_D = 3.5 nH) are specified to support accurate switching loss modeling in synchronous buck or half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching in 48 V input DC-DC and offline SMPS designs.
R_DS(on)	35 mΩ typ @ V_GS = 10 V, I_D = 17 A, T_j = 25 °C - Enables <1.2 W conduction loss at 20 A, reducing heatsink requirements.
Q_G(tot)	40 nC - Total gate charge supporting <500 kHz PWM operation with moderate gate driver strength (e.g., 1 A peak).
R_th(j-mb)	1.1 K/W - Junction-to-mounting-base thermal resistance enables >100 W power dissipation with 110 K temperature rise above PCB copper pad.
E_DS(AL)S	170 mJ - Non-repetitive avalanche energy rating allows reliable operation during transient overvoltage events without external snubbers.
V_GS(th)	2–4 V typ @ I_D = 1 mA - Ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drive, avoiding partial enhancement.
V_SD	0.85 V typ @ I_S = 17 A - Low body diode forward voltage reduces reverse recovery losses in synchronous rectification or freewheeling paths.

Pinout & Package

PHD34NQ10T,118 uses the SOT428 (DPAK) plastic surface-mount package with three leads (one lead cropped). The mounting base (mb) is electrically connected to the drain terminal and serves as the primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; requires ≤20 V gate-source voltage; low gate leakage (<100 nA) ensures stable bias in high-impedance drive circuits.
2	Drain (D) / Mounting Base (mb)	Main high-side power terminal and thermal path; not externally accessible-soldered directly to PCB copper pour for heat dissipation.
3	Source (S)	Power return path and reference for gate drive; internal source inductance (7.5 nH) impacts high-dI/dt switching behavior and layout sensitivity.

Key Features

Feature	Design Value
TrenchMOS technology	Delivers 35 mΩ R_DS(on) in DPAK, enabling higher power density than planar MOSFETs of comparable size.
Low R_th(j-mb)	1.1 K/W thermal resistance allows >100 W continuous operation with minimal PCB copper area, reducing board cost and footprint.
Fast switching with low Q_GD	18 nC gate-drain charge minimizes Miller plateau duration, enabling clean turn-off and reduced cross-conduction risk in synchronous topologies.
Robust avalanche capability	170 mJ unclamped avalanche energy supports reliable operation under inductive load transients without external protection components.
Optimized body diode	V_SD = 0.85 V and t_rr = 76 ns allow use in freewheeling or synchronous rectifier roles with lower recovery loss than standard discrete diodes.

Applications

Server VRM Power Stage	Industrial 48 V DC-DC Converter
Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards with 12 V input and 0.8–1.8 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck converter operating at 300–600 kHz. Use Value: 35 mΩ R_DS(on) and 40 nC Q_G enable >94% efficiency at 60 A load while maintaining thermal margin on compact 2-layer PCBs.	Use Scenario: Isolated or non-isolated step-down conversion for programmable logic controllers (PLCs) and motor drives powered from 48 V industrial bus. IC Role / Device Role / Timing Role: Main switching FET in fixed-frequency (200–500 kHz) buck regulator delivering 5–24 V outputs. Use Value: 100 V V_DS rating accommodates 48 V nominal input with 100% surge margin; 1.1 K/W R_th(j-mb) simplifies thermal design in sealed enclosures.
Telecom AC-DC Front-End	Consumer Laptop Adapter
Use Scenario: Active clamp or LLC resonant converter primary switch in telecom rectifiers handling universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or auxiliary high-side switch in PFC boost stage. Use Value: 170 mJ avalanche energy withstands line surges and transformer leakage spikes; low Q_GD improves ZVS timing margin in resonant topologies.	Use Scenario: Compact, low-noise 65 W laptop AC adapter using quasi-resonant flyback or active-clamp forward topology. IC Role / Device Role / Timing Role: Primary switch in QR flyback operating at variable frequency up to 130 kHz. Use Value: 35 mΩ R_DS(on) and 0.85 V V_SD reduce conduction and recovery losses, improving light-load efficiency and meeting CoC Tier 2 requirements.

Server VRM Power Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards with 12 V input and 0.8–1.8 V output.

IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck converter operating at 300–600 kHz.

Use Value: 35 mΩ R_DS(on) and 40 nC Q_G enable >94% efficiency at 60 A load while maintaining thermal margin on compact 2-layer PCBs.

Use Scenario: Isolated or non-isolated step-down conversion for programmable logic controllers (PLCs) and motor drives powered from 48 V industrial bus.

IC Role / Device Role / Timing Role: Main switching FET in fixed-frequency (200–500 kHz) buck regulator delivering 5–24 V outputs.

Use Value: 100 V V_DS rating accommodates 48 V nominal input with 100% surge margin; 1.1 K/W R_th(j-mb) simplifies thermal design in sealed enclosures.

Telecom AC-DC Front-End

Consumer Laptop Adapter

Use Scenario: Active clamp or LLC resonant converter primary switch in telecom rectifiers handling universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or auxiliary high-side switch in PFC boost stage.

Use Value: 170 mJ avalanche energy withstands line surges and transformer leakage spikes; low Q_GD improves ZVS timing margin in resonant topologies.

Use Scenario: Compact, low-noise 65 W laptop AC adapter using quasi-resonant flyback or active-clamp forward topology.

IC Role / Device Role / Timing Role: Primary switch in QR flyback operating at variable frequency up to 130 kHz.

Use Value: 35 mΩ R_DS(on) and 0.85 V V_SD reduce conduction and recovery losses, improving light-load efficiency and meeting CoC Tier 2 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF10	TO-220 package; higher R_DS(on) (40 mΩ); no specified avalanche energy rating.	Requires larger heatsink and cannot replace PHD34NQ10T,118 in space-constrained or avalanche-prone designs.	Choose only if through-hole assembly and lower switching frequency (<100 kHz) are acceptable.
IRF3205PBF	D2PAK package; 8.0 mΩ R_DS(on); higher Q_G (71 nC); no avalanche rating published.	Offers lower conduction loss but demands stronger gate drive and lacks documented ruggedness for inductive loads.	Select when thermal budget permits larger package and avalanche stress is absent in final circuit.

Compared with STP36NF10 and IRF3205PBF, PHD34NQ10T,118 uniquely balances DPAK footprint, 35 mΩ conduction loss, 40 nC gate charge, and certified 170 mJ avalanche energy-making it optimal for compact, high-reliability 100 V switching applications where thermal, layout, and transient robustness are co-constrained.

Availability

PHD34NQ10T,118 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, telecom AC-DC front-ends, and consumer laptop adapters requiring stable component supply across multi-year production cycles.

Supply support for PHD34NQ10T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, consumer, and wearable markets.

The PHD34NQ10T,118 belongs to Nexperia's TrenchMOS standard-level PowerMOS family, engineered for high-efficiency, high-reliability switching in computing and industrial power conversion where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for PHD34NQ10T,118?

The PHD34NQ10T,118 is rated for 35 A continuous drain current at mounting base temperature (T_mb) = 25 °C and V_GS = 10 V. At T_mb = 100 °C, the rating reduces to 25 A per the limiting values table. Derating must follow the normalized ID vs. T_mb curve in Figure 2 to ensure safe operation under real thermal conditions.

Does PHD34NQ10T,118 support logic-level gate drive?

Yes, PHD34NQ10T,118 has a gate-source threshold voltage (V_GS(th)) of 2–4 V typical at I_D = 1 mA, enabling reliable turn-on with standard 3.3 V or 5 V logic-level drivers. However, full enhancement to 35 mΩ R_DS(on) requires V_GS ≥ 10 V, so gate drive must deliver sufficient voltage and current to overcome Q_G = 40 nC.

What is the thermal resistance from junction to mounting base for PHD34NQ10T,118?

The PHD34NQ10T,118 has a maximum thermal resistance of R_th(j-mb) = 1.1 K/W from junction to mounting base. This value is measured under standardized test conditions and assumes proper soldering of the mounting base to a minimum footprint copper area on the PCB, enabling effective heat transfer away from the die.

Is PHD34NQ10T,118 qualified for automotive applications?

No, PHD34NQ10T,118 is not automotive-qualified. Per Nexperia's legal disclaimers, it is designed and qualified only for computing, communications, consumer, and industrial applications. It has not undergone AEC-Q101 stress testing or automotive-grade reliability qualification, and its use in safety-critical automotive systems is not supported.

What is the gate-drain charge (Q_GD) specification for PHD34NQ10T,118?

The PHD34NQ10T,118 specifies Q_GD = 18 nC typical under conditions of V_GS = 10 V, I_D = 34 A, V_DS = 80 V, and T_j = 25 °C. This parameter directly influences Miller plateau duration and switching speed, making it essential for optimizing gate driver selection and minimizing turn-off losses in high-frequency designs.

PHD34NQ10T,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1704 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PHD34NQ10T,118 FAQ

1.How can I place an order for PHD34NQ10T,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHD34NQ10T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHD34NQ10T,118 reliable?

The price and inventory of PHD34NQ10T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD34NQ10T,118 is usually 5 days.

3.What payment methods are accepted for PHD34NQ10T,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD34NQ10T,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHD34NQ10T,118?

PHD34NQ10T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHD34NQ10T,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHD34NQ10T,118?

For technical support, including PHD34NQ10T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD34NQ10T,118 requirements.

6.How does Aetrix verify that PHD34NQ10T,118 is sourced from the original manufacturer or authorized distributors?

All PHD34NQ10T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD34NQ10T,118 meets industry standards.

7.What is the process for return or replacement of PHD34NQ10T,118?

All PHD34NQ10T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD34NQ10T,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHD34NQ10T,118 part is unused and in its original packaging.

Return procedure for PHD34NQ10T,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…